Diodes Incorporated DMN3009LFV-13

Overview

DMN3009LFV-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, optimized for high-efficiency power management with 5.5 mΩ R_DS(ON) @ V_GS = 10 V, 60 A continuous drain current at T_C = +25°C, and fast switching (t_F = 15 ns). It serves as a primary synchronous rectifier or high-side switch in compact DC-DC converters.

For engineers reviewing the DMN3009LFV-13 datasheet, DMN3009LFV-13 pinout, DMN3009LFV-13 application, or DMN3009LFV-13 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, thermal resistance of 3.5°C/W junction-to-case, SOA compliance up to 10 ms pulses, and compatibility with space-constrained PCB layouts requiring <33% board area vs. SO-8.

Technical Context

This MOSFET employs planar silicon process technology to achieve balanced conduction and switching losses. Its gate threshold voltage (1–3 V) enables direct interfacing with 3.3 V and 5 V logic controllers, while its low Crss (247 pF) and Qgd (7.4 nC) support high-frequency operation up to 1 MHz in buck converters.

The device integrates an intrinsic body diode with t_RR = 15 ns and Q_RR = 6.0 nC, suitable for synchronous rectification where reverse recovery loss must be minimized. Thermal design leverages the exposed drain pad in the PowerDI3333-8 package to deliver R_θJC = 3.5°C/W under standard mounting conditions.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), footprint occupies 33% of SO-8 area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3029LFG-7 and SiR872DP-T1-GE3, DMN3009LFV-13 delivers the lowest R_DS(ON) at 10 V among PowerDI3333-8 devices, offers best-in-class t_F/Q_gd ratio for high-frequency switching, and maintains full pin compatibility with existing Diodes PowerDI3333-8 designs without layout changes.

Availability

DMN3009LFV-13 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC converters, and USB-C power delivery systems requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for DMN3009LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN3009LFV belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-efficiency power conversion in space-constrained consumer, computing, and industrial applications where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DMN3009LFV-13 has a rated operating junction temperature range of –55°C to +150°C. For continuous operation, the absolute maximum TJ is +150°C. Derating is required above +25°C ambient based on R_θJA = 62°C/W (2 oz copper board) or R_θJA = 126°C/W (1 oz FR-4), per Notes 5 and 6 in the datasheet.

Can this MOSFET be used with 3.3 V gate drive in saturation?

Yes - at V_GS = 4.5 V, R_DS(ON) is guaranteed ≤9.0 mΩ, and typical value is 4.6 mΩ. At 3.3 V, the device remains partially enhanced (V_GS(TH) min = 1 V), but R_DS(ON) rises significantly; it is not recommended for high-current saturation below 4.5 V without verifying actual on-resistance in system-level thermal testing.

Is the exposed drain pad electrically connected to all drain pins?

Yes - pins 1 through 7 and the bottom-exposed drain pad are monolithically connected to the same internal drain node. The datasheet's top-view diagram and mechanical outline confirm this single-point drain structure, requiring all seven pins and the pad to be soldered to a common copper pour for optimal thermal and electrical performance.

Does this part support avalanche energy rating in repetitive operation?

No - the EAS = 58 mJ and IAS = 33 A ratings are specified for single-pulse conditions only (Note 8). The datasheet does not guarantee repetitive avalanche capability. System designs requiring repetitive inductive switching must implement external clamping or ensure operation stays within the SOA curve (Figure 12) with appropriate snubbing and layout controls.