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Diodes Incorporated DMN3016LDV-13
- Part No.:
- DMN3016LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN3016LDV-13.pdf
- Description:
- MOSFET 2N-CH 21A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:6,787
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Product details
Overview
DMN3016LDV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UXC) package, rated for 30V VDSS, 12 mΩ RDS(ON) @ 10V VGS, and 21A continuous drain current at TC = +25°C. It delivers low on-resistance and fast switching for high-efficiency power management in compact DC-DC converters and load-switching circuits.
For engineers reviewing the DMN3016LDV-13 datasheet, DMN3016LDV-13 pinout, DMN3016LDV-13 application, or DMN3016LDV-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at 4.5V/10V drive, thermal resistance (RθJC = 15°C/W), body diode forward voltage (VSD = 0.70V typ), and PowerDI3333-8 footprint compatibility with FR-4 PCB layouts.
Technical Context
This dual MOSFET integrates two matched N-channel silicon die in a single exposed-drain thermally enhanced package. Each channel operates independently with identical gate threshold (1.4–2.0V), enabling synchronous rectification or parallel load control without cross-conduction risk when driven with common gate logic.
Its low Ciss (1184 pF) and fast switching times (tD(ON) = 4.5 ns, tF = 3.6 ns) support high-frequency operation up to 1 MHz in buck converters, while the 0.9W steady-state power dissipation (RθJA = 134°C/W) requires careful thermal pad design per Diodes' recommended layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage per channel before avalanche onset |
| RDS(ON) @ 10V | 12 mΩ max - Enables <1.5W conduction loss at 12A per channel |
| RDS(ON) @ 4.5V | 17 mΩ max - Supports logic-level gate drive from 3.3V/5V microcontrollers |
| ID (TC=25°C) | 21 A - Continuous current rating per channel with heatsinked case |
| Ciss | 1184 pF - Low input capacitance reduces gate drive power and speeds turn-on |
| VGS(TH) | 1.4–2.0 V - Tight threshold range ensures consistent turn-on across temperature |
| tF | 3.6 ns - Fast fall time minimizes switching losses in high-frequency SMPS |
| RθJC | 15 °C/W - Exposed drain pad enables direct thermal path to PCB copper plane |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pads. Molded green compound, UL 94V-0 rated, lead-free and RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain 1 | Primary current output node for Channel 1; electrically tied to exposed thermal pad |
| S1 | Source 1 | Return path for Channel 1; isolated from S2 for independent channel control |
| G1 | Gate 1 | Control input for Channel 1; 3.0 Ω gate resistance limits ringing |
| D2 | Drain 2 | Drain node for Channel 2; separate but identical thermal and electrical structure to D1 |
| S2 | Source 2 | Independent return path for Channel 2; enables dual-load isolation |
| G2 | Gate 2 | Independent control input for Channel 2; no internal gate coupling |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel topology | Enables space-efficient dual-load switching or synchronous rectification without external matching components |
| Low RDS(ON) at 4.5V | 17 mΩ max allows full-rated current drive from standard logic-level controllers |
| Fast switching with low Qg | 21 nC total gate charge at 10V enables efficient 1 MHz operation with minimal driver stress |
| Exposed drain thermal pad | 15°C/W junction-to-case resistance supports >1.5W dissipation with 1-inch² 2oz copper |
| Low leakage and high VGSS | ±20V gate rating and <100 nA IGSS ensure robustness against transient overvoltage and noise |
Applications
| USB-C Load Switch | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: Dual-path power routing in USB-C PD sink applications requiring independent VBUS and CC line switching. IC Role / Device Role: Dual N-MOSFET load switch controlling upstream/downstream power paths with independent gate control. Use Value: 17 mΩ RDS(ON) at 4.5V enables <50 mV drop at 3A, meeting USB-C voltage tolerance while minimizing heat rise in thin-profile connectors. | Use Scenario: Secondary-side rectification in 5–12V isolated DC-DC converters for telecom and industrial power supplies. IC Role / Device Role: Synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 85%. Use Value: Matched dual channels allow interleaved or paralleled operation; 0.70V VSD body diode supports freewheeling during dead-time without external catch diodes. |
| Hot-Swap Controller FET | Motor Driver Half-Bridge |
Use Scenario: Inrush current limiting and fault protection in 24V industrial backplane modules. IC Role / Device Role: High-side and low-side switch pair implementing soft-start and current-limit shutdown. Use Value: 22A IAS avalanche rating and 24 mJ EAS withstand capability absorb inductive kickback during short-circuit events without failure. | Use Scenario: Low-voltage brushed DC motor control in battery-powered robotics and medical pumps. IC Role / Device Role: Dual half-bridge driver stage controlling direction and PWM speed via complementary gate signals. Use Value: Independent G1/G2 inputs enable precise dead-time control; 3.6 ns tF minimizes shoot-through risk during fast transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(ON) (18 mΩ @ 10V), same PowerDI3333-8 package, 30V rating | Lower current handling (16A vs 21A); suited for cost-sensitive, lower-power loads | Select when thermal margin is sufficient and BOM cost reduction is prioritized over peak efficiency |
| SI6926ADQ-T1-GE3 | SO-8 package, higher RDS(ON) (20 mΩ @ 10V), 30V rating, no exposed drain pad | Higher RθJA (62°C/W), limited to <1.2W dissipation; unsuitable for high-current thermal designs | Choose only if SO-8 footprint is mandatory and power density requirements are relaxed |
Compared with DMN3016LDV-13, DMN3026LSD-13 trades 29% higher conduction loss for lower unit cost, while SI6926ADQ-T1-GE3 sacrifices thermal performance and package-level efficiency for legacy SO-8 compatibility-neither matches the 12 mΩ/15°C/W combination of the DMN3016LDV-13 in thermally constrained designs.
Availability
DMN3016LDV-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, industrial hot-swap modules, and compact DC-DC converters requiring stable component supply, consistent parametric matching, and long-term production continuity.
Supply support for DMN3016LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, energy-efficient components for power management and signal integrity.
The DMN3016LDV belongs to Diodes' PowerDI® MOSFET product line, engineered specifically for high-density, thermally demanding applications where low RDS(ON), fast switching, and robust package thermal performance are critical.
FAQ
What is the maximum safe operating temperature for DMN3016LDV-13?
The device has a specified junction temperature range of –55°C to +150°C. For reliable long-term operation, junction temperature must remain ≤150°C under worst-case conditions. With RθJC = 15°C/W and typical PCB thermal design, sustained 21A operation requires active cooling or derating above 85°C ambient.
Can DMN3016LDV-13 be used in linear mode (as a pass transistor)?
No-it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) curve (Figure 12) shows only pulsed operation up to 70A for 100μs. Continuous linear use risks thermal runaway due to positive temperature coefficient of RDS(ON) and insufficient SOA margin.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes-the body diode has tRR = 9.3 ns and QRR = 2.5 nC at IF = 12A, di/dt = 500 A/μs. These values support high-frequency synchronous rectification in buck converters up to 1 MHz, provided gate timing avoids overlap during diode conduction.
Does the PowerDI3333-8 package require solder paste stencil adjustments versus standard SO-8?
Yes-the PowerDI3333-8 uses an exposed drain pad with 3.05 mm × 3.05 mm thermal land. Recommended stencil aperture is 80–90% open area (e.g., 2.4 mm × 2.4 mm) with 0.12 mm thickness to ensure void-free solder joint and optimal thermal transfer, unlike standard SO-8's non-thermal leads.
DMN3016LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1184pF @ 15V
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8
DMN3016LDV-13 FAQ
1.How can I place an order for DMN3016LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3016LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3016LDV-13 reliable?
The price and inventory of DMN3016LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3016LDV-13 is usually 5 days.
3.What payment methods are accepted for DMN3016LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3016LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3016LDV-13?
DMN3016LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3016LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3016LDV-13?
For technical support, including DMN3016LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3016LDV-13 requirements.
6.How does Aetrix verify that DMN3016LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMN3016LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3016LDV-13 meets industry standards.
7.What is the process for return or replacement of DMN3016LDV-13?
All DMN3016LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3016LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3016LDV-13 part is unused and in its original packaging.
Return procedure for DMN3016LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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