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Diodes Incorporated DMN3009SFG-7
- Part No.:
- DMN3009SFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN3009SFG-7.pdf
- Description:
- MOSFET N-CH 30V 16A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:144
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Product details
Overview
DMN3009SFG-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 5.5 mΩ RDS(ON) at VGS = 10 V and 45 A continuous drain current at TC = +25°C. It features low input capacitance (Ciss = 2000 pF), 100% production-tested UIS robustness (EAS = 55 mJ), and is optimized for high-efficiency DC-DC converters in battery-powered systems.
For engineers reviewing the DMN3009SFG-7 datasheet, DMN3009SFG-7 pinout, DMN3009SFG-7 application, or DMN3009SFG-7 equivalent, key selection criteria include RDS(ON) @ 4.5 V (9 mΩ), thermal resistance RθJC = 7.8°C/W, gate charge Qg = 42 nC @ 10 V, safe operating area (SOA) limits, and PowerDI3333-8 thermal pad layout compatibility.
Technical Context
This MOSFET employs trench-gate silicon technology to simultaneously minimize conduction loss and switching loss. Its 7.8°C/W junction-to-case thermal resistance enables high-power density operation when mounted on copper-clad PCBs with thermal pads, and its 248 pF Crss supports fast, low-noise switching in synchronous buck topologies.
The device is characterized for stable gate threshold voltage (VGS(TH) = 1–2.5 V) across -55°C to +150°C, and exhibits normalized RDS(ON) variation ≤1.8× over temperature-critical for thermally constrained battery management and portable power applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V nominal bus and 30 V transient clamping in industrial and automotive auxiliary rails. |
| RDS(ON) @ VGS = 10 V | 5.5 mΩ - Enables <1.2 W conduction loss at 20 A, supporting high-current, low-voltage output stages in point-of-load converters. |
| RDS(ON) @ VGS = 4.5 V | 9 mΩ - Ensures reliable turn-on with 5 V logic-level gate drive, suitable for USB PD, e-markers, and battery protection ICs. |
| Qg @ VGS = 10 V | 42 nC - Determines gate driver power requirement and switching transition time; pairs with 3.3 Ω external gate resistor for ~30 ns rise/fall in typical buck designs. |
| EAS | 55 mJ - Confirmed by 100% production UIS testing, allowing robust operation under inductive load transients without snubbers in motor drivers or solenoid controls. |
| RθJC | 7.8°C/W - Enables direct thermal coupling to heatsink or PCB copper plane, supporting >35 W dissipation capability when properly mounted. |
| ID (TC = +25°C) | 45 A - Continuous current rating defined at case temperature, not ambient-requires thermal pad and ≥1 in² 2 oz copper for full rating. |
Pinout & Package
Package: PowerDI3333-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed thermal pad (pin 1 marked by "S" on top view). Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals tied to internal die source metallization and thermal pad-must be soldered to large PCB copper area for thermal and current handling. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to die drain region-forms primary current path and heat sink interface via exposed bottom pad. |
| Gate (G) | Control terminal | Single gate connection (pin not explicitly numbered but located between pins 4 and 5 per top-view marking diagram); requires low-inductance routing to minimize ringing during switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 4.5 V | 9 mΩ enables efficient 5 V gate drive in battery-fuel-gauge circuits and load switches without level-shifting. |
| 100% UIS tested | Each unit passes unclamped inductive switching test (L = 0.1 mH, IAS = 33 A), eliminating need for external avalanche derating in flyback or boost converters. |
| Green compound & RoHS3 compliant | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and medical environmental compliance requirements. |
| Thermally optimized package | PowerDI3333-8's dual-side thermal path (top die attach + bottom thermal pad) reduces RθJA to 59°C/W with 1 in² copper, enabling compact 20–30 W power modules. |
| Low Crss / high Ciss ratio | Crss = 248 pF, Ciss = 2000 pF → 12.5:1 ratio improves Miller immunity and enables stable operation with standard gate drivers at 500 kHz–1 MHz. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Bidirectional overcurrent and short-circuit protection in Li-ion battery packs with integrated fuel gauge ICs. IC Role / Device Role: High-side load switch controlling main discharge path; operates in linear mode during fault limiting and saturated switch mode during normal operation. Use Value: 9 mΩ RDS(ON) @ 4.5 V ensures <100 mV drop at 10 A, preserving battery runtime while supporting fast trip response via low Qgd/Qgs ratio (1.6). |
Use Scenario: 20 V/5 A power path switch in USB-C PD 3.0 sink implementations requiring programmable voltage/current negotiation. IC Role / Device Role: Low-side synchronous rectifier and reverse-current blocking element in buck-boost controller reference designs. Use Value: 5.5 mΩ RDS(ON) minimizes conduction loss in 5 V–20 V variable output range; 2000 pF Ciss allows clean gate drive with TI TPS6598x or STUSB4500 controllers. |
| Industrial DC-DC Converter | Automotive Body Control Module |
|
Use Scenario: High-current synchronous rectifier in 12 V input, 3.3 V/25 A output buck converter for PLC I/O modules. IC Role / Device Role: Bottom-side FET in two-phase interleaved buck stage; handles peak currents up to 45 A with forced-air cooling. Use Value: RθJC = 7.8°C/W enables direct thermal coupling to aluminum heatsink, maintaining TJ < 125°C at full load without derating. |
Use Scenario: Load switch for 12 V accessory rail in BCMs managing seat heaters, mirror defoggers, and LED interior lighting. IC Role / Device Role: High-side smart switch replacing mechanical relays; controlled by CAN-linked microcontroller with diagnostic feedback. Use Value: EAS = 55 mJ withstands inductive kickback from heater coils; AEC-Q101 qualified variant (DMN3009SFGQ) available for full automotive qualification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay SI7157DP-T1-GE3 | RDS(ON) = 6.5 mΩ @ 10 V; Ciss = 2200 pF; SO-8 package (RθJA = 62°C/W, no thermal pad) | Lacks exposed thermal pad; lower current rating (30 A @ TC) and higher thermal resistance limit power density in space-constrained designs. | Prefer when legacy SO-8 footprint required and thermal budget allows 15–20% higher conduction loss. |
| ON Semiconductor NTMFS4C09NT1G | RDS(ON) = 4.5 mΩ @ 10 V; Power33 package (same footprint); Qg = 48 nC; RθJC = 7.5°C/W | Slightly lower RDS(ON) but higher gate charge increases switching loss at >1 MHz; identical thermal performance and pinout. | Choose for ultra-low conduction loss priority where gate driver can support higher Qg, or when sourcing from ON Semi's extended lifecycle program. |
Compared with SI7157DP-T1-GE3, DMN3009SFG-7 delivers 18% lower RDS(ON) and superior thermal management via PowerDI3333-8's thermal pad; versus NTMFS4C09NT1G, it trades 14% higher Qg for tighter VGS(TH) distribution and broader AEC-Q101 qualification path.
Availability
DMN3009SFG-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial DC-DC converters requiring stable component supply, JEDEC-qualified reliability, and RoHS3-compliant manufacturing.
Supply support for DMN3009SFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and Malaysia.
This MOSFET belongs to Diodes' Power Management Discrete portfolio, engineered specifically for high-efficiency, high-reliability power conversion in battery-powered, industrial, and automotive-adjacent applications.
FAQ
What is the maximum allowable gate-source voltage for DMN3009SFG-7?
The absolute maximum VGS is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±12 V risks gate oxide degradation, especially at elevated temperatures. For robust 10 V drive, use a Zener clamp (e.g., BZX84-C10) between gate and source to prevent overshoot during fast switching transitions.
Does DMN3009SFG-7 require a gate resistor, and what value is recommended?
Yes-a series gate resistor is required to control dV/dt and suppress oscillation. With Qg = 42 nC and typical driver output impedance of ~2 Ω, a 3.3 Ω external resistor yields ~30 ns rise/fall times (per tR/tF specs), balancing EMI and switching loss. Lower values increase shoot-through risk in half-bridge configurations.
Can DMN3009SFG-7 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(ON) (normalized drift ≤1.8× from -55°C to +150°C) enables current sharing without active balancing. Ensure matched PCB trace lengths, symmetric thermal mounting, and individual gate resistors to avoid dynamic imbalance during switching transitions.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes-the package is rated for moisture sensitivity level 1 and supports JEDEC J-STD-020D-compliant reflow. Peak temperature must not exceed 260°C for ≤30 seconds; preheat ramp rate ≤3°C/s; and time above 217°C should be 60–150 seconds. Use stencil aperture matching the 0.65 mm thermal pad for optimal solder joint integrity.
DMN3009SFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN3009SFG-7 FAQ
1.How can I place an order for DMN3009SFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3009SFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3009SFG-7 reliable?
The price and inventory of DMN3009SFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3009SFG-7 is usually 5 days.
3.What payment methods are accepted for DMN3009SFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3009SFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3009SFG-7?
DMN3009SFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3009SFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3009SFG-7?
For technical support, including DMN3009SFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3009SFG-7 requirements.
6.How does Aetrix verify that DMN3009SFG-7 is sourced from the original manufacturer or authorized distributors?
All DMN3009SFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3009SFG-7 meets industry standards.
7.What is the process for return or replacement of DMN3009SFG-7?
All DMN3009SFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3009SFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3009SFG-7 part is unused and in its original packaging.
Return procedure for DMN3009SFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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