Diodes Incorporated DMN3016LDN-13

Overview

DMN3016LDN-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN3030-8 package, rated for 30V V_DS, 20 mΩ R_DS(ON) @ 10V V_GS, and 7.3A continuous drain current at 25°C. It integrates two matched low-R_DS(ON) switches optimized for synchronous rectification and half-bridge configurations in compact DC motor control and DC-AC inverter stages.

For engineers reviewing the DMN3016LDN-13 datasheet, DMN3016LDN-13 pinout, DMN3016LDN-13 application, or DMN3016LDN-13 equivalent, key selection criteria include its dual-channel thermal coupling, 4.5V logic-level gate drive compatibility, 1415 pF C_iss, and 13.5°C/W R_θJC for high-density power stage layout.

Technical Context

This dual MOSFET implements two independent N-channel silicon devices sharing a common thermally efficient DFN package with exposed drain pads. Its gate threshold voltage (1.4–2.0 V) enables robust turn-on with 3.3V/5V microcontroller outputs, while fast switching (t_r = 16.5 ns, t_f = 5.6 ns) and low Q_gd/Q_gs ratio support high-frequency PWM operation up to 500 kHz.

The device features integrated body diodes with 12.3 ns reverse recovery time and 10.4 nC Q_rr, supporting synchronous rectification without external Schottky diodes. Its R_DS(ON) remains stable across –55°C to +150°C junction temperature, with <1.8× variation at V_GS = 4.5V per Figure 6.

Key Specifications

Pinout & Package

Package: V-DFN3030-8 (3.0 × 3.0 × 0.8 mm), thermally enhanced with dual exposed drain pads (D1/D2) and symmetric pinout for balanced current sharing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3016LDN-13, DMN3026LSD-13 trades 30% higher conduction loss for lower unit cost, while SI6926ADQ-T1-GE3 improves R_DS(ON) matching by 2× at the expense of 17% higher gate charge-making DMN3016LDN-13 optimal for high-frequency, thermally constrained 24V motor drives.

Availability

DMN3016LDN-13 is available at Aetrix Electronics and suitable for DC motor control, DC-AC inverters, USB-C power delivery, and LED driver dimming requiring stable component supply and consistent parametric performance across production lots.

Supply support for DMN3016LDN-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for industrial, computing, and consumer markets.

The DMN3016LDN belongs to Diodes' "PowerMOS" product line, engineered specifically for space-constrained, high-switching-frequency power conversion where thermal density and gate drive simplicity are critical design constraints.

FAQ

What is the maximum safe operating junction temperature for DMN3016LDN-13?

The absolute maximum junction temperature is +150°C per the datasheet's Thermal Characteristics table. Operation above this limit risks permanent degradation of the silicon die and bond wires. Derating is required above +125°C ambient; thermal design must maintain T_J ≤ 140°C under worst-case load to ensure 10-year reliability per JEDEC JEP47.

Can DMN3016LDN-13 be used in a synchronous buck converter as both high-side and low-side switches?

No-DMN3016LDN-13 contains two N-channel MOSFETs only and lacks an integrated bootstrap circuit or level-shifter. It can serve as the low-side switch or as dual low-side switches in multiphase converters, but a separate high-side driver IC (e.g., Diodes AP2123) is required for high-side N-MOSFET control in buck topologies.

Is the V-DFN3030-8 package compatible with standard reflow profiles for lead-free soldering?

Yes-the package meets IPC/JEDEC J-STD-020 moisture sensitivity Level 1 and is qualified for peak reflow temperatures up to 260°C. The recommended profile uses ramp rates ≤3°C/s, preheat (150–200°C for 60–120 s), soak (200–220°C for 60–120 s), and peak (235–245°C for 20–40 s) per Diodes' AP02002 packaging specification.

Does DMN3016LDN-13 require external gate resistors for stable switching?

Yes-gate resistors are mandatory to dampen ringing caused by parasitic inductance in PCB traces. A 2.2–4.7Ω resistor in series with each gate (G1/G2) is recommended to limit dV/dt to <5 V/ns and prevent false triggering, especially when driving inductive loads like motors or transformers.