Diodes Incorporated DMN3009LFV-7

Overview

DMN3009LFV-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, optimized for high-efficiency power management with R_DS(ON) = 5.5 mΩ @ V_GS = 10V, 60 A continuous drain current at T_C = +25°C, and fast switching (t_F = 15 ns). It serves as a primary synchronous rectifier or high-side switch in DC-DC converters for notebook adapters and USB-PD power supplies.

For engineers reviewing the DMN3009LFV-7 datasheet, DMN3009LFV-7 pinout, DMN3009LFV-7 application, or DMN3009LFV-7 equivalent, key selection criteria include low R_DS(ON) at 4.5 V gate drive, thermal resistance R_θJC = 3.5 °C/W, SOA compliance up to 10 ms pulses, and compatibility with compact PowerDI3333-8 PCB layouts.

Technical Context

This MOSFET uses trench-gate silicon process to achieve sub-6 mΩ on-resistance while maintaining 30 V V_DSS, enabling high-current operation in space-constrained 5–20 W DC-DC stages. Its gate charge profile (Q_g = 42 nC @ 10 V) supports efficient PWM control at 500 kHz–1 MHz frequencies without excessive driver loss.

The device integrates a robust body diode with t_RR = 15 ns and Q_RR = 6.0 nC, suitable for synchronous buck topologies where reverse recovery behavior directly impacts efficiency and EMI. Thermal design leverages the exposed drain pad for direct heatsinking via PCB copper pour.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L×W×H), footprint occupies 33% of SO-8 area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3009LFV-7, DMN3025LFD-7 trades conduction loss for gate drive simplicity, while SiR872DP-T1-GE3 delivers lower R_DS(ON) but demands revised thermal and compliance validation - making DMN3009LFV-7 optimal for balanced efficiency, size, and global compliance in mid-power adapters.

Availability

DMN3009LFV-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, LED backlight drivers, and industrial 24 V DC-DC supplies requiring stable component supply, consistent parametric performance, and long-term lifecycle assurance.

Supply support for DMN3009LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing and test facilities across Asia and design centers in the US, UK, and Taiwan.

This MOSFET belongs to Diodes' Power Management Discrete product line, engineered specifically for high-efficiency, high-density power conversion in consumer, computing, and industrial applications where thermal and space constraints dominate design trade-offs.

FAQ

What is the maximum safe operating temperature for DMN3009LFV-7 in continuous operation?

The device has a maximum junction temperature (T_J) of +150°C and operates continuously within -55°C to +150°C storage range. For sustained 60 A current, thermal design must limit T_J to ≤150°C using the specified R_θJC = 3.5 °C/W and adequate PCB copper area - typical board-level R_θJA is 62 °C/W with 2 oz copper thermal bias.

Can DMN3009LFV-7 be used as a replacement for SO-8 MOSFETs in existing designs?

No direct drop-in replacement is possible due to differing pinout and thermal structure: PowerDI3333-8 has 7 drain pins and 1 gate pin versus SO-8's 8-pin dual-row layout. Layout redesign is required to accommodate the exposed drain pad and smaller footprint, though the electrical specs allow functional equivalence in most 30 V power stages.

Does DMN3009LFV-7 support logic-level gate drive at 3.3 V?

Yes - its V_GS(TH) range is 1–3 V, and it delivers R_DS(ON) = 9.0 mΩ at V_GS = 4.5 V. At 3.3 V, it conducts ~12 A with R_DS(ON) ≈ 15 mΩ (per Figure 3), making it usable with 3.3 V microcontrollers in moderate-current applications (<15 A) with appropriate thermal margin.

How does the body diode performance impact synchronous rectification in buck converters?

The body diode has t_RR = 15 ns and Q_RR = 6.0 nC, enabling clean commutation during dead-time intervals. This minimizes voltage spikes and conduction loss during freewheeling, especially critical in 500 kHz+ buck converters where slow recovery would increase EMI and reduce efficiency by >2% at full load.