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Diodes Incorporated DMN3012LFG-7
- Part No.:
- DMN3012LFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerLDFN
- Datasheet:
-
DMN3012LFG-7.pdf
- Description:
- MOSFET 2N-CH 30V 20A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:7,163
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Product details
Overview
DMN3012LFG-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a PowerDI3333-8 (Type D) package, configured as two independent synchronous switches with 30V VDSS, 12mΩ (Q1) and 6mΩ (Q2) RDS(ON) at VGS = 5V/ID = 15A, optimized for high-efficiency DC-DC converter power stages.
For engineers reviewing the DMN3012LFG-7 datasheet, DMN3012LFG-7 pinout, DMN3012LFG-7 application, or DMN3012LFG-7 equivalent, this dual MOSFET supports compact synchronous buck topologies requiring matched gate drive timing, low conduction loss asymmetry, and robust UIS capability in space-constrained industrial and computing power supplies.
Technical Context
This device integrates two discrete N-channel MOSFETs-Q1 (higher RDS(ON), higher threshold) and Q2 (lower RDS(ON), lower VGS(TH))-in a single lead-free PowerDI3333-8 package, enabling synchronous rectification where Q2 serves as the low-side switch and Q1 as the high-side switch under 5V gate drive.
Its design targets high-frequency switching (tR/tF ≤ 3.5ns/2.9ns) with low Ciss (650–1480pF), low Qg (4.7–12.6nC), and integrated body diodes rated for 2.7A (Q1) and 3.2A continuous source current, supporting continuous conduction mode (CCM) operation in point-of-load converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for both channels; enables use in 24V input systems with margin. |
| RDS(ON) Q1 / Q2 | 12mΩ / 6mΩ @ VGS = 5V, ID = 15A - Asymmetric on-resistance supports optimized high-side/low-side loss allocation in synchronous buck designs. |
| VGS(TH) Q1 / Q2 | 1.0–2.1V / 0.75–1.15V - Low, tightly distributed thresholds ensure reliable turn-on with standard 5V logic-level drivers. |
| Qg Q1 / Q2 | 4.7–6.1nC / 9.7–12.6nC - Enables fast switching with minimal driver power loss; Q2's higher Qg matches its lower RDS(ON) trade-off. |
| tR/tF Q1 / Q2 | 2.7ns / 3.5ns rise, 2.3ns / 2.9ns fall - Sub-10ns switching transitions support >1MHz converter operation with reduced switching loss. |
| IAS Q1 / Q2 | 34A / 50A - Rated unclamped inductive switching energy (EAS = 58/125mJ) ensures ruggedness during transient overloads in DC-DC stages. |
| RθJC | 9.5°C/W - Low junction-to-case thermal resistance allows direct heatsinking via exposed die clip in PowerDI3333-8 package. |
Pinout & Package
Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed copper die pad for efficient heat transfer. Dimensions: 3.30 × 3.30 × 0.45 mm (L × W × H), moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | Gate of Q1 (high-side MOSFET) | Independent control terminal for upper switch; requires bootstrap or isolated gate drive in buck topology. |
| Pin 2 (S1/D2) | Source of Q1 / Drain of Q2 (common node) | Internal connection forming half-bridge midpoint; must be routed with low-inductance layout for switching node integrity. |
| Pin 3 (D1) | Drain of Q1 (high-side output) | Connects to input rail; carries full input current and withstands full VIN during Q1 off-state. |
| Pin 4 (G2) | Gate of Q2 (low-side MOSFET) | Ground-referenced gate input; compatible with standard PWM controllers without level-shifting. |
| Pin 5 (S2) | Source of Q2 (low-side return) | Direct connection to power ground plane; critical for minimizing ground bounce and EMI in high-dI/dt paths. |
| Pin 6–8 (Exposed Pad) | Thermal pad / Source of Q2 | Electrically tied to S2; must be soldered to large copper area for thermal management and low-impedance grounding. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric dual-channel integration | Q1 (12mΩ) + Q2 (6mΩ) in one package reduces PCB area by ~40% vs. discrete dual-MOSFET solutions while maintaining optimal RDS(ON) pairing. |
| 100% production UIS tested | Guarantees minimum 34A/50A avalanche current handling per channel-critical for surviving load dump or inductor saturation events. |
| Low Ciss & Crss | Q1: Ciss = 650–850pF, Crss = 12–16pF; Q2: Ciss = 1137–1480pF, Crss = 24–32pF-minimizes Miller-induced shoot-through risk and gate drive loss. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb); matte tin annealed terminals ensure MIL-STD-202 solderability. |
| Thermally optimized PowerDI3333-8 | Exposed die clip lowers RθJC to 9.5°C/W and enables >2.2W continuous dissipation at TC = 25°C-ideal for thermally dense POL modules. |
Applications
| Server VRM Power Stage | Industrial 24V DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2V @ up to 100A per phase) in data center servers. IC Role / Device Role / Timing Role: Q1 acts as high-side synchronous switch; Q2 as low-side switch; both operate in complementary 500kHz–1MHz PWM with dead-time control. Use Value: Asymmetric RDS(ON) minimizes total conduction loss across duty cycle range; low Qg enables efficient 5V gate drive from integrated controller. |
Use Scenario: Isolated or non-isolated 24V-to-5V/3.3V step-down converter powering PLC I/O modules, motor drives, or fieldbus interfaces. IC Role / Device Role / Timing Role: Dual MOSFET implements synchronous rectification in primary-side active clamp or secondary-side synchronous rectifier stage. Use Value: 30V rating accommodates 24V nominal input with surge margin; 150°C max junction temperature ensures reliability in sealed industrial enclosures. |
| USB-C PD Fast Charging | Automotive Body Control Module |
Use Scenario: 20V–28V input buck converter in USB-C Power Delivery adapter delivering 20V@5A or 15V@3A with >95% efficiency. IC Role / Device Role / Timing Role: Q1/Q2 form compact half-bridge for high-frequency (≥600kHz) synchronous rectification in secondary-side regulation. Use Value: Low RDS(ON) reduces conduction loss at high load; fast tR/tF enables tight regulation loop bandwidth and dynamic response. |
Use Scenario: 12V/24V input power management for LED lighting drivers, window lift controllers, or HVAC actuators in automotive BCMs. IC Role / Device Role / Timing Role: Q2 used as low-side load switch; Q1 repurposed as protected high-side switch or reverse-polarity protection element. Use Value: AEC-Q101 not claimed, but -55°C to +150°C operating range and 100% UIS testing meet harsh automotive ambient requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3012LDG | Same die, identical RDS(ON), Qg, and SOA specs; differs only in tape-and-reel packaging (3000 pcs vs. 1000 pcs). | No functional difference; suitable for same circuits but optimized for higher-volume automated assembly. | Select DMN3012LDG when procurement volume exceeds 3k units and reel changeover time is critical in SMT line planning. |
| DMN3025LFG-7 | Higher RDS(ON): 25mΩ/12.5mΩ; lower Qg: 3.2nC/6.5nC; same package and pinout. | Better suited for lower-current (<10A), cost-sensitive applications where thermal headroom is less constrained. | Choose DMN3025LFG-7 if system peak current is ≤10A and BOM cost reduction outweighs 1.8× conduction loss increase at full load. |
Compared with DMN3012LFG-7, DMN3012LDG offers identical electrical performance with higher reel quantity, while DMN3025LFG-7 trades higher RDS(ON) for lower gate charge and cost-making it viable only below 10A continuous load where thermal derating is acceptable.
Availability
DMN3012LFG-7 is available at Aetrix Electronics and suitable for server VRMs, industrial 24V DC-DC converters, and USB-C PD fast charging applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for DMN3012LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection devices for industrial, computing, and consumer markets.
The DMN3012LFG belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density synchronous buck converters in computing and industrial power supplies where thermal performance and switching fidelity are critical.
FAQ
Is DMN3012LFG-7 qualified for automotive applications?
No-DMN3012LFG-7 is not AEC-Q101 qualified. While it operates from −55°C to +150°C and passes 100% UIS testing, Diodes Incorporated does not certify it for automotive use. For automotive body electronics, consider the AEC-Q101-qualified DMN3025LFGQ-7 or similar qualified alternatives.
Can DMN3012LFG-7 be used in a standalone high-side switch configuration?
Yes-Q1 can function as an independent high-side switch, but requires a gate drive voltage ≥ VIN + VGS(TH). Its 2.1V max VGS(TH) and 30V VDSS support 24V rail switching with appropriate bootstrap or charge-pump gate driver circuitry.
What is the maximum recommended continuous drain current for Q1 and Q2?
At TC = 25°C, Q1 supports 20A and Q2 supports 16A continuous drain current. At TC = 70°C, these derate to 16A and 12A respectively. Actual usable current depends on PCB copper area, airflow, and thermal interface to the exposed pad.
Does the exposed thermal pad require electrical isolation from ground?
No-the exposed pad is internally connected to Pin 5 (S2), the source of Q2. It must be soldered to a grounded copper pour for both thermal and electrical performance. No dielectric layer or isolation is needed or recommended.
DMN3012LFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerLDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA, 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1nC @ 4.5V, 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 850pF @ 15V, 1480pF @ 15V
- Power - Max:
- 2.2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type D)
DMN3012LFG-7 FAQ
1.How can I place an order for DMN3012LFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3012LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3012LFG-7 reliable?
The price and inventory of DMN3012LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3012LFG-7 is usually 5 days.
3.What payment methods are accepted for DMN3012LFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3012LFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3012LFG-7?
DMN3012LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3012LFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3012LFG-7?
For technical support, including DMN3012LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3012LFG-7 requirements.
6.How does Aetrix verify that DMN3012LFG-7 is sourced from the original manufacturer or authorized distributors?
All DMN3012LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3012LFG-7 meets industry standards.
7.What is the process for return or replacement of DMN3012LFG-7?
All DMN3012LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3012LFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3012LFG-7 part is unused and in its original packaging.
Return procedure for DMN3012LFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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