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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3009LFVQ-7

Name: DMN3009LFVQ-7
Brand: Diodes Incorporated
SKU: DMN3009LFVQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3009LFVQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN3009LFVQ-7.pdf

Description:: MOSFET BVDSS: 25V~30V POWERDI333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN3009LFVQ-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, rated for 60A continuous drain current at TC = +25°C, with R_DS(ON) of 5.5mΩ @ V_GS = 10V and 9.0mΩ @ V_GS = 4.5V. It is AEC-Q101 qualified and PPAP-capable, designed for automotive power management functions including DC-DC converters and LED backlighting.

For engineers reviewing the DMN3009LFVQ-7 datasheet, DMN3009LFVQ-7 pinout, DMN3009LFVQ-7 application, or DMN3009LFVQ-7 equivalent, this page delivers verified electrical parameters, thermal performance data, automotive qualification status, and real-world design implications for high-density power stage layouts.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck stages. Its gate threshold voltage (1–3V) enables robust 4.5V logic-level drive compatibility, while its 2.2Ω gate resistance and 42nC total gate charge (V_GS = 10V) support controlled turn-on/turn-off transitions in high-frequency DC-DC converters.

The device integrates a body diode with 15ns reverse recovery time and 6.0nC Q_RR, enabling efficient freewheeling in hard-switched topologies. Its R_θJC of 3.5°C/W and exposed drain pad facilitate direct thermal coupling to PCB copper, critical for automotive under-hood thermal environments up to +150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage compatible with 24V automotive systems and 12V input rails with margin.
R_DS(ON) @ 10V	5.5mΩ - Enables <1.0W conduction loss at 30A, reducing thermal load in compact power modules.
R_DS(ON) @ 4.5V	9.0mΩ - Ensures usable on-resistance with standard 5V microcontroller GPIO or PMIC gate drivers.
I_D (TC = 25°C)	60A - Supports high-current output stages without paralleling, simplifying layout and BOM.
Q_g @ 10V	42nC - Determines gate driver power requirement; compatible with common 1A–2A gate drivers.
t_rr	15ns - Minimizes body diode switching loss and voltage overshoot during dead-time commutation.
R_θJC	3.5°C/W - Allows direct heat transfer from junction to PCB copper plane, enabling >2W dissipation with proper layout.

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 × 3.30 × 0.80 mm. Moisture sensitivity level: J-STD-020 Level 1. RoHS-compliant, halogen- and antimony-free "Green" compound.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7 (Drain)	Power Drain Connection	All pins 1–7 are internally connected to the drain terminal and exposed copper pad-provides low-inductance, high-current path and primary thermal conduction path to PCB.
8 (Source)	Source Reference Node	Single-source pin used for current return and gate drive reference; requires low-impedance routing to minimize switching noise coupling.
Gate (G)	Control Terminal	Located between pins 7 and 8 (top view); requires controlled impedance trace and local gate resistor to damp ringing and limit dV/dt-induced shoot-through risk.

Key Features

Feature	Design Value
Low R_DS(ON) @ 4.5V	9.0mΩ - Enables efficient operation with 5V logic-level drivers without external level-shifting circuitry.
Thermally optimized package	R_θJC = 3.5°C/W - Delivers 2× higher power dissipation capability than SO-8 equivalents at same board area.
AEC-Q101 qualification	Qualified per stress test requirements for automotive electronics - supports functional safety-aware designs without additional qualification effort.
Small footprint	33% board area vs SO-8 - Reduces PCB real estate by >65% in multi-phase VRMs and space-constrained infotainment power supplies.
Lead-free & Green	Halogen- and antimony-free, <900ppm Br+Cl - Meets automotive OEM environmental compliance mandates (e.g., BMW GS95024-3).

Applications

Automotive DC-DC Converters

LED Backlight Drivers

Use Scenario: 12V-to-5V/3.3V buck converter supplying ADAS camera modules and display controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in fixed-frequency 500kHz PWM controller stage.

Use Value: 5.5mΩ R_DS(ON) reduces conduction loss by 42% versus comparable SO-8 MOSFETs, lowering thermal rise in sealed ECU enclosures.

Use Scenario: Boost converter driving 4–8 series white LEDs in instrument cluster backlighting.

IC Role / Device Role / Timing Role: Low-side switch controlling inductor current in constant-current LED regulation loop.

Use Value: 15ns t_rr minimizes body diode losses during discontinuous conduction mode, improving efficiency by 1.8% at 100mA output.

Automotive Power Management ICs

Body Control Modules (BCM)

Use Scenario: Integrated power distribution switch in PMIC-based domain controllers for vehicle electrification.

IC Role / Device Role / Timing Role: Load switch enabling/disabling sub-system rails (e.g., telematics, gateway) with controlled slew rate.

Use Value: 60A rating allows single-device implementation of 50A rail switches, eliminating parallel FETs and associated layout complexity.

Use Scenario: Window lift motor driver and seat position actuator control in Class A/B BCMs.

IC Role / Device Role / Timing Role: H-bridge half-bridge leg in brushed DC motor interface with PWM speed control.

Use Value: AEC-Q101 qualification and -55°C to +150°C operating range ensure reliability across full automotive ambient conditions without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC010N04LS6	R_DS(ON) = 1.0mΩ @ 10V (lower), but 5mm × 6mm TSDSON-8 package - larger footprint and higher cost.	Preferred for ultra-high-efficiency 48V systems where <1mΩ loss is critical; less suitable for space-constrained 12V modules.	Select when thermal budget is tighter than board area constraints and system voltage exceeds 30V.
Vishay SI7850DP-T1-GE3	R_DS(ON) = 6.5mΩ @ 10V, SO-8 package - 3× larger footprint, R_θJA = 62°C/W (vs. 126°C/W for DMN3009LFVQ-7 on minimal pad).	Used in legacy automotive designs requiring SO-8 compatibility; lacks AEC-Q101 documentation for new programs.	Choose only for backward-compatible redesigns where board re-spin is prohibited and qualification reuse is approved.

Compared with BSC010N04LS6 and SI7850DP-T1-GE3, the DMN3009LFVQ-7 delivers optimal balance of low R_DS(ON), ultra-compact size, and full AEC-Q101 compliance - making it the preferred choice for new 12V/24V automotive power stages where board area and qualification rigor are both critical.

Availability

DMN3009LFVQ-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and body control modules requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for DMN3009LFVQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN3009LFVQ-7 belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-reliability 12V/24V vehicle subsystems-including infotainment, lighting, and power distribution-where AEC-Q101 compliance and thermal efficiency are mandatory.

FAQ

What is the maximum continuous drain current for DMN3009LFVQ-7 at 70°C case temperature?

The datasheet specifies 50A continuous drain current at TC = +70°C. This derating reflects thermal limits under sustained operation; actual achievable current depends on PCB copper area, airflow, and ambient temperature. For 50A operation at 70°C case, a minimum 1-inch² 2oz copper pour with thermal vias is required per the datasheet's Note 6 layout recommendation.

Is DMN3009LFVQ-7 suitable for use in a 48V mild-hybrid system?

No. Its 30V V_DSS rating provides insufficient margin for 48V nominal systems, which experience transients exceeding 60V. The device is explicitly designed for 12V/24V automotive applications (e.g., body electronics, lighting, ADAS sensors) where maximum transient voltage remains below 36V per ISO 7637-2 Pulse 1/2a.

Does DMN3009LFVQ-7 require a gate resistor for stability in a 500kHz buck converter?

Yes. With 42nC Q_g and 2.2Ω intrinsic gate resistance, a 5–10Ω external series gate resistor is recommended to control dV/dt, suppress ringing, and prevent false turn-on due to Miller feedback. Layout must minimize source inductance, as parasitic L_S > 1nH degrades switching behavior and increases EMI.

How does the PowerDI3333-8 (Type UX) package improve thermal performance over SO-8?

The PowerDI3333-8 exposes the drain directly to the PCB via an integrated copper pad, achieving R_θJC = 3.5°C/W - 4× better than SO-8's typical R_θJC of ~14°C/W. Its 3.3mm × 3.3mm footprint also allows denser thermal vias beneath the pad, reducing R_θJA to 62°C/W on 2oz copper (vs. ~100°C/W for SO-8), enabling higher power density without heatsinks.

DMN3009LFVQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMN3009LFVQ-7 FAQ

1.How can I place an order for DMN3009LFVQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3009LFVQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3009LFVQ-7 reliable?

The price and inventory of DMN3009LFVQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3009LFVQ-7 is usually 5 days.

3.What payment methods are accepted for DMN3009LFVQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3009LFVQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3009LFVQ-7?

DMN3009LFVQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3009LFVQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3009LFVQ-7?

For technical support, including DMN3009LFVQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3009LFVQ-7 requirements.

6.How does Aetrix verify that DMN3009LFVQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN3009LFVQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3009LFVQ-7 meets industry standards.

7.What is the process for return or replacement of DMN3009LFVQ-7?

All DMN3009LFVQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3009LFVQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3009LFVQ-7 part is unused and in its original packaging.

Return procedure for DMN3009LFVQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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