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Diodes Incorporated DMN3009SK3-13
- Part No.:
- DMN3009SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMN3009SK3-13.pdf
- Description:
- MOSFET N-CHANNEL 30V 80A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:638
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Product details
Overview
DMN3009SK3-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, optimized for high-efficiency power management. It delivers 5.5 mΩ RDS(ON) at VGS = 10 V and 80 A continuous drain current at TC = +25°C, with low input capacitance (2000 pF) and fast switching (tD(ON) = 3.9 ns), enabling use in synchronous buck converters and motor drive half-bridges.
For engineers reviewing the DMN3009SK3-13 datasheet, DMN3009SK3-13 pinout, DMN3009SK3-13 application, or DMN3009SK3-13 equivalent, key selection criteria include RDS(ON) at 4.5 V (9.0 mΩ), thermal resistance RθJC = 2.8 °C/W, avalanche energy rating (55 mJ), body diode forward voltage (0.7 V), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET employs trench-gate silicon technology to simultaneously reduce conduction loss and gate charge. Its 2.8 °C/W junction-to-case thermal resistance enables high-power operation when mounted on thermally enhanced PCBs with exposed drain pad soldering.
The device features a 33 A unclamped inductive switching (UIS) capability and 55 mJ avalanche energy rating, supporting robust operation under transient overloads. Its 247 pF reverse transfer capacitance (Crss) and 42 nC total gate charge at 10 V support efficient high-frequency PWM control in DC-DC converters up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12 V/24 V rail applications |
| RDS(ON) @ VGS = 10 V | 5.5 mΩ - Enables <1.2 W conduction loss at 80 A in high-current synchronous rectification |
| RDS(ON) @ VGS = 4.5 V | 9.0 mΩ - Supports logic-level gate drive from 3.3 V/5 V controllers without level-shifting |
| Qg @ VGS = 10 V | 42 nC - Determines gate driver power requirement and switching loss in 500 kHz–1 MHz converters |
| Ciss | 2000 pF - Impacts Miller effect and gate drive stability in high-dV/dt environments |
| RθJC | 2.8 °C/W - Allows >40 W power dissipation with ≤112 °C junction rise above case temperature |
| EAS | 55 mJ - Specifies single-pulse avalanche ruggedness for inductive load switching |
Pinout & Package
Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, RoHS-compliant, halogen- and antimony-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to low-side return path and PCB ground plane |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input requiring <2.2 Ω series resistance to damp ringing and limit dI/dt |
| Pin 3 (Drain) | Power output terminal (D) | Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper area |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 9.0 mΩ - Enables direct interface with 3.3 V microcontrollers and PMICs without gate drivers |
| AEC-Q101 qualified | Qualified for automotive powertrain and body electronics per stress test requirements |
| Green compound & RoHS | Halogen-free (<1500 ppm Br+Cl), antimony-free (<1000 ppm), UL 94V-0 rated molding |
| Low Crss | 247 pF - Reduces Miller-induced shoot-through risk in high-side switching configurations |
| Fast turn-off | tD(OFF) = 31 ns - Minimizes dead-time losses in synchronous rectifiers and half-bridge inverters |
Applications
| Automotive Body Control Module (BCM) | Industrial DC-DC Buck Converter |
|---|---|
Use Scenario: High-side load switch for LED headlamp drivers and solenoid actuators in 12 V vehicle systems. IC Role / Device Role / Timing Role: Power switch controlling 5–20 A loads with PWM dimming and short-circuit protection. Use Value: 9.0 mΩ RDS(ON) at 4.5 V ensures full enhancement from BCM MCU GPIO; AEC-Q101 qualification guarantees field reliability. |
Use Scenario: Synchronous rectifier in 48 V to 12 V isolated DC-DC converter for factory automation PLCs. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage operating at 300 kHz with 60 A peak current. Use Value: 5.5 mΩ RDS(ON) and 2.8 °C/W RθJC enable >96% efficiency and <65 °C junction rise under full load. |
| Server VRM Power Stage | Brushless DC Motor Driver Half-Bridge |
Use Scenario: High-current phase leg in multiphase CPU/GPU voltage regulator modules (VRMs). IC Role / Device Role / Timing Role: Bottom-FET in 3-phase interleaved buck topology delivering up to 120 A per phase. Use Value: 42 nC Qg and 2000 pF Ciss allow clean 1 MHz switching with standard DrMOS gate drivers. |
Use Scenario: Low-side switch in 24 V BLDC inverter for HVAC fan and pump drives. IC Role / Device Role / Timing Role: Fast-switching element in 6-step commutation with 15 A RMS current and 100 kHz PWM. Use Value: 55 mJ EAS withstands back-EMF transients during abrupt motor stop; 0.7 V VSD minimizes freewheeling loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFD-7 | RDS(ON) = 2.5 mΩ @ 10 V but only 30 A ID rating; smaller TSOP-6 package with higher RθJA (62 °C/W) | Limited to <15 A continuous loads; unsuitable for high-current PCB layouts requiring DPAK thermal mass | Select when board space is constrained and peak current ≤15 A; avoid for automotive BCM or industrial buck stages. |
| IPB017N10N5ATMA1 | 100 V VDSS, 1.7 mΩ RDS(ON), PG-HSOF-8 package; higher gate charge (64 nC) and cost | Over-specified voltage rating increases cost and layout complexity for 30 V systems | Choose only if future-proofing for 48 V architectures or higher bus fault tolerance is required. |
Compared with DMN3009SK3-13, DMN3025LFD-7 trades thermal performance for compactness, while IPB017N10N5ATMA1 adds unnecessary voltage margin and gate drive burden-making DMN3009SK3-13 the optimal balance of RDS(ON), thermal capability, and 30 V system compatibility.
Availability
DMN3009SK3-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and server VRM power stages requiring stable component supply, AEC-Q101 compliance, and high-current thermal performance.
Supply support for DMN3009SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.
The DMN3009SK3-13 belongs to Diodes' high-performance TrenchMOS® power MOSFET product line, engineered specifically for automotive and industrial power conversion where low RDS(ON), fast switching, and rugged avalanche capability are critical.
FAQ
What is the maximum continuous drain current at 70°C case temperature?
The DMN3009SK3-13 supports 60 A continuous drain current at TC = +70°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO252 package under sustained high-power operation, not device failure-designers must ensure adequate heatsinking or airflow to maintain case temperature within this range.
Is the body diode suitable for synchronous rectification?
Yes-the integrated body diode has a typical forward voltage of 0.7 V at 1 A and reverse recovery charge (Qrr) of 6.0 nC, enabling use in freewheeling paths of buck converters. However, its 15 ns tRR and lack of soft recovery make it less optimal than external Schottky diodes in ultra-high-frequency designs (>2 MHz); synchronous FET replacement is recommended for best efficiency.
Does the TO252 package require special PCB layout considerations?
Yes-the exposed drain pad must be connected to a minimum 4.57 mm × 1.06 mm copper area (per Diodes' suggested pad layout), with multiple thermal vias to inner ground planes. Insufficient copper or missing vias will degrade RθJC performance, raising junction temperature beyond the 150°C maximum and risking premature thermal shutdown or parametric shift.
How does the 55 mJ avalanche energy rating translate to real-world robustness?
The 55 mJ EAS rating is measured under standardized UIS conditions (L = 0.1 mH, single pulse). It confirms reliable operation during inductive turn-off transients-such as motor coil de-energization or relay contact bounce-in automotive and industrial systems. This rating does not extend to repetitive avalanche or linear-mode operation, which requires separate SOA analysis per Figure 12.
DMN3009SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMN3009SK3-13 FAQ
1.How can I place an order for DMN3009SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3009SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3009SK3-13 reliable?
The price and inventory of DMN3009SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3009SK3-13 is usually 5 days.
3.What payment methods are accepted for DMN3009SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3009SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3009SK3-13?
DMN3009SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3009SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3009SK3-13?
For technical support, including DMN3009SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3009SK3-13 requirements.
6.How does Aetrix verify that DMN3009SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMN3009SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3009SK3-13 meets industry standards.
7.What is the process for return or replacement of DMN3009SK3-13?
All DMN3009SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3009SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3009SK3-13 part is unused and in its original packaging.
Return procedure for DMN3009SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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