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Diodes Incorporated DMN3015LSD-13
- Part No.:
- DMN3015LSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN3015LSD-13.pdf
- Description:
- MOSFET 2N-CH 30V 8.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:315
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Product details
Overview
DMN3015LSD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V V(BR)DSS, 15mΩ RDS(on) @ 10V VGS, and 8.4A continuous drain current at +25°C. It delivers low conduction loss and fast switching for synchronous rectification in compact DC-DC converters.
For engineers reviewing the DMN3015LSD-13 datasheet, DMN3015LSD-13 pinout, DMN3015LSD-13 application, or DMN3015LSD-13 equivalent, key selection criteria include dual-channel RDS(on) matching, SO-8 thermal performance under pulsed load, gate charge (Qg = 25.1nC @ 10V), and AEC-Q101 qualification for automotive power management.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single SO-8 footprint, enabling half-bridge or dual-switch topologies without inter-device parameter mismatch. Its 14.5°C/W RθJC and 78°C/W steady-state RθJA (with 1-inch² copper) support thermally constrained PCB layouts.
The device features 1.3–2.5V gate threshold (VGS(TH)), 11.3nC total gate charge at 4.5V, and 8.5ns body diode reverse recovery time - optimized for high-frequency (>500kHz) buck converters where shoot-through risk and conduction loss must both be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30V - Maximum blocking voltage before avalanche; sets upper limit for input rail in 24V industrial DC-DC stages. |
| RDS(on) max | 15mΩ @ 10V VGS - Enables ≤125mW conduction loss at 8.4A, critical for >95% efficiency in 12V→5V/3.3V point-of-load converters. |
| ID (continuous) | 8.4A @ TA=+25°C - Sustains full-load current in dual-phase synchronous buck with shared thermal mass. |
| Qg (total) | 25.1nC @ 10V - Determines gate driver power requirement and switching loss at 1MHz; enables use with low-current drivers like ZXGD3101. |
| trr / Qrr | 8.5ns / 7.0nC - Minimizes body diode recovery loss during dead-time in half-bridge operation, reducing EMI and cross-conduction risk. |
| TJ range | −55°C to +150°C - Supports under-hood automotive environments and industrial enclosures without derating below −40°C ambient. |
| AEC-Q101 | Qualified - Validated for automotive powertrain and body electronics per stress test requirements (HTOL, TC, HTRB). |
Pinout & Package
Package: SO-8 (standard 8-lead small-outline integrated circuit), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Controls first N-MOSFET; requires ≥2.5V to fully enhance; referenced to S1 for local drive loop stability. |
| D1 | Drain of Channel 1 | High-side switch node in half-bridge; connects to input rail; shares thermal pad with D2 in SO-8 layout. |
| S1 | Source of Channel 1 | Return path for Channel 1; tied to power ground or floating node depending on topology (e.g., synchronous buck low-side). |
| S2 | Source of Channel 2 | Independent source terminal; enables dual independent switches or complementary drive when S1/S2 are isolated. |
| D2 | Drain of Channel 2 | Second high-side node; electrically isolated from D1 but thermally coupled via common leadframe and exposed pad. |
| G2 | Gate of Channel 2 | Independent gate control; allows asymmetric timing or separate PWM inputs for phase-shifted topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual-channel RDS(on) | ≤15mΩ per channel @ 10V - Ensures balanced current sharing in parallel or interleaved configurations without external balancing resistors. |
| Low Crss (82pF) | Reduces Miller-induced turn-on risk during high dv/dt switching, improving noise immunity in motor gate-drive applications. |
| 1.2W PD (FR-4, min pad) | Supports 1.6A continuous current in space-constrained consumer power modules without heatsink or forced air. |
| Halogen- & antimony-free | <900ppm Br, <900ppm Cl, <1000ppm Sb - Meets IPC-1752A Tier 2 reporting requirements for green electronics compliance. |
| Body diode VF | 0.7V typ @ 1A - Low forward drop reduces reverse-recovery energy in asynchronous flyback or boost converters. |
Applications
| Automotive Body Control Module | Industrial DC-DC Point-of-Load |
|---|---|
|
Use Scenario: Driving dual solenoid valves or LED matrix backlighting in headlamp control units with 12V battery input. IC Role / Device Role / Timing Role: Dual low-side switch replacing discrete transistors; operates in PWM mode at 200Hz–2kHz with <100ns dead-time control. Use Value: 15mΩ RDS(on) limits self-heating to <1.1W at 8A peak, eliminating need for thermal vias in 2-layer PCB designs. |
Use Scenario: Synchronous rectification in 48V→12V intermediate bus converter for factory automation PLCs. IC Role / Device Role / Timing Role: Dual N-channel switch implementing active clamp and synchronous rectifier in non-isolated buck-boost stage. Use Value: Matched channels ensure <±3% current imbalance across 500kHz switching, maintaining output regulation within ±1.5% over temperature. |
| Laptop USB-C Power Delivery | Smartphone Fast Charging Circuit |
|
Use Scenario: Dual-path power routing for USB-C port negotiation and 20V/3A PD sink capability in ultrabook mainboard. IC Role / Device Role / Timing Role: Dual-channel load switch controlling VBUS and CC line power sequencing with independent enable logic. Use Value: 8.4A rating supports 65W PD3.0 delivery; SO-8 footprint fits tight 3mm × 4mm routing zones near connector. |
Use Scenario: Dual-stage battery charging path selection between wall adapter and wireless receiver in dual-input smartphone PMIC. IC Role / Device Role / Timing Role: Independent high-side switches isolating charger IC inputs; driven by PMIC GPIO with <1µs propagation delay. Use Value: 1.3–2.5V VGS(TH) ensures reliable turn-on from 1.8V I/O rails; 7.7A rating at 4.5V supports 30W fast-charge burst modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Higher RDS(on): 25mΩ @ 10V; same SO-8, AEC-Q101, 30V rating | Lower efficiency in high-current DC-DC; acceptable for <5A loads or cost-sensitive automotive modules | Select when thermal budget allows higher conduction loss and BOM cost reduction is prioritized over peak efficiency. |
| SI7850DP-T1-GE3 | Dual N-channel, 30V, 12mΩ @ 10V, but only qualified to JESD22-A110 (not AEC-Q101); different pinout (G1/D1/S1/S2/G2/D2 order) | Not suitable for automotive; requires PCB redesign due to non-interchangeable pin mapping | Choose for industrial/commercial systems needing lower RDS(on) where automotive qualification is unnecessary and layout revision is feasible. |
Compared with DMN3015LSD-13, DMN3025LSD-13 trades 10mΩ higher on-resistance for lower unit cost, while SI7850DP-T1-GE3 offers better conduction loss but lacks automotive qualification and demands board-level rework - making DMN3015LSD-13 the optimal balance of performance, reliability, and drop-in compatibility in AEC-Q101 designs.
Availability
DMN3015LSD-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and USB-C power delivery systems requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN3015LSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Shanghai and Chengdu.
The DMN3015LSD-13 belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power conversion in automotive and industrial applications where AEC-Q101 reliability and SO-8 thermal performance are mandatory.
FAQ
What is the maximum safe operating junction temperature for DMN3015LSD-13?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across −55°C to +150°C. Thermal design must ensure TJ remains ≤150°C under worst-case ambient and power dissipation conditions; transient thermal resistance data (Figure 12) supports pulse-width-based derating analysis.
Can DMN3015LSD-13 be used in a half-bridge configuration with bootstrap gate drive?
Yes - its 30V V(BR)DSS and 20V VGSS rating allow direct use with standard 12V bootstrap supplies. The matched dual-channel structure supports complementary switching, and the 82pF Crss minimizes unintended turn-on during high dv/dt transitions typical in half-bridge operation.
Is the SO-8 package thermally enhanced or does it require an exposed pad?
No - the standard SO-8 package uses a molded plastic body with internal copper leadframe; it has no exposed thermal pad. Thermal performance relies on PCB copper area: 102°C/W RθJA is specified for minimum recommended pad layout, while 78°C/W assumes 1-inch² copper pour per JEDEC standards.
Does DMN3015LSD-13 support logic-level gate drive at 3.3V?
No - its VGS(TH) range is 1.3–2.5V, but RDS(on) rises sharply below 4.5V: 18mΩ @ 4.5V vs. unspecified at 3.3V. At 3.3V, conduction loss exceeds 3× nominal, risking thermal runaway above 3A. Use only with ≥4.5V gate drive or add level-shifting circuitry.
DMN3015LSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 8.4A (Ta)
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1415pF @ 15V
- Power - Max:
- 1.2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN3015LSD-13 FAQ
1.How can I place an order for DMN3015LSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3015LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3015LSD-13 reliable?
The price and inventory of DMN3015LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3015LSD-13 is usually 5 days.
3.What payment methods are accepted for DMN3015LSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3015LSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3015LSD-13?
DMN3015LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3015LSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3015LSD-13?
For technical support, including DMN3015LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3015LSD-13 requirements.
6.How does Aetrix verify that DMN3015LSD-13 is sourced from the original manufacturer or authorized distributors?
All DMN3015LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3015LSD-13 meets industry standards.
7.What is the process for return or replacement of DMN3015LSD-13?
All DMN3015LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3015LSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3015LSD-13 part is unused and in its original packaging.
Return procedure for DMN3015LSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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