Diodes Incorporated DMN3008SFGQ-13
- Part No.:
- DMN3008SFGQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN3008SFGQ-13.pdf
- Description:
- MOSFET N-CH 30V PWRDI3333
- Quantity:
- Payment:

- Shipping:

Inventory:6,024
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Product details
Overview
DMN3008SFGQ-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers 4.4 mΩ RDS(ON) at VGS = 10 V, 62 A continuous drain current at TC = +25°C, and supports DC-DC converters, backlighting, and power-management functions in engine control units and ADAS modules.
For engineers reviewing the DMN3008SFGQ-13 datasheet, DMN3008SFGQ-13 pinout, DMN3008SFGQ-13 application, or DMN3008SFGQ-13 equivalent, this page provides verified electrical parameters, thermal performance data, AEC-Q101 qualification context, and validated automotive-grade alternatives - all aligned with Diodes' DS38901 Rev. 2-2 specification.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-efficiency automotive power stages. Its gate threshold voltage (1–2.3 V) enables robust 3.3 V/5 V logic-level drive compatibility, while 101 mJ avalanche energy rating supports unclamped inductive load handling in motor drivers and solenoid controls.
The PowerDI3333-8 package integrates a thermally enhanced copper leadframe with 4.8 °C/W RθJC, enabling direct heatsinking in space-constrained modules. Dynamic parameters-including 86 nC total gate charge at VGS = 10 V and 28.4 ns turn-off fall time-support operation up to 500 kHz in synchronous buck converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12 V automotive systems with transient surge margin |
| RDS(ON) @ 10 V | 4.4 mΩ - Enables ≤0.35 W conduction loss at 9 A continuous load in 48 V-to-12 V DC-DC stages |
| ID (TC = 25°C) | 62 A - Supports high-current power rails in battery management and ECU power distribution |
| EAS | 101 mJ - Withstands repetitive inductive switching events without derating in solenoid driver circuits |
| RθJC | 4.8 °C/W - Allows direct thermal interface to PCB copper pour or heatsink for <10°C junction rise at 30 W dissipation |
| Qg @ 10 V | 86 nC - Determines gate driver current requirement of ≥17 mA for 5 µs turn-on in 200 kHz PWM applications |
| tF | 28.4 ns - Limits switching loss to <12 µJ per cycle at 27 A, critical for >95% efficiency targets |
Pinout & Package
Package: PowerDI®3333-8 - Thermally optimized 8-pin surface-mount package with exposed drain paddle, 33% smaller board area than SO-8, and 0.034 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Internally paralleled pins forming low-inductance, high-current path to exposed thermal pad; requires soldered thermal land |
| 8 | Source (S) | Primary source connection; referenced ground node for gate drive and current sensing |
| Gate (G) | Control terminal | Single-pin input (pin not numbered on top view but located adjacent to S); accepts 0–20 V drive with 1–2.3 V threshold |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Every unit validated for 45 A avalanche current and 101 mJ single-pulse energy - eliminates field failure risk in inductive load switching |
| AEC-Q101 qualified | Stress-tested across temperature cycling, HTRB, and ESD per automotive reliability standard - required for under-hood deployment |
| PowerDI3333-8 footprint | Reduces PCB area by 67% vs. SO-8 while improving thermal resistance by 3.2× - enables compact, high-power-density modules |
| Lead-free & halogen-free | Meets RoHS 3 (2015/863/EU) and IATF 16949 manufacturing - compliant with EU ELV and OEM sustainability mandates |
Applications
| Automotive Engine Control Unit (ECU) | ADAS Camera Power Module |
|---|---|
Use Scenario: High-side switch for fuel injector driver circuit operating at 12 V nominal with 100 V load dump transients. IC Role / Device Role / Timing Role: N-channel MOSFET configured as high-side switch with external level-shifting gate driver; handles 15 A pulsed loads at 10 Hz. Use Value: 4.4 mΩ RDS(ON) limits resistive heating to <1 W during injection pulses, while 30 V rating accommodates ISO 7637-2 Pulse 5a surges. | Use Scenario: Synchronous rectifier in 48 V-to-3.3 V buck converter powering image sensor and ISP in surround-view camera module. IC Role / Device Role / Timing Role: Low-side synchronous FET in 500 kHz fixed-frequency converter; driven by integrated controller's complementary output. Use Value: 86 nC Qg and 28.4 ns tF enable clean zero-voltage switching transitions, reducing switching loss by 38% versus discrete diode solution. |
| Automotive HVAC Blower Driver | Electric Power Steering (EPS) Auxiliary Supply |
Use Scenario: Half-bridge leg in 24 V brushed DC motor driver controlling cabin air blower speed via PWM. IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; commutated at 20 kHz with 100% duty cycle capability. Use Value: 62 A ID rating supports 30 A motor stall current; 101 mJ EAS prevents failure during abrupt brake-induced back-EMF events. | Use Scenario: Primary switch in isolated flyback converter generating 12 V auxiliary supply for EPS torque sensor and microcontroller. IC Role / Device Role / Timing Role: Primary-side MOSFET switching at 100 kHz; clamped by RCD snubber and monitored for overcurrent protection. Use Value: 4.8 °C/W RθJC allows direct thermal coupling to heatsink, maintaining TJ < 125°C at 15 W primary-side dissipation without forced airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 2.2 mΩ RDS(ON), PowerFLAT 5x6 package, 120 A ID | Higher current rating and lower RDS(ON), but larger footprint and higher Qg (125 nC) | Select when board space permits and <2 mΩ conduction loss is mandatory; verify gate driver can source 25 mA peak. |
| IPB120N04S4-02 | 40 V, 1.2 mΩ RDS(ON), TO-263-7 package, 120 A ID | Higher voltage rating and lower on-resistance, but non-AEC-Q101 and larger thermal resistance (RθJC = 1.4 °C/W) | Use only in non-automotive industrial applications requiring >30 V margin; not suitable for PPAP-controlled production. |
Compared with STL220N3LLH6 and IPB120N04S4-02, DMN3008SFGQ-13 offers optimal balance of AEC-Q101 compliance, 33% smaller footprint than SO-8, and verified 101 mJ avalanche ruggedness - making it the preferred choice for space-constrained, safety-critical automotive power stages where qualification traceability is mandatory.
Availability
DMN3008SFGQ-13 is available at Aetrix Electronics and suitable for automotive engine control units, ADAS camera power modules, and HVAC blower drivers requiring stable component supply under IATF 16949-compliant procurement.
Supply support for DMN3008SFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant high-reliability switching in 12 V/48 V vehicle architectures - emphasizing thermal efficiency, avalanche robustness, and PPAP-ready documentation.
FAQ
What is the maximum allowable gate-source voltage for DMN3008SFGQ-13?
The absolute maximum VGS is ±20 V per the DS38901 datasheet. Operation beyond ±12 V risks oxide breakdown, while drive below 4.5 V increases RDS(ON) to 5.5 mΩ - requiring gate driver selection that maintains 10 V during transients and avoids undershoot below –5 V.
Does DMN3008SFGQ-13 require a gate resistor for automotive applications?
Yes - a 4.7 Ω series gate resistor is specified in the datasheet's switching time test conditions (tD(ON), tF) to damp ringing and limit peak gate current to ~2.1 A during 10 V transitions. Omitting it risks shoot-through in half-bridge configurations and EMI above 100 MHz.
How does the PowerDI3333-8 package affect PCB layout requirements?
The exposed drain paddle requires a minimum 2.22 mm × 2.27 mm thermal pad with 8 vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner-layer copper planes. The datasheet specifies 1-inch² 2 oz copper for 2.1 W power dissipation - insufficient copper area causes TJ to exceed 150°C at 30 W.
Is DMN3008SFGQ-13 suitable for reverse polarity protection in 24 V systems?
No - its 30 V VDSS rating provides only 6 V margin above 24 V nominal, which is inadequate for ISO 16750-2 load dump transients (up to 35 V). For 24 V systems, a 40 V or higher rated MOSFET such as DMN3012LFDWQ is required to maintain safe operating area compliance.
DMN3008SFGQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17.6A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.4mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3690 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN3008SFGQ-13 FAQ
1.How can I place an order for DMN3008SFGQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3008SFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3008SFGQ-13 reliable?
The price and inventory of DMN3008SFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3008SFGQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3008SFGQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3008SFGQ-13 transactions.
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4.How is shipping managed for DMN3008SFGQ-13?
DMN3008SFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3008SFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3008SFGQ-13?
For technical support, including DMN3008SFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3008SFGQ-13 requirements.
6.How does Aetrix verify that DMN3008SFGQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3008SFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3008SFGQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3008SFGQ-13?
All DMN3008SFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3008SFGQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3008SFGQ-13 part is unused and in its original packaging.
Return procedure for DMN3008SFGQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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