Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN3012LFG-13

Name: DMN3012LFG-13
Brand: Diodes Incorporated
SKU: DMN3012LFG-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMN3012LFG-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-PowerLDFN

Datasheet:: DMN3012LFG-13.pdf

Description:: MOSFET 2N-CH 30V 20A PWRDI3333

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,637

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMN3012LFG-13 from Diodes Incorporated is a dual-channel 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type D) package, featuring Q1 with R_DS(ON) = 12 mΩ @ V_GS = 5 V, I_D = 15 A and Q2 with R_DS(ON) = 6 mΩ @ V_GS = 5 V, I_D = 15 A, optimized for synchronous rectification in high-efficiency DC-DC converters.

For engineers reviewing the DMN3012LFG-13 datasheet, DMN3012LFG-13 pinout, DMN3012LFG-13 application, or DMN3012LFG-13 equivalent, key selection criteria include channel asymmetry (Q1/Q2 R_DS(ON) ratio of 2:1), low gate charge (Q_g = 4.7–6.1 nC / 9.7–12.6 nC), and thermal resistance R_θJC = 9.5 °C/W for board-level power density optimization.

Technical Context

This dual MOSFET integrates two discrete N-channel devices-Q1 (higher-threshold, higher-R_DS(ON)) and Q2 (lower-threshold, lower-R_DS(ON))-in a single PowerDI3333-8 (Type D) thermally enhanced package. Its asymmetric design supports primary-side switching and secondary-side synchronous rectification within compact buck or half-bridge topologies.

Q1 exhibits V_GS(TH) = 1.0–2.1 V and C_iss = 650–850 pF; Q2 delivers V_GS(TH) = 0.75–1.15 V and C_iss = 1137–1480 pF, enabling independent gate drive tuning for reduced cross-conduction loss and improved ZVS capability in resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage for 12 V input rail systems with 2× safety margin.
R_DS(ON) Q1 / Q2	12 mΩ / 6 mΩ @ 5 V - Enables <1.8 W conduction loss per channel at 15 A, critical for >95% efficiency in point-of-load converters.
Q_g Q1 / Q2	4.7–6.1 nC / 9.7–12.6 nC - Low total gate charge reduces driver power demand and enables 1–2 MHz switching without excessive gate drive loss.
t_R/t_F	2.7 ns / 2.3 ns (Q1); 3.5 ns / 2.9 ns (Q2) - Fast edge rates minimize overlap loss during dead-time transitions in synchronous rectifiers.
R_θJC	9.5 °C/W - Enables direct heatsinking via exposed die clip, supporting >2.2 W continuous dissipation at T_C = 25 °C.
I_D Continuous	20 A (Q1) / 16 A (Q2) at T_C = 25 °C - Sustains high peak currents in transient load steps without thermal runaway.

Pinout & Package

Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed copper die pad for low R_θJC. Molded green compound, RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	S1/D2 Source/Drain common (Q1)	Low-inductance parallel source connection for Q1; ties to ground or low-side return path.
5	G2 Gate (Q2)	Independent gate terminal for Q2; requires dedicated gate resistor to control dV/dt and prevent shoot-through.
6	D1 Drain (Q1)	High-side switch node; connects to input rail or transformer secondary center-tap in synchronous rectifier.
7	G1 Gate (Q1)	Independent gate terminal for Q1; driven with standard 5 V logic-compatible signal.
8	S2 Source (Q2)	Output-side source node; tied to output capacitor ground; forms synchronous rectifier cathode return.

Key Features

Feature	Design Value
Asymmetric dual-channel architecture	Q1 (20 A, 12 mΩ) + Q2 (16 A, 6 mΩ) enables optimized primary/secondary roles in buck or flyback converters without external component matching.
100% UIS tested	Rated for 34 A (Q1) / 50 A (Q2) unclamped inductive switching-ensures robustness against transformer leakage energy spikes.
Low C_iss/C_rss ratio	Q1: C_iss/C_rss ≈ 54; Q2: C_iss/C_rss ≈ 47-improves Miller immunity and gate drive stability under high dV/dt conditions.
Exposed thermal pad	Integral copper die clip provides 9.5 °C/W junction-to-case path-enables PCB copper pour heatsinking without external thermal vias.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IPC-1752A environmental compliance requirements.

Applications

Server VRM

USB-C PD Adapter

Use Scenario: 48 V to 12 V intermediate bus conversion in rack-mounted servers using multiphase buck topology.

IC Role / Device Role / Timing Role: Q1 operates as high-side switch; Q2 serves as synchronous rectifier in each phase leg, driven by dedicated gate controller.

Use Value: Asymmetric R_DS(ON) minimizes combined conduction loss while maintaining fast turn-off for phase interleaving up to 1 MHz.

Use Scenario: 20 V to 5 V step-down in compact 65 W USB-C power delivery adapters.

IC Role / Device Role / Timing Role: Dual MOSFET replaces discrete high-side/low-side pair in synchronous buck; Q2 handles high-current output path.

Use Value: Integrated layout reduces parasitic inductance, enabling stable operation at 500 kHz with <15 mV output ripple under full load.

Industrial PLC I/O Module

Automotive ADAS Camera Power Supply

Use Scenario: 24 V to 3.3 V/5 V local regulation for isolated digital I/O drivers in programmable logic controllers.

IC Role / Device Role / Timing Role: Q1 switches main input; Q2 performs synchronous rectification with adaptive dead-time control.

Use Value: 150 °C max junction temperature rating ensures reliable operation in sealed enclosures with ambient up to 85 °C.

Use Scenario: 12 V to 1.8 V core supply for image signal processors in automotive surround-view camera modules.

IC Role / Device Role / Timing Role: Q2 functions as low-R_DS(ON) output switch; Q1 used for input current limiting or reverse polarity protection.

Use Value: AEC-Q101 not claimed, but -55 °C to +150 °C operating range supports extended temperature qualification for under-hood applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3012LDG-13	Same die, identical R_DS(ON), Q_g, and SOA-but packaged in PowerDI3333-8 (Type C), differing in leadframe geometry and thermal pad layout.	Type C has larger thermal pad area but non-optimized solder mask opening; Type D offers tighter thermal resistance (R_θJC = 9.5 vs. 10.2 °C/W).	Select DMN3012LFG-13 when PCB layout prioritizes minimal thermal impedance and controlled solder fillet formation.
DMN3025LFG-7	Higher R_DS(ON) (25 mΩ/12 mΩ), lower Q_g (3.8/7.2 nC), same package-trade-off favors lower gate drive loss over conduction loss.	Better suited for lower-current (<10 A), higher-frequency (>2 MHz) applications where switching loss dominates.	Choose DMN3025LFG-7 only if system efficiency modeling shows gate loss > conduction loss at target frequency and load profile.

Compared with DMN3012LDG-13, DMN3012LFG-13 delivers 0.7 °C/W lower R_θJC for improved thermal headroom; versus DMN3025LFG-7, it provides 13 mΩ lower Q1 R_DS(ON)-critical for maintaining <1% voltage drop at 15 A in high-current POL rails.

Availability

DMN3012LFG-13 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, and industrial PLC I/O modules requiring stable component supply across multi-year production cycles.

Supply support for DMN3012LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The PowerDI3333-8 dual MOSFET product line targets high-density power conversion, emphasizing low R_DS(ON), fast switching, and thermally efficient packaging for space-constrained DC-DC applications.

FAQ

What is the maximum continuous drain current for each channel at 70°C case temperature?

At T_C = +70 °C, Q1 supports 16 A continuous drain current and Q2 supports 10 A, as specified in the Absolute Maximum Ratings table. Derating follows linear interpolation between 25 °C (20 A/16 A) and 70 °C values, with thermal limits governed by R_θJC = 9.5 °C/W and P_D = 1.4 W at T_C = 70 °C.

Can DMN3012LFG-13 be used in a synchronous buck converter without external gate resistors?

No. Independent gate terminals (G1, G2) require individual gate resistors to control rise/fall times and suppress ringing. Recommended values are 2.2 Ω for Q1 and 1.5 Ω for Q2 based on t_R/t_F specs and typical 5 V gate drivers; omitting resistors risks shoot-through and EMI due to mismatched edge rates.

Is the exposed thermal pad electrically isolated from internal circuitry?

Yes. The exposed copper die pad is internally connected only to the source terminals (S1/D2 pins 1–4 and S2 pin 8) and is not tied to drain or gate. It must be soldered to a PCB copper pour tied to the source net-no floating or grounded thermal pads-to maintain electrical safety and thermal performance.

Does this part support 3.3 V gate drive for both channels?

Q2 supports full enhancement at V_GS = 3.3 V (typical V_GS(TH) = 0.95 V, max 1.15 V), delivering R_DS(ON) ≤ 7.5 mΩ. Q1 requires ≥4.5 V for reliable turn-on (V_GS(TH) max = 2.1 V); at 3.3 V, R_DS(ON) rises to >35 mΩ-unsuitable for high-current operation.

DMN3012LFG-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerLDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA, 1.15V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.1nC @ 4.5V, 12.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 850pF @ 15V, 1480pF @ 15V

Power - Max:: 2.2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8 (Type D)

DMN3012LFG-13 FAQ

1.How can I place an order for DMN3012LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3012LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3012LFG-13 reliable?

The price and inventory of DMN3012LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3012LFG-13 is usually 5 days.

3.What payment methods are accepted for DMN3012LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3012LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3012LFG-13?

DMN3012LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3012LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3012LFG-13?

For technical support, including DMN3012LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3012LFG-13 requirements.

6.How does Aetrix verify that DMN3012LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMN3012LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3012LFG-13 meets industry standards.

7.What is the process for return or replacement of DMN3012LFG-13?

All DMN3012LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3012LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3012LFG-13 part is unused and in its original packaging.

Return procedure for DMN3012LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…