Diodes Incorporated DMN3016LDN-7

Overview

DMN3016LDN-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN3030-8 package, rated for 30V V_DS, 20 mΩ R_DS(ON) @ 10V V_GS, and 7.3A continuous drain current at +25°C. It integrates two matched low-R_DS(ON) switches optimized for high-efficiency DC motor control and DC-AC inverter stages.

For engineers reviewing the DMN3016LDN-7 datasheet, DMN3016LDN-7 pinout, DMN3016LDN-7 application, or DMN3016LDN-7 equivalent, key selection criteria include dual-channel thermal coupling, 4.5V logic-level gate drive compatibility, body diode recovery performance (t_RR = 12.3 ns), and JEDEC Level-1 moisture sensitivity rating for standard SMT assembly.

Technical Context

This dual MOSFET uses planar trench-gate technology to achieve simultaneous low on-resistance and fast switching. Each channel supports independent gate control with matched threshold voltage (1.4–2.0 V) and exhibits tightly coupled thermal behavior due to monolithic die integration in a thermally enhanced DFN package.

It delivers 24 mΩ R_DS(ON) at 4.5V V_GS with 11.3 nC total gate charge (V_GS = 4.5V), enabling efficient operation in synchronous buck and half-bridge topologies. The integrated body diodes show 0.70–1.0 V forward voltage at 1 A, with 10.4 nC reverse recovery charge under 500 A/μs di/dt conditions.

Key Specifications

Pinout & Package

Package: V-DFN3030-8 (3.0 × 3.0 × 0.8 mm), thermally enhanced with exposed thermal pad (pin 5). Molded green compound, UL 94V-0 rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3016LDN-7, DMN3016LSD-7 trades thermal performance for through-hole compatibility, while SI6926ADQ-T1-GE3 prioritizes gate charge reduction over on-resistance-making the DMN3016LDN-7 optimal for 100–300 kHz motor control where both conduction and switching losses matter.

Availability

DMN3016LDN-7 is available at Aetrix Electronics and suitable for DC motor control, DC-AC inverters, and power OR-ing circuits requiring stable component supply, consistent parametric binning, and RoHS-compliant green packaging.

Supply support for DMN3016LDN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMN3016LDN-7 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power conversion in battery-operated and industrial equipment.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The DMN3016LDN-7 has a rated junction temperature range of –55°C to +150°C. At +70°C ambient, its continuous drain current drops to 5.8 A (V_GS = 10 V) due to thermal derating governed by R_θJA = 78 °C/W. This reflects real-world PCB thermal design limits-not just silicon capability-and must be validated using the transient thermal resistance curve (Figure 12) for pulsed loads.

Can the two channels be operated with different gate drive voltages or timing?

Yes-G1 and G2 are fully independent terminals with identical electrical specifications. Each gate accepts 0–20 V drive, supports separate PWM signals, and exhibits matched propagation delays (t_D(ON) = 4.8 ns, t_D(OFF) = 26.1 ns). No internal connection exists between gates or sources, enabling asymmetric half-bridge or phase-shifted control schemes.

Is the thermal pad (pin 5) electrically connected to any internal node?

No-the exposed thermal pad (pin 5) is electrically isolated and intended solely for thermal conduction to the PCB. It must be soldered to a dedicated copper pour with thermal vias; connecting it to ground or any signal net violates the device's isolation integrity and may cause latch-up or premature failure.

How does the body diode performance compare to discrete Schottky diodes in flyback applications?

The integrated body diode has V_SD = 0.70–1.0 V at 1 A and t_RR = 12.3 ns, outperforming most 30V Schottkys in reverse recovery but with higher forward drop than ultra-low-V_F alternatives. Its advantage lies in co-packaged matching and reduced layout parasitics-not raw diode specs-making it optimal for synchronous rectification where gate timing alignment is critical.