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Diodes Incorporated DMN3012LEG-7
- Part No.:
- DMN3012LEG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerLDFN
- Datasheet:
-
DMN3012LEG-7.pdf
- Description:
- MOSFET 2N-CH 30V 10A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:8,594
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Product details
Overview
DMN3012LEG-7 from Diodes Incorporated is a dual-channel 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring Q1 with 12 mΩ RDS(ON) and Q2 with 6 mΩ RDS(ON) at VGS = 5 V and ID = 15 A, rated for continuous drain current up to 20 A (Q1) and 16 A (Q2) at TC = 25°C, optimized for high-efficiency synchronous rectification in DC-DC converters.
For engineers reviewing the DMN3012LEG-7 datasheet, DMN3012LEG-7 pinout, DMN3012LEG-7 application, or DMN3012LEG-7 equivalent, this dual MOSFET supports low-loss power conversion in compact space-constrained designs requiring matched channel characteristics, fast switching (tF ≤ 2.9 ns), and robust UIS capability (EAS = 125 mJ for Q2).
Technical Context
This device integrates two discrete N-channel MOSFETs-Q1 (higher threshold, higher RDS(ON)) and Q2 (lower VGS(TH) = 0.75–1.15 V, lower RDS(ON) = 5.2–6 mΩ)-in a single thermally enhanced PowerDI3333-8 package with exposed die clip for improved thermal resistance (RθJC = 9.5°C/W). Both channels share common source configuration per internal layout.
It delivers fast switching performance (Qg = 4.7–6.1 nC for Q1; 9.7–12.6 nC for Q2), low input capacitance (Ciss = 650–850 pF for Q1; 1137–1480 pF for Q2), and guaranteed avalanche energy rating (EAS = 58 mJ for Q1, 125 mJ for Q2), enabling reliable operation in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for both channels; suitable for 24 V nominal bus systems with margin. |
| RDS(ON) Q1 / Q2 | 12 mΩ / 6 mΩ @ VGS = 5 V, ID = 15 A - Enables <1.8 W conduction loss per channel at 15 A, critical for high-current point-of-load regulation. |
| ID Continuous (TC = 25°C) | 20 A / 16 A - Supports high-current synchronous buck stages without external heatsinking under moderate PCB copper area. |
| Qg | 4.7–6.1 nC (Q1), 9.7–12.6 nC (Q2) - Low gate charge enables efficient drive with standard gate drivers and reduces switching losses at >1 MHz frequencies. |
| EAS | 58 mJ (Q1), 125 mJ (Q2) - Confirmed unclamped inductive switching capability ensures ruggedness during transient overloads in converter output stages. |
| RθJC | 9.5°C/W - Enables direct thermal coupling to PCB copper or heatsink, supporting power dissipation up to 2.2 W at TC = 25°C. |
| VGS(TH) | 1.0–2.1 V (Q1), 0.75–1.15 V (Q2) - Allows stable turn-on with logic-level gate drive; Q2's lower threshold supports adaptive gate control schemes. |
Pinout & Package
Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed die clip; dimensions 3.30 mm × 3.30 mm × 1.20 mm; RoHS-compliant matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (Q1) | Common source connection for Q1; electrically tied to exposed die clip for low-inductance return path and thermal conduction. |
| 5, 6, 7, 8 | Source (Q2) | Common source connection for Q2; separate metallization from Q1 source to enable independent source referencing in half-bridge configurations. |
| Pin 1 (top-left corner marker) | Gate (Q1) | Control terminal for Q1; requires <6.1 nC charge for full enhancement; compatible with 3.3 V/5 V logic drivers. |
| Pin 5 (bottom-left corner marker) | Gate (Q2) | Control terminal for Q2; lower VGS(TH) allows earlier turn-on; gate resistance Rg = 0.54–1.1 Ω aids EMI control. |
| Pin 3 & Pin 7 | Drain (Q1/Q2) | Power output terminals; isolated drain pads support independent routing of high-side and low-side paths in synchronous rectifier layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual-channel architecture | Q1 and Q2 co-packaged with controlled parametric spread (RDS(ON) ratio ~2×, VGS(TH) offset ~0.5 V) for precise timing alignment in synchronous rectifiers. |
| 100% production UIS tested | Each unit validated for unclamped inductive switching up to 50 A (Q2) and 34 A (Q1), ensuring reliability in flyback and LLC resonant converter freewheeling phases. |
| Low Coss and Crss | Q2: Coss = 620–810 pF, Crss = 24–32 pF - minimizes capacitive turn-off losses and improves zero-voltage switching (ZVS) behavior in high-frequency topologies. |
| Green compound packaging | Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm), UL 94V-0 rated, compliant with RoHS 3 (2015/863/EU). |
| Thermally optimized leadframe | Exposed die clip and 2 oz copper PCB pad support junction-to-case thermal resistance of 9.5°C/W, enabling 1.4 W dissipation at TC = 70°C. |
Applications
| Server VRM Output Stage | USB-C PD Fast Charger |
|---|---|
Use Scenario: High-current, high-efficiency 12 V → 1.8 V conversion delivering up to 120 A to CPU/GPU cores using multiphase buck topology. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier where Q2 serves as low-side switch (low RDS(ON), fast tF) and Q1 acts as high-side switch (higher VGS(TH) for controlled dead-time management). Use Value: Achieves >95% efficiency at 50 A load by minimizing conduction loss (6 mΩ Q2) and reducing gate drive loss (Qg = 9.7 nC) versus discrete solutions. | Use Scenario: 100 W USB-C Power Delivery adapter with 30 V input stage and 20 V/5 A output, requiring compact, thermally robust secondary-side rectification. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback, with Q1 and Q2 operating in complementary mode to replace Schottky diodes. Use Value: Reduces forward voltage drop from ~0.5 V (Schottky) to <0.1 V (RDS(ON) × ID), cutting rectifier loss by >70% and enabling smaller heatsinks. |
| Industrial PLC Power Module | Automotive ADAS Camera Power Supply |
Use Scenario: 24 V industrial input converted to 5 V/3.3 V for programmable logic controllers, operating continuously at ambient temperatures up to +70°C. IC Role / Device Role / Timing Role: Primary synchronous rectifier in isolated DC-DC module, leveraging Q2's low RDS(ON) for main output and Q1's higher avalanche rating for fault tolerance. Use Value: Maintains stable operation across -40°C to +125°C junction range with <15% RDS(ON) drift (Fig. 10), eliminating need for derating in convection-cooled enclosures. | Use Scenario: Compact 12 V → 3.3 V power supply for automotive surround-view camera modules, subject to ISO 7637-2 pulse loads and AEC-Q101 stress conditions. IC Role / Device Role / Timing Role: Low-side synchronous switch in buck regulator, using Q2's 6 mΩ RDS(ON) and 125 mJ EAS to absorb load dump transients without failure. Use Value: Survives 100 V/50 ms load dump pulses (per AEC-Q101 Annex G) due to validated UIS performance, reducing system-level TVS requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3022LSD-13 | Single-chip dual MOSFET in PowerDI3333-8, but Q1/Q2 RDS(ON) = 15 mΩ / 7.5 mΩ @ 5 V - higher conduction loss than DMN3012LEG-7. | Same footprint and pinout; however, higher RDS(ON) increases I²R loss by ~25% at 15 A, limiting use in >60 W applications. | Select when cost sensitivity outweighs efficiency targets and thermal margin is available. |
| SiA921EDJ-T1-GE3 | 30 V dual N-channel in PowerPAK® 1212-8, Q1/Q2 RDS(ON) = 11.5 mΩ / 5.8 mΩ - slightly lower RDS(ON), but no production UIS rating published. | Compatible gate drive and voltage rating; lacks documented avalanche energy spec, requiring external snubbing in inductive loads. | Prefer for non-inductive or clamped topologies where UIS is not required; verify thermal performance on 1212-8 pad layout. |
Compared with DMN3012LEG-7, DMN3022LSD-13 trades efficiency for cost in space-constrained designs, while SiA921EDJ-T1-GE3 offers marginally better conduction loss but lacks verified UIS robustness-making DMN3012LEG-7 optimal for unclamped inductive switching in DC-DC outputs.
Availability
DMN3012LEG-7 is available at Aetrix Electronics and suitable for server VRM output stages, USB-C PD fast chargers, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and traceable green-sourcing compliance.
Supply support for DMN3012LEG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design and manufacturing operations across Asia, Europe, and the Americas.
The DMN3012LEG-7 belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in computing, consumer, and industrial applications where thermal performance and parametric matching are critical.
FAQ
What is the maximum continuous drain current rating for each channel at TC = 70°C?
At case temperature of 70°C, Q1 supports 16 A continuous drain current and Q2 supports 12 A, as specified in the Absolute Maximum Ratings table. These values reflect thermal derating due to reduced power dissipation capability (PD = 1.4 W at TC = 70°C) and ensure safe operation within the SOA limits shown in Figures 21 and 22.
Does DMN3012LEG-7 support logic-level gate drive at 3.3 V?
Q2 has a gate threshold voltage range of 0.75–1.15 V, enabling partial turn-on at 3.3 V, but full enhancement requires VGS ≥ 4.5 V to achieve rated RDS(ON). Q1's VGS(TH) (1.0–2.1 V) also permits 3.3 V activation, though RDS(ON) will be elevated (~25 mΩ) versus the 12 mΩ spec at 5 V. For guaranteed performance, 5 V gate drive is recommended.
How is the thermal performance affected by PCB layout?
Thermal resistance RθJA drops from 58°C/W (standard FR-4, 1-inch² copper) to ~36°C/W (t < 10 s) with proper layout: using the recommended 2.8 mm × 1.9 mm thermal pad (Y3/Y4), 2 oz copper, and multiple vias to inner ground planes. The exposed die clip must be soldered directly to this pad-any gap or insufficient solder voids degrades RθJC and risks thermal runaway above 1.2 W.
Can DMN3012LEG-7 be used in a half-bridge configuration?
Yes-its independent drain (Pin 3 for Q1, Pin 7 for Q2) and separate source terminals (Pins 1–4 for Q1, Pins 5–8 for Q2) allow implementation as a half-bridge with floating high-side drive. However, Q1's higher VGS(TH) and RDS(ON) make it better suited as the high-side switch, while Q2's lower parameters optimize it for low-side synchronous rectification, aligning with typical bootstrap gate driver constraints.
DMN3012LEG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerLDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta), 20A (Tc)
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA, 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1nC @ 4.5V, 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 850pF @ 15V, 1480pF @ 15V
- Power - Max:
- 2.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type D)
DMN3012LEG-7 FAQ
1.How can I place an order for DMN3012LEG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3012LEG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3012LEG-7 reliable?
The price and inventory of DMN3012LEG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3012LEG-7 is usually 5 days.
3.What payment methods are accepted for DMN3012LEG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3012LEG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3012LEG-7?
DMN3012LEG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3012LEG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3012LEG-7?
For technical support, including DMN3012LEG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3012LEG-7 requirements.
6.How does Aetrix verify that DMN3012LEG-7 is sourced from the original manufacturer or authorized distributors?
All DMN3012LEG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3012LEG-7 meets industry standards.
7.What is the process for return or replacement of DMN3012LEG-7?
All DMN3012LEG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3012LEG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3012LEG-7 part is unused and in its original packaging.
Return procedure for DMN3012LEG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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