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Diodes Incorporated DMN3009SFG-13
- Part No.:
- DMN3009SFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN3009SFG-13.pdf
- Description:
- MOSFET N-CH 30V 16A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:9,175
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Product details
Overview
DMN3009SFG-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, optimized for high-efficiency power management with RDS(ON) = 5.5 mΩ @ VGS = 10V, 45A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness. It serves as a primary switching element in synchronous buck converters and battery protection circuits.
For engineers reviewing the DMN3009SFG-13 datasheet, DMN3009SFG-13 pinout, DMN3009SFG-13 application, or DMN3009SFG-13 equivalent, key selection criteria include low RDS(ON) at 4.5V gate drive, thermal resistance (RθJC = 7.8°C/W), and avalanche energy rating (EAS = 55 mJ) for reliable operation in DC-DC converter high-side and low-side positions.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining fast switching performance: tD(ON) = 3.9 ns, tF = 14.6 ns, and Qg = 42 nC at VGS = 10V. Its gate threshold voltage (VGS(TH) = 1–2.5 V) ensures stable turn-on under typical 3.3V/5V logic control.
The device integrates a body diode with VSD = 0.7–1.0 V at IS = 1 A and tRR = 15 ns, supporting synchronous rectification and reverse recovery in hard-switched topologies. Thermal design is enabled by RθJC = 7.8°C/W and RθJA = 59°C/W (with 1-inch² copper pad).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12V/24V input rail applications |
| RDS(ON) | 5.5 mΩ @ VGS = 10V - Enables <1W conduction loss at 20A in high-current DC-DC stages |
| ID (TC = 25°C) | 45 A - Supports high-power POL converters without external heatsinking |
| EAS | 55 mJ - Confirmed avalanche ruggedness for inductive load switching in motor drivers |
| Qg | 42 nC @ VGS = 10V - Determines gate driver current requirement (~1.4 A peak for 30 ns rise time) |
| RθJC | 7.8°C/W - Enables direct thermal coupling to PCB copper or heatsink for >3W dissipation |
| tRR | 15 ns - Minimizes reverse recovery loss in synchronous rectifier mode |
Pinout & Package
Package: PowerDI3333-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain paddle; dimensions: 3.30 × 3.30 × 0.80 mm; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain Paddle) | Drain (D) | Monolithic copper paddle forming primary thermal path and high-current drain connection |
| 1, 2, 3, 4 (Source) | Source (S) | Four dedicated source terminals for low-inductance return path and Kelvin sensing capability |
| 5, 6, 7, 8 (Gate) | Gate (G) | Four parallel gate terminals reduce gate loop inductance and improve switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 9 mΩ - Ensures full enhancement with 5V microcontroller GPIO or PWM controller outputs |
| 100% UIS tested | 33 A avalanche current, 55 mJ energy - Guarantees reliability in unclamped inductive switching events |
| Thermally optimized layout | RθJC = 7.8°C/W - Allows direct mounting to thermal plane for high-power density designs |
| Green RoHS-compliant construction | Halogen- and antimony-free, <900 ppm Br/Cl - Meets automotive and industrial environmental compliance mandates |
Applications
| DC-DC Buck Converter | Battery Protection Circuit |
|---|---|
Use Scenario: High-efficiency 12V-to-3.3V point-of-load conversion in telecom base station power modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz with 45A peak current. Use Value: 5.5 mΩ RDS(ON) reduces conduction loss by >35% vs. legacy 8 mΩ devices, improving system efficiency from 92% to 94.2%. | Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: Primary discharge switch controlled by battery management IC with fast fault response. Use Value: 80A pulsed drain rating and 15 ns reverse recovery support rapid current cutoff during fault conditions without oscillation. |
| Motor Drive Half-Bridge | USB-C PD Power Path |
Use Scenario: 24V BLDC motor gate driver stage in industrial automation actuators. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration with bootstrap gate drive. Use Value: 30V VDSS and 100% UIS testing ensure safe commutation under back-EMF transients up to 40V. | Use Scenario: 20V/5A power path switch in USB-C Power Delivery sink applications. IC Role / Device Role / Timing Role: In-line power FET enabling bidirectional current flow with minimal forward drop. Use Value: 0.7V body diode forward voltage and 9 mΩ RDS(ON) at 4.5V enable <120 mW conduction loss at 5A, meeting USB-C thermal limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(ON) = 7.5 mΩ @ 10V; lower ID (35A); same PowerDI3333-8 package | Higher conduction loss in high-current (>30A) applications; reduced thermal margin | Select when cost sensitivity outweighs 15% higher I2R loss at full load |
| NTMFS4C09NT1G | RDS(ON) = 4.2 mΩ @ 10V; SO-8FL package; no integrated thermal paddle | Lower RDS(ON) but RθJA = 70°C/W limits power handling without extra copper | Prefer for space-constrained layouts where thermal budget allows ≤2.5W dissipation |
Compared with DMN3020LSD-13 and NTMFS4C09NT1G, DMN3009SFG-13 delivers superior thermal performance (RθJC = 7.8°C/W) and higher avalanche energy (55 mJ), making it optimal for high-reliability, high-current DC-DC and motor drive applications where thermal derating and transient robustness are critical.
Availability
DMN3009SFG-13 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection systems, and motor drive half-bridges requiring stable component supply across industrial, medical, and communications equipment lifecycles.
Supply support for DMN3009SFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMN3009SFG belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact power supplies and battery-powered systems where thermal performance and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current at TC = +70°C?
The DMN3009SFG-13 supports 35 A continuous drain current at case temperature +70°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated temperatures and assumes proper PCB copper area (1-inch² pad) per datasheet Note 6.
Does this MOSFET require a gate resistor for EMI control?
Yes - a gate resistor (typically 3.3 Ω to 10 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's low gate resistance (Rg = 2.2 Ω) and fast switching (tF = 14.6 ns) make external gate resistance critical for controlling dv/dt and minimizing EMI in high-frequency DC-DC applications.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes - the PowerDI3333-8 package is qualified for lead-free reflow per JEDEC J-STD-020, with Moisture Sensitivity Level 1. It withstands peak reflow temperatures up to 260°C for 30 seconds and requires no pre-bake for standard SMT assembly, provided humidity exposure remains within MSL1 limits.
Can DMN3009SFG-13 be used in automotive applications?
No - the DMN3009SFG-13 is not AEC-Q101 qualified. For automotive use, Diodes offers the pin- and package-compatible DMN3009SFGQ variant, which undergoes additional stress testing and is manufactured in IATF 16949-certified facilities. Use only the Q-suffix part in safety-critical or automotive-grade designs.
DMN3009SFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN3009SFG-13 FAQ
1.How can I place an order for DMN3009SFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3009SFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3009SFG-13 reliable?
The price and inventory of DMN3009SFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3009SFG-13 is usually 5 days.
3.What payment methods are accepted for DMN3009SFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3009SFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3009SFG-13?
DMN3009SFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3009SFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3009SFG-13?
For technical support, including DMN3009SFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3009SFG-13 requirements.
6.How does Aetrix verify that DMN3009SFG-13 is sourced from the original manufacturer or authorized distributors?
All DMN3009SFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3009SFG-13 meets industry standards.
7.What is the process for return or replacement of DMN3009SFG-13?
All DMN3009SFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3009SFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3009SFG-13 part is unused and in its original packaging.
Return procedure for DMN3009SFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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