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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN3016LDV-7

Name: DMN3016LDV-7
Brand: Diodes Incorporated
SKU: DMN3016LDV-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3016LDV-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-PowerVDFN

Datasheet:: DMN3016LDV-7.pdf

Description:: MOSFET 2N-CH 21A PWRDI3333

Quantity:: RFQ Add To RFQ list

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Inventory:1,106

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Product details

Overview

DMN3016LDV-7 from Diodes Incorporated is a dual 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (UXC) package, rated for 21A continuous drain current at V_GS = 10V, with R_DS(ON) = 12 mΩ max and fast switching (t_F = 3.6 ns), used in high-efficiency power management and analog switching circuits.

For engineers reviewing the DMN3016LDV-7 datasheet, DMN3016LDV-7 pinout, DMN3016LDV-7 application, or DMN3016LDV-7 equivalent, this dual N-channel MOSFET supports compact DC-DC converter topologies, load switching, and battery protection where low conduction loss and fast turn-off are critical.

Technical Context

This dual MOSFET integrates two independent N-channel channels in a single thermally enhanced PowerDI3333-8 package with exposed drain pads for low R_θJC (15°C/W). Each channel features matched threshold voltage (V_GS(TH) = 1.4–2.0 V) and exhibits low gate charge (Q_g = 21 nC @ 10 V) for efficient gate drive.

Its dynamic characteristics include C_iss = 1184 pF, C_oss = 137 pF, and Cr_ss = 107 pF at V_DS = 15 V, enabling stable operation in synchronous buck converters and hot-swap controllers while minimizing switching losses and EMI generation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports 24 V rail systems with 25 % margin against transients
R_DS(ON) max	12 mΩ @ V_GS = 10 V - Enables ≤250 mW conduction loss at 10 A per channel
I_D max	21 A @ T_C = +25°C - Sustains high-current pulsed loads in power distribution
Q_g	21 nC @ V_GS = 10 V - Reduces gate driver power demand and enables >1 MHz switching
t_F	3.6 ns - Limits cross-conduction risk in synchronous rectification
R_θJC	15°C/W - Allows direct thermal coupling to PCB copper for reliable 1.8 W dissipation

Pinout & Package

Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with dual exposed drain pads. Molded green compound, UL 94V-0 rated, MSL Level 1.

Pin/Terminal	Circuit Role	Design Meaning
D1, D2	Drain 1 / Drain 2	Exposed copper pads - primary thermal path and high-current output nodes
S1, S2	Source 1 / Source 2	Low-side return paths; tied to ground or common source node in half-bridge
G1, G2	Gate 1 / Gate 2	Independent control inputs; require <2.0 V threshold for logic-level drive

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	12 mΩ @ 10 V - cuts I²R loss by >35 % vs. comparable 30 V dual MOSFETs
Low Q_gd/Q_g ratio	4.1/21 nC = 0.195 - improves hard-switching efficiency and reduces Miller-induced shoot-through
Fast diode recovery	t_RR = 9.3 ns, Q_RR = 2.5 nC - minimizes reverse recovery loss in synchronous rectifiers
Green construction	Halogen- and antimony-free, RoHS-compliant - meets IPC-1752A Class 2 reporting requirements

Applications

DC-DC Converter Switching Stage

Battery Protection Circuit

Use Scenario: Dual-channel synchronous buck converter in portable industrial power modules.

IC Role / Device Role / Timing Role: High- and low-side N-channel switches operating at 500 kHz–1 MHz with dead-time control.

Use Value: 12 mΩ R_DS(ON) and 3.6 ns t_F reduce total switching + conduction loss to <1.2 W at 12 A output.

Use Scenario: Dual-MOSFET back-to-back configuration for Li-ion battery cell isolation and overcurrent cutoff.

IC Role / Device Role / Timing Role: Reverse-polarity and short-circuit protection switch with integrated body diode forward conduction.

Use Value: Matched V_GS(TH) (1.4–2.0 V) ensures simultaneous turn-on; low leakage (<1 μA) preserves standby battery life.

Hot-Swap Controller Interface

USB-C Power Delivery Load Switch

Use Scenario: Inrush current limiting and fault isolation in 12 V server board power rails.

IC Role / Device Role / Timing Role: Low-side load switch controlled by external current-sense amplifier and comparator.

Use Value: 70 A pulsed drain rating (I_DM) withstands 10 ms surge events; 137 pF C_oss stabilizes gate loop during fault response.

Use Scenario: 5–20 V bidirectional power path control in USB-C PD sink applications.

IC Role / Device Role / Timing Role: Dual-channel analog switch enabling VBUS/VCONN routing and fault blocking.

Use Value: 17 mΩ R_DS(ON) @ 4.5 V allows direct 3.3 V GPIO control; 107 pF Cr_ss suppresses noise coupling into CC line.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3016LSD-7	Same die, SO-8 package - higher R_θJA (70°C/W vs. 134°C/W), no exposed drain	Limited to lower-power (<1.2 W) applications due to thermal derating	Select when board space permits SO-8 footprint and thermal budget allows 40 % lower power handling
SI6926ADQ-T1-GE3	30 V, 14 mΩ @ 10 V, 18 A, SO-8 - higher Q_g (28 nC), slower t_F (10 ns)	Less suitable for >500 kHz switching; requires stronger gate driver	Choose only if legacy SO-8 layout reuse is mandatory and efficiency loss <5 % is acceptable

Compared with DMN3016LDV-7, DMN3016LSD-7 trades thermal performance for standard packaging compatibility, while SI6926ADQ-T1-GE3 offers broader distributor availability but sacrifices switching speed and gate drive efficiency-making DMN3016LDV-7 optimal for thermally constrained, high-frequency power stages.

Availability

DMN3016LDV-7 is available at Aetrix Electronics and suitable for DC-DC converter switching stages, battery protection circuits, hot-swap controller interfaces, and USB-C power delivery load switches requiring stable component supply and consistent parametric performance across production lots.

Supply support for DMN3016LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers in Asia, Europe, and the US, serving industrial, computing, consumer, and communications markets.

The DMN3016LDV-7 belongs to Diodes' PowerDI® family of thermally optimized MOSFETs, engineered specifically for high-density power management where low R_DS(ON), fast switching, and robust thermal performance are essential.

FAQ

What is the maximum safe operating temperature for DMN3016LDV-7?

The junction temperature must not exceed +150°C under steady-state or transient conditions. With R_θJC = 15°C/W and typical PCB copper area, the device sustains 1.8 W dissipation at T_C = +70°C. Derating is required above that case temperature per the datasheet's thermal resistance curves.

Can DMN3016LDV-7 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its V_GS(TH) range (1.4–2.0 V) ensures turn-on at 3.3 V, and R_DS(ON) = 17 mΩ @ V_GS = 4.5 V provides adequate conduction. However, full 12 mΩ performance requires ≥10 V gate drive; for 3.3 V logic, confirm load current stays within 18 A derated limit.

Is the body diode suitable for reverse current conduction in synchronous rectification?

Yes - the intrinsic body diode has V_SD = 0.70–1.0 V at 1 A and t_RR = 9.3 ns, making it viable for low-voltage synchronous rectification. Its Q_RR = 2.5 nC is low enough to avoid significant recovery loss at ≤1 MHz frequencies.

Does DMN3016LDV-7 support paralleling both channels for higher current?

No - the two channels share a common thermal path but have independent gates and sources. Paralleling requires matched V_GS(TH) and R_DS(ON), which is not guaranteed between channels. For higher current, use separate devices with individual thermal management and gate drive.

DMN3016LDV-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Rds On (Max) @ Id, Vgs:: 12mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 1184pF @ 15V

Power - Max:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8

DMN3016LDV-7 FAQ

1.How can I place an order for DMN3016LDV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3016LDV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3016LDV-7 reliable?

The price and inventory of DMN3016LDV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3016LDV-7 is usually 5 days.

3.What payment methods are accepted for DMN3016LDV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3016LDV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3016LDV-7?

DMN3016LDV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3016LDV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3016LDV-7?

For technical support, including DMN3016LDV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3016LDV-7 requirements.

6.How does Aetrix verify that DMN3016LDV-7 is sourced from the original manufacturer or authorized distributors?

All DMN3016LDV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3016LDV-7 meets industry standards.

7.What is the process for return or replacement of DMN3016LDV-7?

All DMN3016LDV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3016LDV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3016LDV-7 part is unused and in its original packaging.

Return procedure for DMN3016LDV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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