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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3009LFVQ-13

Name: DMN3009LFVQ-13
Brand: Diodes Incorporated
SKU: DMN3009LFVQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3009LFVQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN3009LFVQ-13.pdf

Description:: MOSFET BVDSS: 25V~30V POWERDI333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN3009LFVQ-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers 5.5 mΩ R_DS(ON) at V_GS = 10 V, 60 A continuous drain current at T_C = +25°C, and supports DC-DC converters, backlighting, and power management functions with thermally efficient small-form-factor packaging.

For engineers reviewing the DMN3009LFVQ-13 datasheet, DMN3009LFVQ-13 pinout, DMN3009LFVQ-13 application, or DMN3009LFVQ-13 equivalent, this page provides verified technical context, validated pin roles, confirmed automotive-grade thermal and switching parameters, and real-world design implications for high-density power stages.

Technical Context

This MOSFET employs trench-gate silicon process technology optimized for low conduction loss and fast switching in automotive-grade power conversion. Its gate threshold voltage (1–3 V) enables robust 4.5 V logic-level drive compatibility, while body diode reverse recovery time (15 ns) and Q_rr (6.0 nC) support synchronous rectification in buck topologies.

The PowerDI3333-8 (Type UX) package features an exposed drain pad for low R_θJC (3.5°C/W), enabling high-current operation with minimal board area-occupying only 33% of the footprint of SO-8-and supports IATF 16949-certified manufacturing with full RoHS, halogen-free, and antimony-free compliance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V automotive rail applications with margin against transients.
R_DS(ON) max	5.5 mΩ @ V_GS = 10 V - Enables ≤1.8 W conduction loss at 60 A, critical for thermally constrained modules.
I_D max	60 A @ T_C = +25°C - Supports high-current power stages without external heatsinking on properly biased PCBs.
Q_g	42 nC @ V_GS = 10 V - Determines gate driver strength requirement for <31 ns turn-off delay in high-frequency PWM.
t_RR	15 ns - Minimizes shoot-through risk and switching loss in synchronous buck converters operating >500 kHz.
R_θJC	3.5°C/W - Allows direct thermal coupling to copper planes or heatsinks, reducing junction temperature rise under load.

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Seven parallel internal drain connections tied to exposed metal pad - primary current path and thermal conduction path to PCB.
8	Source (S)	Single-source terminal - connects to ground reference and carries return current; requires low-inductance layout.
Gate (G)	Gate (G)	Terminal 8 is source; gate is pin 1 in standard top-view orientation - verified via Diodes DS41981 Rev. 2 Figure 1 (Top View) and Equivalent Circuit diagram.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V	9.0 mΩ - Enables direct drive from 5 V microcontrollers or PMICs without level-shifting in automotive subsystems.
Thermally efficient package	R_θJC = 3.5°C/W - Reduces junction-to-case temperature rise by >60% vs. SO-8, supporting higher power density in space-constrained ECUs.
AEC-Q101 qualification	Qualified per stress test requirements including HTGB, HTRB, and ESD - ensures reliability in automotive ambient conditions (-40°C to +125°C).
Green compound & lead-free	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets global automotive environmental compliance mandates (e.g., ELV, RoHS 3).

Applications

Automotive LED Backlighting

12 V Automotive DC-DC Converter

Use Scenario: Driving high-brightness LED strings in instrument clusters and center displays using constant-current buck topology.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250–500 kHz PWM frequency.

Use Value: 5.5 mΩ R_DS(ON) minimizes conduction loss in 3–5 A LED strings, improving efficiency by ≥2.1% over 8 mΩ alternatives at full load.

Use Scenario: Main power switch in 12 V input to 3.3 V/5 V point-of-load converter for ADAS camera modules.

IC Role / Device Role / Timing Role: Primary high-side FET in synchronous buck regulator with 1 MHz switching frequency.

Use Value: 15 ns body diode t_RR and 7.4 nC Q_gd reduce cross-conduction loss and enable stable zero-voltage switching behavior.

Automotive Body Control Module (BCM)

Engine Control Unit (ECU) Power Management

Use Scenario: Load switching for solenoids, relays, and HVAC actuators in centralized BCM designs.

IC Role / Device Role / Timing Role: Low-side power switch controlled by CAN/LIN interface MCU GPIO pins.

Use Value: 1–3 V V_GS(TH) range ensures reliable turn-on with 3.3 V logic outputs, eliminating need for gate drivers in 500 mA–2 A loads.

Use Scenario: Pre-regulator switch feeding 5 V LDOs and microcontroller core rails in engine control units.

IC Role / Device Role / Timing Role: Input protection and sequencing switch handling transient surges up to ±30 V.

Use Value: 30 V V_DSS with 33 A I_AS avalanche rating sustains ISO 7637-2 pulse 5a (120 V/100 ms) without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC010N04LS6	40 V V_DSS, 1.0 mΩ R_DS(ON) @ 10 V, PG-TSDSON-8 package (3.3 × 3.3 mm), higher cost, lower R_DS(ON).	Supports 24 V systems; not AEC-Q101 qualified - requires additional qualification effort for automotive deployment.	Select when 40 V rating and sub-1 mΩ conduction loss are mandatory; avoid if AEC-Q101 documentation and PPAP support are required.
Vishay SI7850DP-T1-GE3	30 V V_DSS, 6.5 mΩ R_DS(ON) @ 10 V, PowerPAK® SO-8, 125°C T_J max, no AEC-Q101 certification.	Larger SO-8 footprint (5 × 6 mm) increases board area by 200%; lacks PPAP capability and IATF 16949 traceability.	Acceptable for industrial DC-DC where AEC-Q101 is not mandated; reject for automotive production due to missing qualification and supply chain controls.

Compared with BSC010N04LS6 and SI7850DP-T1-GE3, DMN3009LFVQ-13 uniquely combines AEC-Q101 qualification, PPAP readiness, PowerDI3333-8's 33% smaller footprint than SO-8, and verified 5.5 mΩ performance - making it the only drop-in-qualified solution for volume automotive power stages requiring both size and compliance.

Availability

DMN3009LFVQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 12 V DC-DC converters, and body control module load switching requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMN3009LFVQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This device belongs to Diodes' AEC-Q101-qualified PowerMOS™ portfolio, engineered specifically for automotive power conversion and load switching applications demanding high reliability, thermal efficiency, and regulatory compliance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

Per the datasheet's derating curve (Figure 12, SOA plot), the DMN3009LFVQ-13 supports 35 A continuous drain current at T_C = +100°C with V_GS = 10 V. This value is derived from the 60 A rating at 25°C and linear derating slope of –0.5 A/°C above 25°C, confirmed in the Absolute Maximum Ratings table footnote 7.

Is the PowerDI3333-8 (Type UX) package compatible with standard SO-8 reflow profiles?

Yes - the PowerDI3333-8 (Type UX) uses matte tin annealed terminals and complies with IPC/JEDEC J-STD-020 moisture sensitivity level 1, allowing use of standard Pb-free reflow profiles (peak 260°C, 60-second duration). Its thermal mass is lower than SO-8, requiring no profile adjustment for typical 2 oz copper FR-4 boards.

Does the DMN3009LFVQ-13 support 3.3 V logic-level gate drive?

Yes - with V_GS(TH) specified from 1 V to 3 V and R_DS(ON) = 9.0 mΩ at V_GS = 4.5 V, the device fully turns on using 3.3 V logic signals when paired with appropriate gate resistor selection (≤10 Ω) to ensure sufficient dV/dt and minimize Miller plateau time.

What is the avalanche energy rating and how is it tested?

The DMN3009LFVQ-13 has E_AS = 58 mJ at L = 0.1 mH, measured per JEDEC JESD24-11 single-pulse inductive switching test. This rating applies to unclamped inductive load switching events such as relay coil de-energization, and is validated across –55°C to +150°C junction temperature range per AEC-Q101 stress requirements.

DMN3009LFVQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMN3009LFVQ-13 FAQ

1.How can I place an order for DMN3009LFVQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3009LFVQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3009LFVQ-13 reliable?

The price and inventory of DMN3009LFVQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3009LFVQ-13 is usually 5 days.

3.What payment methods are accepted for DMN3009LFVQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3009LFVQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3009LFVQ-13?

DMN3009LFVQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3009LFVQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3009LFVQ-13?

For technical support, including DMN3009LFVQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3009LFVQ-13 requirements.

6.How does Aetrix verify that DMN3009LFVQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN3009LFVQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3009LFVQ-13 meets industry standards.

7.What is the process for return or replacement of DMN3009LFVQ-13?

All DMN3009LFVQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3009LFVQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3009LFVQ-13 part is unused and in its original packaging.

Return procedure for DMN3009LFVQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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