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Diodes Incorporated DMN3009SFGQ-13
- Part No.:
- DMN3009SFGQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN3009SFGQ-13.pdf
- Description:
- MOSFET N-CH 30V 16A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:8,352
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Product details
Overview
DMN3009SFGQ-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, qualified to AEC-Q101 and PPAP-capable for automotive power management. It delivers 45A continuous drain current at TC = +25°C, 5.5mΩ RDS(on) @ VGS = 10V, and 9mΩ @ VGS = 4.5V - enabling high-efficiency DC-DC conversion in engine control units and battery protection circuits.
For engineers reviewing the DMN3009SFGQ-13 datasheet, DMN3009SFGQ-13 pinout, DMN3009SFGQ-13 application, or DMN3009SFGQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(on) at 4.5V gate drive, thermal resistance of 7.8°C/W (junction-to-case), and suitability for space-constrained automotive power stages requiring <10mΩ on-resistance and >30A pulsed capability.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in 12V/24V automotive systems. Its gate threshold voltage (1.0–2.5V) ensures robust turn-on with standard logic-level drivers, while its 2,000pF input capacitance and 42nC total gate charge at 10V support stable PWM operation up to 500kHz in synchronous buck converters.
The device integrates a body diode with 0.68V forward voltage at 1A and 15ns reverse recovery time, enabling efficient freewheeling in high-frequency topologies. Its 55mJ single-pulse avalanche energy rating and 33A IAS support transient overvoltage resilience in load-dump and inductive switching scenarios.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage compatible with 24V automotive systems including load-dump transients. |
| RDS(on) @ VGS = 10V | 5.5mΩ - Enables ≤1.5W conduction loss at 45A, reducing heatsink requirements in compact ECUs. |
| RDS(on) @ VGS = 4.5V | 9mΩ - Ensures full enhancement with 3.3V/5V microcontroller GPIOs without level-shifting. |
| ID Continuous @ TC = +25°C | 45A - Supports high-current motor drivers and battery disconnect switches in ADAS modules. |
| RθJC | 7.8°C/W - Allows direct thermal coupling to PCB copper pour or metal-core board for passive cooling. |
| Qg @ VGS = 10V | 42nC - Matches standard gate drivers (e.g., UCC27531) for <30ns turn-off delay in 200kHz+ converters. |
| EAS | 55mJ - Withstands repetitive inductive energy spikes in solenoid and fuel injector drivers. |
Pinout & Package
Package: PowerDI3333-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad for low RθJC and high-power density mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (common connection) | All pins 1–8 are internally connected to the drain terminal and exposed copper pad - provides parallel current paths and minimal thermal impedance to PCB ground plane. |
| Source (pins S1–S4) | Source (internal connection) | Four dedicated source terminals (visible as inner pins in top view) reduce source inductance and improve gate-drive stability in high-di/dt applications. |
| Gate (pin G) | Gate input | Single gate terminal (pin 1 indicator adjacent) accepts standard CMOS/TTL logic levels; layout requires <5mm trace length to minimize ringing. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and zero-defect screening. |
| Low RDS(on) at 4.5V drive | 9mΩ enables direct interface with 3.3V/5V MCUs in battery management ICs without external gate drivers. |
| Thermally optimized PowerDI3333-8 | 7.8°C/W RθJC allows 45A operation with only 1-inch² 2oz copper thermal pad - no heatsink required. |
| Green, halogen-free construction | <900ppm Br/Cl and <1000ppm Sb meets automotive OEM environmental compliance mandates (e.g., BMW GS95003). |
| Fast body diode recovery | 15ns tRR and 6nC QRR minimize shoot-through risk and switching losses in synchronous rectification. |
Applications
| Engine Control Unit (ECU) Power Stage | Battery Disconnect Switch |
|---|---|
|
Use Scenario: High-side switch controlling 12V main power rail to fuel injectors and ignition coils. IC Role / Device Role / Timing Role: Primary power switch handling 30A peak loads with <100ns switching transitions under ECU PWM control. Use Value: 5.5mΩ RDS(on) limits conduction loss to <4.5W at 30A, eliminating active cooling while meeting ASIL-B thermal derating requirements. |
Use Scenario: Bidirectional isolation between starter battery and auxiliary 12V LiFePO₄ backup bank in start-stop systems. IC Role / Device Role / Timing Role: Dual-function MOSFET acting as both charge controller and fault-isolation switch during cranking events. Use Value: 33A avalanche current rating and 55mJ EAS withstand repeated 100A cranking surges without degradation. |
| DC-DC Converter in ADAS Camera Module | Electric Power Steering (EPS) Motor Driver |
|
Use Scenario: Synchronous buck converter stepping 12V vehicle supply down to 3.3V for image sensor and SoC power rails. IC Role / Device Role / Timing Role: Low-side switch operating at 400kHz with 42nC Qg and 14.6ns tF for minimal dead-time loss. Use Value: 9mΩ RDS(on) @ 4.5V ensures >94% efficiency at 5A output, critical for thermal-limited camera housing envelopes. |
Use Scenario: Half-bridge leg in three-phase inverter driving 200W EPS assist motor. IC Role / Device Role / Timing Role: High-current phase switch conducting 25A RMS with <5ns propagation delay matching for precise torque control. Use Value: 2,000pF Ciss and 248pF Crss enable clean gate drive with 3.3Ω external resistor, suppressing dv/dt-induced shoot-through. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC010N04LS6 | 40V VDSS, 1.0mΩ RDS(on) @ 10V, PG-TSDSON-8 package, higher cost, tighter gate threshold (1.2–2.2V) | Preferred for 42V mild-hybrid systems; not drop-in due to different thermal pad layout and pinout | Select when 40V rating and sub-1.5mΩ RDS(on) justify premium pricing and PCB redesign. |
| Vishay SQJQ910E | 30V VDSS, 6.0mΩ RDS(on) @ 10V, PowerPAK® SO-8L, AEC-Q101 qualified, 10.5mΩ @ 4.5V | Compatible footprint but lower 4.5V drive performance; 12.5°C/W RθJA vs. 59°C/W for DMN3009SFGQ | Choose for legacy SO-8L board reuse where 4.5V gate drive margin is sufficient and thermal budget allows larger copper area. |
Compared with BSC010N04LS6 and SQJQ910E, DMN3009SFGQ offers the best balance of 4.5V drive capability (9mΩ), thermal performance (7.8°C/W RθJC), and cost for 12V/24V automotive power stages - especially where PPAP documentation and PowerDI3333-8's superior thermal pad coupling are mandatory.
Availability
DMN3009SFGQ-13 is available at Aetrix Electronics and suitable for automotive power management functions, battery disconnect systems, and DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN3009SFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.
The DMN3009SFGQ belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power conversion, motor control, and battery protection - emphasizing low RDS(on), robust avalanche capability, and IATF 16949-compliant traceability.
FAQ
Is DMN3009SFGQ-13 pin-compatible with standard SO-8 or PowerPAK SO-8L packages?
No. DMN3009SFGQ-13 uses the PowerDI3333-8 package, which has an 8-pin layout with all drains connected to a single exposed thermal pad - unlike SO-8 or PowerPAK SO-8L. Its footprint requires specific land pattern dimensions (D = 3.30mm, E = 3.30mm, exposed pad 2.27 × 1.61mm) per Diodes' package outline DS39775.
What is the maximum recommended gate drive voltage for reliable operation?
The absolute maximum gate-source voltage is ±20V, but Diodes specifies VGS = 10V for rated RDS(on) and 4.5V for logic-level compatibility. Driving above 12V provides no significant RDS(on) improvement and increases gate oxide stress - 10V is the optimal balance of performance and reliability.
Does DMN3009SFGQ-13 support bidirectional current flow in battery protection circuits?
Yes. As an N-channel MOSFET with a monolithic body diode, it conducts current from source to drain when VDS < 0. Conducting 20A continuous body diode current (IS) is specified, and its 0.68V VSD at 1A supports efficient reverse-path operation in charge/discharge controllers.
How does the PowerDI3333-8 package improve thermal performance over traditional SO-8?
PowerDI3333-8 reduces junction-to-case thermal resistance to 7.8°C/W by integrating a large exposed drain pad directly soldered to PCB copper - versus ~62°C/W for standard SO-8. This allows 45A continuous current with only 1-inch² 2oz copper, whereas SO-8 would require heatsinking or derating below 20A.
DMN3009SFGQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN3009SFGQ-13 FAQ
1.How can I place an order for DMN3009SFGQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3009SFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3009SFGQ-13 reliable?
The price and inventory of DMN3009SFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3009SFGQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3009SFGQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3009SFGQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3009SFGQ-13?
DMN3009SFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3009SFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3009SFGQ-13?
For technical support, including DMN3009SFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3009SFGQ-13 requirements.
6.How does Aetrix verify that DMN3009SFGQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3009SFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3009SFGQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3009SFGQ-13?
All DMN3009SFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3009SFGQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3009SFGQ-13 part is unused and in its original packaging.
Return procedure for DMN3009SFGQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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