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Diodes Incorporated DMN3012LEG-13

Part No.:
DMN3012LEG-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerLDFN
Datasheet:
AetrixDMN3012LEG-13.pdf
Description:
MOSFET 2N-CH 30V 10A PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,000

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Product details

Overview

DMN3012LEG-13 from Diodes Incorporated is a dual-channel 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring Q1 with RDS(ON) = 12 mΩ @ VGS = 5 V, ID = 15 A and Q2 with RDS(ON) = 6 mΩ @ VGS = 5 V, ID = 15 A, optimized for synchronous rectification in high-efficiency DC-DC converters.

For engineers reviewing the DMN3012LEG-13 datasheet, DMN3012LEG-13 pinout, DMN3012LEG-13 application, or DMN3012LEG-13 equivalent, this dual MOSFET supports low-loss power conversion in compact point-of-load regulators, battery-powered systems, and USB-C PD power stages where thermal performance and gate drive efficiency are critical.

Technical Context

This device integrates two independent N-channel MOSFETs-Q1 (higher threshold, 1–2.1 V) and Q2 (lower threshold, 0.75–1.15 V)-in a single PowerDI3333-8 thermally enhanced package with exposed die clip. Each channel is rated for 30 V VDSS, ±10 V VGSS, and supports continuous drain currents up to 20 A (Q1) and 20 A (Q2) at TC = 25°C.

Q1 and Q2 exhibit distinct dynamic characteristics: Q1 has Ciss = 650–850 pF and Qg = 4.7–6.1 nC; Q2 has higher capacitance (Ciss = 1137–1480 pF) and charge (Qg = 9.7–12.6 nC), enabling optimized timing control in asymmetric synchronous buck topologies where Q2 serves as the low-side switch.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum blocking voltage for both channels; suitable for 24 V input rails and 5 V/3.3 V output stages.
RDS(ON) Q1 / Q2 12 mΩ / 6 mΩ @ 5 V - Enables <1.8 W conduction loss per channel at 15 A, reducing thermal load in space-constrained PCBs.
Qg Q1 / Q2 4.7–6.1 nC / 9.7–12.6 nC - Low-to-moderate gate charge enables efficient 1–2 MHz switching with standard gate drivers.
tR/tF Q1 / Q2 2.7 ns / 3.5 ns rise; 2.3 ns / 2.9 ns fall - Fast edge rates minimize switching transition losses in high-frequency converters.
RθJC 9.5 °C/W - Direct thermal path from junction to case allows >1.4 W continuous dissipation at TC = 70°C without heatsink.
UIS Rating 34 A / 50 A avalanche current - 100% production-tested ruggedness supports reliable operation under inductive load transients.

Pinout & Package

Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed copper die pad for low RθJC. Dimensions: 3.30 mm × 3.30 mm × 1.20 mm (L×W×H), moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Q1 Source Common source connection for high-side MOSFET; tied to power ground or SW node depending on topology.
5, 6, 7, 8 Q2 Source Independent source for low-side MOSFET; enables separate grounding or sensing for current monitoring.
Exposed Pad Thermal & Electrical Common Drain Internally connected to both drains; must be soldered to large copper pour for thermal management and EMI reduction.

Key Features

Feature Design Value
Asymmetric dual-channel design Q1 (12 mΩ, 2.1 V VGS(TH)) + Q2 (6 mΩ, 1.15 V VGS(TH)) enables optimized gate drive sequencing in synchronous buck converters.
100% UIS tested Guarantees robustness against inductive energy spikes during hard-switching events without derating.
Low Coss Q1 / Q2 314–410 pF / 620–810 pF - Reduces turn-off loss and improves light-load efficiency in resonant and ZVS designs.
Green, RoHS-compliant construction Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); matte tin annealed terminals ensure MIL-STD-202 solderability.

Applications

USB-C Power Delivery Adapter Industrial 24V-to-5V Point-of-Load Converter

Use Scenario: High-density AC-DC adapter delivering 60 W via USB-C PD 3.0 with programmable voltage.

IC Role / Device Role / Timing Role: Dual MOSFET implements synchronous rectification in secondary-side LLC resonant converter; Q2 handles low-side switching with faster turn-on to minimize body diode conduction.

Use Value: 6 mΩ RDS(ON) reduces conduction loss by 42% vs. discrete 10 mΩ devices, enabling >95% peak efficiency at 3 A load.

Use Scenario: DIN-rail mounted PLC I/O module requiring isolated 24 V input to 5 V/3 A logic rail.

IC Role / Device Role / Timing Role: Q1 functions as high-side switch in active clamp forward topology; Q2 serves as synchronous rectifier in secondary winding.

Use Value: 9.5 °C/W RθJC allows full 15 A current handling with only 2 cm² thermal pad, eliminating need for external heatsink in sealed enclosures.

Portable Medical Infusion Pump Automotive ADAS Camera Power Supply

Use Scenario: Battery-powered infusion pump with 12 V Li-ion input regulating to 3.3 V for microcontroller and motor driver.

IC Role / Device Role / Timing Role: Q1/Q2 operate in interleaved synchronous buck configuration to halve ripple current and reduce output capacitor count.

Use Value: 12 mΩ/6 mΩ asymmetry enables precise duty cycle matching across phases, maintaining <±1.5% output regulation over 0–100% load step.

Use Scenario: 12 V automotive camera module powering image sensor and ISP with strict EMI limits.

IC Role / Device Role / Timing Role: Q1 acts as input-side hot-swap FET; Q2 serves as low-noise synchronous rectifier in post-regulator stage.

Use Value: Low Crss (12–32 pF) minimizes gate-drive coupling noise, meeting CISPR-25 Class 5 radiated emissions without added shielding.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3022LSD-13 Single-channel 30 V, 2.2 mΩ @ 5 V; no integrated dual topology or asymmetric thresholds. Requires two discrete devices to match DMN3012LEG-13's integration; increases board area and layout complexity. Select when ultra-low RDS(ON) is prioritized over space savings and gate drive coordination.
SiR872DP-T1-GE3 30 V dual N-channel with matched 3.5 mΩ RDS(ON); higher Qg (15.5 nC) and larger PowerPAK® 1212-8 package. Better conduction loss but slower switching and 3× larger footprint; unsuitable for sub-10 mm² designs. Prefer for high-current (>25 A) industrial supplies where thermal margin outweighs size constraints.

Compared with DMN3022LSD-13 and SiR872DP-T1-GE3, DMN3012LEG-13 uniquely balances asymmetric RDS(ON), low gate charge, and minimal 3.3 mm × 3.3 mm footprint-enabling compact, high-frequency synchronous converters without sacrificing ruggedness or thermal headroom.

Availability

DMN3012LEG-13 is available at Aetrix Electronics and suitable for USB-C PD adapters, industrial point-of-load converters, portable medical devices, and automotive camera power supplies requiring stable component supply and long-term lifecycle support.

Supply support for DMN3012LEG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

DMN3012LEG-13 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained DC-DC conversion in consumer, industrial, and automotive end equipment.

FAQ

What is the maximum continuous drain current rating for each channel at TC = 70°C?

Q1 supports 16 A and Q2 supports 16 A continuous drain current at case temperature 70°C, as specified in the Absolute Maximum Ratings table. These values assume proper PCB thermal design with ≥1 inch² of 2 oz copper connected to the exposed drain pad.

Can DMN3012LEG-13 be used in a synchronous boost converter configuration?

Yes-Q1 and Q2 can be configured as high-side and low-side switches respectively in a synchronous boost topology. Their 30 V VDSS, low RDS(ON), and fast switching enable efficient 12 V-to-24 V conversion up to 500 kHz, provided gate drive voltage exceeds VGS(TH) margins for both channels.

Is the exposed thermal pad electrically isolated or connected internally?

The exposed pad is internally connected to both MOSFET drains and must be soldered to a common PCB copper pour serving as both thermal sink and drain node. It is not electrically isolated and must be routed accordingly to avoid short circuits in multi-rail systems.

Does DMN3012LEG-13 require gate resistors for stable operation?

Gate resistors are recommended: 2 Ω for Q1 and 1 Ω for Q2, based on typical test conditions in the datasheet. These values dampen ringing, control dV/dt, and prevent shoot-through in synchronous topologies while maintaining <7.7 ns tD(ON) and <9.6 ns tD(OFF).

DMN3012LEG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerLDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs:
12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id:
2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
850pF @ 15V, 1480pF @ 15V
Power - Max:
2.2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8 (Type D)

DMN3012LEG-13 FAQ

1.How can I place an order for DMN3012LEG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3012LEG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3012LEG-13 reliable?

The price and inventory of DMN3012LEG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3012LEG-13 is usually 5 days.

3.What payment methods are accepted for DMN3012LEG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3012LEG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3012LEG-13?

DMN3012LEG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3012LEG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3012LEG-13?

For technical support, including DMN3012LEG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3012LEG-13 requirements.

6.How does Aetrix verify that DMN3012LEG-13 is sourced from the original manufacturer or authorized distributors?

All DMN3012LEG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3012LEG-13 meets industry standards.

7.What is the process for return or replacement of DMN3012LEG-13?

All DMN3012LEG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3012LEG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3012LEG-13 part is unused and in its original packaging.

Return procedure for DMN3012LEG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3012LEG-13 Tags

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