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Diodes Incorporated DMN3010LSS-13

Part No.:
DMN3010LSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMN3010LSS-13.pdf
Description:
MOSFET N-CH 30V 16A 8SOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,357

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Product details

Overview

DMN3010LSS-13 from Diodes Incorporated is a single N-channel enhancement-mode MOSFET in SOP-8L package, rated for 30 V VDSS, 16 A continuous drain current at 25°C, and 9 mΩ RDS(on) at VGS = 10 V. It features low gate threshold (1.1–2.0 V), fast switching (td(on) = 7.11 ns), and AEC-Q101 qualification for automotive power management.

For engineers reviewing the DMN3010LSS-13 datasheet, DMN3010LSS-13 pinout, DMN3010LSS-13 application, or DMN3010LSS-13 equivalent, key selection criteria include RDS(on) at 4.5 V (13 mΩ), thermal resistance (RθJA = 50 °C/W), pulsed current capability (64 A), and SOP-8L footprint compatibility with high-density DC-DC and motor drive layouts.

Technical Context

This MOSFET operates in enhancement mode with a nominal gate threshold of 1.6 V, enabling direct drive from 3.3 V and 5 V logic controllers. Its low input capacitance (Ciss = 2096 pF) and gate resistance (RG = 1.2 Ω) support clean, low-loss switching up to several MHz in synchronous buck converters.

The integrated body diode exhibits VSD = 0.5–1.2 V at 16 A, with reverse recovery characteristics suitable for freewheeling in half-bridge topologies. Thermal design leverages the SOP-8L's 50 °C/W junction-to-ambient rating on 2 oz. copper FR-4, validated per J-STD-020D Level 1 moisture sensitivity.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - supports 24 V nominal bus systems with 25% headroom for transients
RDS(on) @ 10 V9 mΩ - enables <1.5 W conduction loss at 12 A in high-efficiency 12 V loads
RDS(on) @ 4.5 V13 mΩ - ensures full enhancement with 3.3 V microcontroller GPIO or PWM drivers
ID (continuous)16 A @ 25°C - delivers >10 A sustained current in thermally optimized PCB layouts
Qg22.4–43.7 nC - determines gate driver strength requirement for <100 ns switching transitions
RθJA50 °C/W - defines minimum copper area needed to maintain TJ < 125°C at 2.5 W dissipation
AEC-Q101Qualified - meets stress test requirements for automotive under-hood power stages

Pinout & Package

Package: SOP-8L (Surface-Mount Small Outline Package, 8-lead, gull-wing). Dimensions per Diodes DS31259 Rev. 6-2: 5.0 × 6.0 mm body, 1.27 mm lead pitch, 1.5 mm max height. RoHS-compliant matte tin finish over copper lead frame.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts 0–20 V bias; requires ≤43.7 nC charge for full turn-on
2 (S)SourceReference node for gate drive; common return path for load current and body diode conduction
3 (D)DrainMain power output; connected to internal parallel die structure for low RDS(on)
4 (D)DrainRedundant drain connection; improves current sharing and thermal spreading in SOP-8L layout
5 (D)DrainThird drain terminal; reduces package inductance and enhances pulsed current handling (64 A)
6 (D)DrainFourth drain terminal; provides low-impedance path for high-frequency switching return currents
7 (S)SourceSecond source connection; lowers source inductance and improves stability in high-dI/dt applications
8 (S)SourceThird source terminal; enables Kelvin-source sensing or separate power/return routing

Key Features

FeatureDesign Value
Low RDS(on) at 4.5 V13 mΩ - eliminates need for level-shifting gate drivers in 3.3 V control systems
AEC-Q101 qualificationValidated for automotive temperature cycling, HTRB, and ESD per JEDEC standards
SOP-8L thermal performanceRθJA = 50 °C/W on standard FR-4 - enables 2.5 W operation without heatsink
Low Ciss/Coss ratio2096 pF / 329 pF - improves hard-switching efficiency and reduces EMI generation
Body diode forward voltageVSD = 0.5 V min - minimizes freewheeling losses in synchronous rectifier configurations

Applications

Automotive Body Control ModuleIndustrial 24 V DC-DC Converter

Use Scenario: Driving solenoids, relays, and LED arrays in vehicle door modules and lighting control units.

IC Role / Device Role / Timing Role: High-side or low-side power switch managing 5–15 A loads with PWM dimming or timed actuation.

Use Value: 13 mΩ RDS(on) at 4.5 V allows direct MCU GPIO control; AEC-Q101 ensures reliability across –40°C to +125°C ambient.

Use Scenario: Synchronous rectification in isolated 24 V input, 5/12 V output flyback or forward converters.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve conversion efficiency above 85%.

Use Value: 9 mΩ RDS(on) cuts conduction loss by >60% vs. 40 V Schottky; low Qgd/Qgs ratio enables stable ZVS operation.

Brushless DC Motor Driver Half-BridgeServer PSU OR-ing Circuit

Use Scenario: Low-side switching in 3-phase BLDC gate driver ICs for fans and pumps in data center cooling systems.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch paired with external high-side driver; handles 10–16 A peak phase current.

Use Value: 7.11 ns td(on) and 10.3 ns rise time support >100 kHz PWM; SOP-8L footprint simplifies multi-phase layout density.

Use Scenario: Redundant 12 V input OR-ing in dual-power-supply server backplanes.

IC Role / Device Role / Timing Role: Ideal diode replacement with ultra-low forward drop and reverse blocking.

Use Value: 0.5 V VSD and 1 μA IDSS minimize standby loss; 30 V rating covers input ripple and hot-swap transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3020LSS-13RDS(on) = 14 mΩ @ 4.5 V; higher Qg (48 nC); same SOP-8L packageMarginally lower efficiency at light loads due to higher gate chargeSelect when cost sensitivity outweighs 0.5 mΩ RDS(on) gain and gate drive capability permits higher Qg
SI2300DS-T1-GE3RDS(on) = 28 mΩ @ 4.5 V; lower VDSS (20 V); SOT-23 packageNot suitable for 24 V systems; limited to ≤6 A continuous currentChoose only for space-constrained, low-power (<3 W) 3.3/5 V logic-level applications

Compared with DMN3020LSS-13 and SI2300DS-T1-GE3, DMN3010LSS-13 uniquely balances 13 mΩ RDS(on) at 4.5 V, 64 A pulsed rating, and AEC-Q101 compliance-making it optimal for automotive and industrial 24 V power switches where efficiency, surge robustness, and qualification are jointly critical.

Availability

DMN3010LSS-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, BLDC motor drives, and server OR-ing circuits requiring stable component supply and long-term lifecycle assurance.

Supply support for DMN3010LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMN3010LSS-13 belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered specifically for high-current, low-voltage switching in automotive and industrial power systems where gate drive simplicity and thermal robustness are essential.

FAQ

What is the maximum safe operating temperature for DMN3010LSS-13?

The device supports junction temperatures from –55°C to +150°C. With RθJA = 50 °C/W and PD = 2.5 W, maximum ambient temperature is +25°C for full-power operation on standard FR-4. Derating is required above that; at 70°C ambient, continuous ID drops to 13 A per datasheet ratings.

Can DMN3010LSS-13 be used in high-side switching configurations?

Yes, but requires a gate driver capable of providing VGS ≥ 10 V referenced to the source node. Its 20 V VGS rating and 1.1–2.0 V VGS(th) allow bootstrap or charge-pump-based high-side control in half-bridge topologies up to 30 V bus voltage.

Is the SOP-8L package lead-free and RoHS compliant?

Yes. The DMN3010LSS-13 uses matte tin annealed over copper lead frame and green molding compound, meeting RoHS Directive 2011/65/EU and Diodes' "Lead Free By Design" specification (Note 2 in datasheet DS31259).

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has VSD = 0.5–1.2 V at 16 A and exhibits soft reverse recovery, reducing EMI versus fast-recovery discretes. While not as low-drop as premium Schottkys, its co-packaged integration eliminates layout parasitics and reduces component count in synchronous rectifiers.

DMN3010LSS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
43.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2096 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP

DMN3010LSS-13 FAQ

1.How can I place an order for DMN3010LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3010LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3010LSS-13 reliable?

The price and inventory of DMN3010LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3010LSS-13 is usually 5 days.

3.What payment methods are accepted for DMN3010LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3010LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3010LSS-13?

DMN3010LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3010LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3010LSS-13?

For technical support, including DMN3010LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3010LSS-13 requirements.

6.How does Aetrix verify that DMN3010LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMN3010LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3010LSS-13 meets industry standards.

7.What is the process for return or replacement of DMN3010LSS-13?

All DMN3010LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3010LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3010LSS-13 part is unused and in its original packaging.

Return procedure for DMN3010LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3010LSS-13 Tags

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