Diodes Incorporated DMN3010LFG-13

Overview

DMN3010LFG-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in POWERDI®3333-8 package, rated for 30V V(BR)DSS, 8.5mΩ RDS(ON) @ 10V VGS, and 30A continuous drain current at TC = +25°C. It serves as a high-efficiency power switch in DC-DC converters and LED backlighting circuits where low conduction loss and thermal efficiency are critical.

For engineers reviewing the DMN3010LFG-13 datasheet, DMN3010LFG-13 pinout, DMN3010LFG-13 application, or DMN3010LFG-13 equivalent, key selection criteria include its 4.8°C/W RθJC, 100% UIS-rated avalanche capability, 16.1–32nC total gate charge at 4.5V, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs planar trench-gate technology to achieve ultra-low RDS(ON) while maintaining fast switching performance: tD(on) ≤ 10ns, tf ≤ 21ns, and Qgd ≤ 12nC at VDS = 15V. Its gate threshold voltage (1.0–2.5V) enables robust 4.5V logic-level drive compatibility.

The device integrates a body diode with VSD = 0.75–1.0V at IS = 1A and trr = 13.7–27ns, supporting synchronous rectification and flyback recovery in compact power stages. Thermal design is enabled by the POWERDI3333-8's low-profile, thermally enhanced leadframe structure with direct die-to-case path.

Key Specifications

Pinout & Package

Package: POWERDI®3333-8 - 3.3mm × 3.3mm × 0.8mm surface-mount package with exposed thermal pad, molded green compound (UL 94V-0), and matte tin–annealed copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3010LFG-13, DMN3010LSD-13 trades board space for easier thermal management, while DMT3006LPS-13 delivers lower RDS(ON) at the cost of higher gate drive demand and no automotive qualification - making DMN3010LFG-13 optimal for space-constrained AEC-Q101-compliant designs.

Availability

DMN3010LFG-13 is available at Aetrix Electronics and suitable for automotive infotainment systems, portable DC-DC converters, and LED backlighting applications requiring stable component supply and long-term lifecycle support.

Supply support for DMN3010LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

DMN3010LFG-13 belongs to Diodes' POWERDI® family of thermally optimized MOSFETs, designed specifically for high-density, high-efficiency power conversion in automotive, industrial, and consumer applications.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMN3010LFG-13 supports 20A continuous drain current at TC = +100°C per the datasheet's Maximum Ratings table. This derating reflects thermal limitations of the POWERDI3333-8 package under sustained high-temperature case conditions, not ambient temperature constraints.

Is the body diode suitable for synchronous rectification?

Yes - the intrinsic body diode has VSD = 0.75–1.0V at IS = 1A and reverse recovery time trr = 13.7–27ns, enabling use in synchronous buck topologies up to ~1MHz. However, external Schottky diodes may be preferred for lowest forward drop in ultra-high-efficiency designs.

Does DMN3010LFG-13 require gate resistors for EMI control?

A series gate resistor (typically 3–10Ω) is recommended to damp ringing and limit dV/dt-induced shoot-through in half-bridge configurations. The datasheet specifies RGEN = 3Ω for SOA characterization, and layout parasitics must be minimized due to the device's fast 10.7–21ns fall time.

How does the POWERDI3333-8 package compare thermally to SO-8?

POWERDI3333-8 achieves RθJC = 4.8°C/W versus ~5.5°C/W for standard SO-8, and RθJA = 52°C/W (with thermal vias) versus ~62°C/W for SO-8. Its smaller footprint and exposed copper pad enable superior heat transfer to inner-layer copper planes, especially in multi-layer PCBs.