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Diodes Incorporated DMN3013LDG-13
- Part No.:
- DMN3013LDG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerLDFN
- Datasheet:
-
DMN3013LDG-13.pdf
- Description:
- MOSFET 2N-CH 30V 9.5A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:8,191
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Product details
Overview
DMN3013LDG-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a PowerDI3333-8 (Type D) package, designed for synchronous rectification and high-efficiency DC-DC conversion. It features 30V VDSS, 14.3mΩ RDS(ON) at VGS = 8V/ID = 4A per channel, and 100% production-tested UIS capability-enabling robust operation in compact power management circuits such as USB-C PD adapters and point-of-load regulators.
For engineers reviewing the DMN3013LDG-13 datasheet, DMN3013LDG-13 pinout, DMN3013LDG-13 application, or DMN3013LDG-13 equivalent, this dual MOSFET supports precise gate-drive timing in synchronous buck topologies, delivers low conduction loss at 4.5V logic-level drive, and meets RoHS 3, halogen-free, and green compound requirements for industrial and consumer power systems.
Technical Context
This device integrates two matched N-channel MOSFETs in a single thermally enhanced PowerDI3333-8 package with shared source terminals and independent gate/drain connections. Its low RDS(ON) and optimized gate charge (QG = 5.7nC max at VGS = 4.5V) enable high-frequency switching up to 1MHz while minimizing both conduction and switching losses.
The MOSFET pair exhibits identical electrical characteristics: VGS(TH) = 0.75–1.2V, Ciss = 600pF max, and tR/tF ≤ 6.7ns/2.2ns-supporting fast transition control in synchronous rectifier configurations where body diode recovery (tRR = 11.8ns, QRR = 7.8nC) must be tightly managed to reduce shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Supports input rails up to 24V nominal with 25% safety margin in industrial DC-DC converters. |
| RDS(ON) (Q1/Q2) | 14.3mΩ @ VGS = 8V, ID = 4A - Enables <170mW conduction loss per channel at 4A, critical for thermal-limited PCB layouts. |
| QG | 5.7nC max @ VGS = 4.5V - Allows full turn-on with <1.2µs gate drive time using 5Ω driver, reducing switching loss in 500kHz+ designs. |
| tRR | 11.8ns - Minimizes reverse recovery energy dissipation during synchronous rectification, lowering EMI and improving efficiency over Schottky alternatives. |
| TJ Range | −55°C to +150°C - Qualified for under-hood automotive auxiliary supplies and industrial motor control gate drivers. |
| RθJA | 58.8°C/W - Achieves 2.16W power dissipation on FR-4 with 1-inch² copper pad, enabling compact 2-layer board implementation. |
| Ciss | 600pF max - Reduces Miller effect-induced gate oscillation risk when driven by standard PWM controllers like TI UCC28911. |
Pinout & Package
Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed die clip for improved heat transfer. Dimensions: 3.30mm × 3.30mm × 1.20mm (L×W×H), moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (Q1 & Q2 common) | Internally tied source nodes-must be connected to power ground plane for optimal thermal and EMI performance. |
| 5 | Gate (Q1) | Independent gate input for first MOSFET; requires dedicated gate resistor to suppress ringing in high-dV/dt environments. |
| 6 | Drain (Q1) | High-side switch node in synchronous buck; routed away from sensitive analog traces to avoid coupling. |
| 7 | Gate (Q2) | Independent gate input for second MOSFET; phase-shifted drive enables interleaved operation in dual-phase converters. |
| 8 | Drain (Q2) | Low-side synchronous rectifier node; benefits from Kelvin-source layout to minimize current-sense error. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees ruggedness against inductive load transients without external snubbers in motor drive H-bridges. |
| Low RDS(ON) at 4.5V | 16.1mΩ max enables direct interface with 3.3V/5V microcontroller GPIOs without level-shifting circuitry. |
| Green compound (halogen/antimony-free) | Meets IPC-1752A Class 2 reporting requirements and eliminates corrosive gas emission during reflow or field failure. |
| Fast tR/tF | 6.7ns/2.2ns rise/fall times support ZVS/ZCS soft-switching schemes in resonant LLC converters. |
| Matched dual channels | Q1/Q2 parameter spread <5% ensures balanced current sharing in parallel-output DC-DC modules without current-balancing resistors. |
Applications
| USB-C Power Delivery Adapter | Industrial PLC Power Supply |
|---|---|
|
Use Scenario: 20V/3A output stage in compact 30W USB-C PD adapter with synchronous buck controller. IC Role / Device Role / Timing Role: Dual MOSFET operates as high-side main switch and low-side synchronous rectifier, replacing discrete diode + MOSFET pair. Use Value: Reduces conduction loss by 42% vs. Schottky solution, enabling >94% peak efficiency and eliminating heatsink requirement. |
Use Scenario: 5V/10A auxiliary rail in programmable logic controller with tight thermal envelope. IC Role / Device Role / Timing Role: Configured as paralleled dual-channel switch to handle 10A load with derated RDS(ON) and shared thermal path. Use Value: Delivers 2.16W total dissipation within 58.8°C/W θJA, meeting 70°C case temperature limit without forced air. |
| Automotive Body Control Module | Wireless Charging Transmitter |
|
Use Scenario: 12V-to-5V buck converter powering CAN transceiver and microcontroller in BCM. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in 250kHz fixed-frequency buck, driven by integrated controller's complementary outputs. Use Value: Survives −40°C cold-crank (6.5V input) and 16V load-dump (ISO 7637-2) due to 30V VDSS and 24A IAS avalanche rating. |
Use Scenario: Half-bridge in 125kHz wireless power transmitter driving 15µH series-resonant tank. IC Role / Device Role / Timing Role: Q1 and Q2 serve as complementary switches with dead-time controlled by TI BQ500212A, leveraging matched tR/tF. Use Value: Low QGD/QGS ratio (1.0) minimizes shoot-through risk during dead-time transitions, improving system reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3016LSD-13 | RDS(ON) = 16.5mΩ @ 4.5V (vs. 16.1mΩ); higher Ciss (650pF); same PowerDI3333-8 package. | Slightly lower efficiency at light loads due to higher gate charge; identical thermal footprint. | Select when cost sensitivity outweighs 0.3% efficiency gain at full load in non-thermal-limited designs. |
| SI6926ADQ-T1-GE3 | Single-channel dual-MOSFET (not matched pair); RDS(ON) = 15.5mΩ @ 4.5V; different SO-8 package (higher RθJA = 62°C/W). | Requires separate gate routing and lacks internal source tie; less suitable for space-constrained synchronous rectifiers. | Prefer only if existing SO-8 footprint reuse is mandatory and thermal margin exceeds 5°C. |
Compared with DMN3013LDG-13, DMN3016LSD-13 trades marginal RDS(ON) increase for broader availability, while SI6926ADQ-T1-GE3 sacrifices matching and thermal performance for legacy package compatibility-making DMN3013LDG-13 optimal for new designs prioritizing efficiency, size, and ruggedness.
Availability
DMN3013LDG-13 is available at Aetrix Electronics and suitable for USB-C PD adapters, industrial PLC power supplies, and automotive body control modules requiring stable component supply across multi-year production cycles.
Supply support for DMN3013LDG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers in Asia, Europe, and the US, and manufacturing in Taiwan and China.
The DMN3013LDG-13 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and automotive applications where thermal performance and switching fidelity are critical.
FAQ
What is the maximum continuous drain current per channel at 70°C case temperature?
The DMN3013LDG-13 supports 12A continuous drain current per channel at TC = +70°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1-inch² 2oz copper) and accounts for thermal derating above 25°C ambient. At TC = +25°C, the rating increases to 15A per channel.
Does the device require external gate resistors for stable operation?
Yes-external gate resistors (typically 2–10Ω) are required to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The datasheet specifies tD(ON) and tR test conditions with RG = 2Ω, confirming that uncontrolled gate drive can lead to overshoot, shoot-through, or EMI issues in high-speed switching.
Can DMN3013LDG-13 be used in linear regulator applications?
No-it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) curves (Figures 23–24) show limited DC capability (≤0.5A at 10V VDS) and rapid thermal compression beyond 10ms pulses. Its design targets switching applications only; use dedicated LDOs or linear pass transistors instead.
Is the PowerDI3333-8 (Type D) package compatible with standard SO-8 reflow profiles?
Yes-the PowerDI3333-8 uses matte tin annealed terminations and complies with J-STD-020 moisture sensitivity Level 1, allowing standard Pb-free reflow profiles (peak 260°C). However, its exposed die clip requires solder paste coverage matching Diodes' recommended pad layout (X2 = 2.400mm, Y2 = 1.390mm) to ensure mechanical strength and thermal performance.
DMN3013LDG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerLDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs:
- 14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600pF @ 15V
- Power - Max:
- 2.16W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type D)
DMN3013LDG-13 FAQ
1.How can I place an order for DMN3013LDG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3013LDG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3013LDG-13 reliable?
The price and inventory of DMN3013LDG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3013LDG-13 is usually 5 days.
3.What payment methods are accepted for DMN3013LDG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3013LDG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3013LDG-13?
DMN3013LDG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3013LDG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3013LDG-13?
For technical support, including DMN3013LDG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3013LDG-13 requirements.
6.How does Aetrix verify that DMN3013LDG-13 is sourced from the original manufacturer or authorized distributors?
All DMN3013LDG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3013LDG-13 meets industry standards.
7.What is the process for return or replacement of DMN3013LDG-13?
All DMN3013LDG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3013LDG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3013LDG-13 part is unused and in its original packaging.
Return procedure for DMN3013LDG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3013LDG-13 Tags
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