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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3009SFGQ-7

Name: DMN3009SFGQ-7
Brand: Diodes Incorporated
SKU: DMN3009SFGQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3009SFGQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN3009SFGQ-7.pdf

Description:: MOSFET N-CH 30V 16A PWRDI3333

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Product details

Overview

DMN3009SFGQ-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers 5.5 mΩ R_DS(on) at V_GS = 10 V, 45 A continuous drain current at T_C = +25°C, and supports DC-DC converters and battery power management systems requiring low conduction loss and high thermal reliability.

For engineers reviewing the DMN3009SFGQ-7 datasheet, DMN3009SFGQ-7 pinout, DMN3009SFGQ-7 application, or DMN3009SFGQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, 7.8°C/W R_θJC, 42 nC total gate charge at 10 V, and 30 V BVDSS rating for 12 V/24 V automotive rail switching.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and fast switching in high-current, thermally constrained automotive environments. Its gate threshold voltage (1.4–2.5 V) enables robust turn-on with standard 3.3 V or 5 V logic drivers, while the 248 pF Crss ensures controlled dV/dt during commutation.

The device integrates a body diode with 0.68 V typical forward voltage at 1 A and 15 ns reverse recovery time-critical for synchronous rectification in buck converters. Thermal design is supported by an exposed drain pad and 7.8°C/W junction-to-case resistance, enabling direct PCB copper thermal spreading.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	30 V - Maximum blocking voltage compatible with 24 V automotive systems and transient clamping up to ISO 7637-2 Pulse 5a.
RDS(on) Max	5.5 mΩ @ VGS = 10 V - Enables ≤2.5 W conduction loss at 30 A, reducing heatsink requirements in compact DC-DC modules.
ID Continuous	45 A @ TC = +25°C - Supports high-current power stages in engine control units and ADAS domain controllers without derating.
Qg Total	42 nC @ VGS = 10 V - Determines gate drive power and switching speed; pairs with 3.3 Ω external gate resistor for ~30 ns rise/fall in 500 kHz operation.
RθJC	7.8 °C/W - Allows direct thermal coupling to PCB copper pour; enables >2.1 W steady-state dissipation when mounted on ≥1 in² 2 oz copper.
EAS	55 mJ - Withstands single-pulse avalanche energy events common in inductive load switching, improving system robustness without external snubbers.
VGS(th)	1.4–2.5 V - Ensures reliable turn-on across temperature (-55°C to +150°C) with 3.3 V microcontroller GPIOs, avoiding marginal biasing.

Pinout & Package

Package: PowerDI3333-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad (pins 1–4 and 5–8 are source and drain terminals respectively; pin 1 marked by notch).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common low-side return path; electrically tied to internal substrate; requires low-impedance PCB routing for current sensing and thermal conduction.
5, 6, 7, 8	Drain	High-current output node connected to exposed copper pad; primary thermal path to PCB; must be soldered to ≥1 in² 2 oz copper for rated power handling.
Gate	Control input	Pin not assigned individually; gate bond wire connects internally to die; external gate connection made via dedicated pad adjacent to pin 1 corner per layout drawing.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation.
Low RDS(on) with 4.5 V drive	9 mΩ @ VGS = 4.5 V / ID = 16 A - enables efficient operation with 5 V gate drivers in legacy automotive ECUs.
Green, halogen-free construction	<900 ppm Br/Cl, <1000 ppm Sb - meets automotive OEM environmental compliance mandates (e.g., BMW GS 95024, VW TL 52366).
Low Crss & Qgd ratio	248 pF Crss / 7.4 nC Qgd - reduces Miller-induced shoot-through risk and improves hard-switching efficiency in synchronous buck topologies.
150°C max junction temperature	Rated for under-hood operation in ambient up to +105°C with appropriate thermal design - supports placement near engines or inverters.

Applications

Automotive Body Control Module (BCM)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side load switching for headlight, HVAC blower, and seat motor control in centralized BCMs.

IC Role / Device Role / Timing Role: Low-side N-channel switch driven by pre-driver IC; handles repetitive 30 A inrush and steady-state loads.

Use Value: 5.5 mΩ R_DS(on) limits resistive heating to <1.5 W at 16 A, eliminating need for discrete heatsinks in space-constrained modules.

Use Scenario: Synchronous rectifier in 48 V → 12 V bi-directional buck-boost converter for regenerative braking energy recovery.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-R_DS(on) channel enable high-efficiency (<96%) synchronous rectification at 200–500 kHz.

Use Value: 15 ns t_RR and 6 nC Q_RR minimize reverse recovery losses, directly improving converter efficiency by 0.8–1.2% over standard MOSFETs.

Electric Power Steering (EPS) Motor Driver

Automotive Battery Management System (BMS)

Use Scenario: Half-bridge high-side and low-side switches in three-phase EPS inverter driving 150–300 W brushless motors.

IC Role / Device Role / Timing Role: Low-inductance PowerDI3333-8 package minimizes parasitic ringing; 80 A pulsed rating supports motor stall currents.

Use Value: 7.8°C/W R_θJC allows direct mounting to aluminum heat spreader, maintaining T_J <135°C during 10 s peak torque events.

Use Scenario: Cell balancing FET and pack disconnect switch in 12 V/48 V dual-battery BMS architectures.

IC Role / Device Role / Timing Role: Precision-controlled low-R_DS(on) switch for active cell balancing current (≤2 A) and high-reliability main contactor replacement.

Use Value: 1 μA IDSS at 24 V ensures negligible leakage during long-term storage; AEC-Q101 qualification guarantees 15-year field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC010N04LS6	40 V BVDSS, 1.0 mΩ RDS(on) @ 10 V, PowerPAK SO-8 package, higher Qg (64 nC)	Higher voltage margin but larger footprint; less suitable for space-constrained PowerDI3333-8 layouts	Select when 40 V rating is required for future-proofing or 48 V system compatibility.
Vishay SQJQ910E	30 V BVDSS, 4.5 mΩ RDS(on) @ 10 V, PowerPAK 8x8 package, higher RθJA (40°C/W)	Larger thermal pad area but no AEC-Q101 qualification; limited to industrial-grade designs	Select only for non-automotive applications where AEC-Q101 is not mandated and board space permits 8x8 mm footprint.

Compared with BSC010N04LS6 and SQJQ910E, DMN3009SFGQ-7 uniquely balances AEC-Q101 compliance, PowerDI3333-8's ultra-compact footprint, and 5.5 mΩ R_DS(on) - making it optimal for cost- and space-sensitive automotive modules where 30 V rating suffices and PPAP traceability is mandatory.

Availability

DMN3009SFGQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply, full AEC-Q101 traceability, and consistent tape-and-reel delivery.

Supply support for DMN3009SFGQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with IATF 16949-certified facilities.

This MOSFET belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for automotive power conversion and load switching applications demanding high current density, thermal resilience, and long-term reliability under harsh conditions.

FAQ

Is DMN3009SFGQ-7 suitable for high-frequency PWM applications above 1 MHz?

No - its 42 nC total gate charge and 248 pF Crss limit practical switching frequency to ≤500 kHz in hard-switched topologies. For >1 MHz operation, consider devices with Qg <20 nC and Crss <100 pF. This part is optimized for 100–300 kHz automotive DC-DC converters where conduction loss dominates efficiency.

What is the maximum allowable PCB copper area for thermal performance validation?

Diodes specifies 1 inch² of 2 oz copper on the bottom layer for the 137°C/W RθJA rating. For the lower 59°C/W RθJA (junction-to-soldering-point), the exposed drain pad must connect to ≥1.5 inch² of 2 oz copper with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to an internal ground plane - validated per JEDEC JESD51-14.

Does DMN3009SFGQ-7 support bidirectional current flow in battery protection circuits?

No - it is a unidirectional N-channel MOSFET with an integrated body diode oriented source-to-drain. Bidirectional blocking requires back-to-back configuration or a dedicated bidirectional switch IC. Its body diode conducts only from source to drain, limiting use to single-quadrant switching.

Can this MOSFET replace older TO-252 devices in existing automotive designs?

Yes - the PowerDI3333-8 footprint is pin-compatible with many TO-252-2L layouts when using adapter land patterns, but thermal performance differs significantly: RθJC is 7.8°C/W vs. ~50°C/W for TO-252, requiring updated thermal simulation. Electrical characteristics match closely, supporting drop-in replacement with layout revision.

DMN3009SFGQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 900mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMN3009SFGQ-7 FAQ

1.How can I place an order for DMN3009SFGQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3009SFGQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3009SFGQ-7 reliable?

The price and inventory of DMN3009SFGQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3009SFGQ-7 is usually 5 days.

3.What payment methods are accepted for DMN3009SFGQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3009SFGQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3009SFGQ-7?

DMN3009SFGQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3009SFGQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3009SFGQ-7?

For technical support, including DMN3009SFGQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3009SFGQ-7 requirements.

6.How does Aetrix verify that DMN3009SFGQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN3009SFGQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3009SFGQ-7 meets industry standards.

7.What is the process for return or replacement of DMN3009SFGQ-7?

All DMN3009SFGQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3009SFGQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3009SFGQ-7 part is unused and in its original packaging.

Return procedure for DMN3009SFGQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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