Diodes Incorporated DMN3013LFG-7

Overview

DMN3013LFG-7 from Diodes Incorporated is a dual-channel 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type D) package, designed for synchronous rectification and high-efficiency DC-DC conversion. It delivers R_DS(ON) of 14.3 mΩ at V_GS = 8V/ID = 4A per channel, supports 15 A continuous drain current (T_C = 25°C), and features low input capacitance (C_iss = 387–600 pF) for fast switching in compact power management circuits.

For engineers reviewing the DMN3013LFG-7 datasheet, DMN3013LFG-7 pinout, DMN3013LFG-7 application, or DMN3013LFG-7 equivalent, this dual N-channel MOSFET is selected for space-constrained, high-current synchronous buck converters where thermal performance (R_θJA = 58.8°C/W), avalanche ruggedness (E_AS = 28 mJ), and gate drive compatibility with 3.3V/4.5V logic are critical design factors.

Technical Context

This device integrates two matched N-channel MOSFETs in a single PowerDI3333-8 (Type D) thermally enhanced package with exposed die clip. Each channel operates independently with identical maximum ratings: 30V V_DSS, 10V V_GSS, and 24A I_AS avalanche current.

The dual configuration enables synchronous rectification in buck topologies without external pairing, while its low Q_g (3.3–5.7 nC at V_GS = 4.5V) and fast switching times (t_D(ON) = 4.2–6.3 ns, t_F = 2.0–2.2 ns) reduce switching losses under PWM control at frequencies up to several MHz.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed copper die pad for low R_θJC = 6.9°C/W. Dimensions: 3.30 × 3.30 × 1.20 mm (L × W × H), 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3016LFG-7, DMN3013LFG-7 offers lower R_DS(ON) for improved efficiency at medium frequencies; versus DMN3022LFG-7, it trades higher C_iss for significantly lower conduction loss - making it optimal for thermally constrained, high-current DC-DC stages below 1.5 MHz.

Availability

DMN3013LFG-7 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and RoHS 3-compliant sourcing.

Supply support for DMN3013LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

DMN3013LFG-7 belongs to Diodes' PowerDI®3333-8 dual-MOSFET product line, engineered specifically for high-efficiency, space-constrained synchronous buck and half-bridge converters in computing, industrial, and automotive power systems.

FAQ

What is the maximum safe operating junction temperature for DMN3013LFG-7?

The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A108. Continuous operation at this limit requires thermal design ensuring T_J ≤ 150°C under worst-case ambient and power dissipation - typically achieved using ≥1 inch² 2 oz copper pad per device with thermal vias to inner layers.

Can DMN3013LFG-7 be used in a common-source dual configuration for bidirectional current control?

No - the internal structure ties both drains to the exposed pad and separates sources into two independent terminals (pins 1–4 and 5–8). It is not configured for back-to-back source-series operation; each channel must be used with its own drain (shared pad) and source (dedicated pins), limiting use to synchronous rectification or parallel low-side switching.

Is the gate threshold voltage (V_GS(TH)) tightly distributed across production lots?

Yes - V_GS(TH) is specified as 0.75–1.2 V at I_D = 250 μA, with typical value 0.95 V. Production testing ensures <150 mV lot-to-lot variation, enabling reliable turn-on with 3.3V microcontroller GPIOs without external level shifting.

Does the PowerDI3333-8 (Type D) package require special stencil design for reflow soldering?

Yes - the exposed drain pad (bottom) demands a 7×7 array of 0.3 mm diameter solder paste apertures with 0.4 mm spacing, per Diodes' recommended land pattern (X4 = 3.500 mm, Y4 = 3.600 mm). Omitting thermal vias or undersizing the pad causes solder voiding and thermal derating beyond 1.25 W.