Diodes Incorporated DMN3013LDG-7

Overview

DMN3013LDG-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type D) package, rated for 30V V_DSS, 14.3mΩ R_DS(ON) at V_GS = 8V/ID = 4A per channel, and 100% production-tested UIS capability-designed for synchronous rectification in high-efficiency DC-DC converters.

For engineers reviewing the DMN3013LDG-7 datasheet, DMN3013LDG-7 pinout, DMN3013LDG-7 application, or DMN3013LDG-7 equivalent, key selection criteria include dual-channel R_DS(ON) matching, low gate charge (Q_G = 3.3–5.7nC), thermal resistance (R_θJA = 58.8°C/W), and PowerDI3333-8 footprint compatibility with space-constrained power stages.

Technical Context

This dual MOSFET integrates two matched N-channel devices in a single thermally enhanced PowerDI3333-8 package with exposed die clip for low R_θJC (6.9°C/W). Each channel supports 30V breakdown and operates down to V_GS(TH) = 0.75V, enabling 3.3V logic-level drive.

Its dynamic parameters-including C_iss = 387–600pF, C_rss = 10.4–16pF, and t_R/t_F < 7ns/2.2ns-support high-frequency switching up to 1MHz while minimizing switching losses in buck and synchronous boost topologies.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed copper die pad (pin 1 marked by notch/green dot).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3013LDG-7, DMN3016LSD-7 trades 1.8mΩ higher R_DS(ON) for broader 4.5V drive compatibility, while DMN3022LSD-7 sacrifices 5V headroom for marginally lower gate charge-neither matches the original's 30V/14.3mΩ balance at 8V drive.

Availability

DMN3013LDG-7 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and industrial motor drivers requiring stable component supply and RoHS-compliant packaging.

Supply support for DMN3013LDG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

The DMN3013LDG-7 belongs to Diodes' PowerMOS™ dual-FET product line, engineered specifically for high-density, high-efficiency synchronous rectification in compact DC-DC and battery-powered systems.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

At T_A = +70°C, the continuous drain current is 7.6A per channel (Q1 and Q2), derated from 9.5A at 25°C per the datasheet's thermal limits. This assumes operation on a standard FR-4 board with 2oz copper and 1-inch square copper plate per JEDEC JESD51-2.

Does DMN3013LDG-7 support 3.3V logic-level gate drive?

Yes-its gate threshold voltage V_GS(TH) is specified from 0.75V to 1.2V, and R_DS(ON) remains 15.3–17.7mΩ at V_GS = 3.5V/ID = 4A. However, full 14.3mΩ performance requires ≥4.5V drive; 3.3V systems should verify conduction loss at target load.

How is thermal performance affected by the exposed die pad?

The exposed die pad (pin 7) provides direct thermal path to PCB copper, lowering R_θJA from 58.8°C/W (no pad) to ~34°C/W for t<10s pulses. For continuous operation, soldering the pad to ≥1in² 2oz copper significantly improves steady-state power handling beyond the 2.16W rating.

Are Q1 and Q2 electrically isolated within the package?

Q1 and Q2 share no internal connection-their sources, gates, and drains are fully independent. Pin 1 is Q1 source, pin 2 is Q2 source, pin 3 is Q1 gate, pin 4 is Q2 gate, pins 5–6 are respective drains, and pin 7 is the common thermal pad (not electrically tied to either channel unless externally connected).