Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN3016LFDF-13

Part No.:
DMN3016LFDF-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMN3016LFDF-13.pdf
Description:
MOSFET N-CH 30V 12A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,691

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN3016LFDF-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 12 mΩ RDS(ON) at VGS = 10V and 16 mΩ at VGS = 4.5V, rated for 10 A continuous drain current at TA = +25°C. It delivers low-profile power switching in DC-DC converters and battery management systems where space-constrained PCB layouts demand high efficiency and thermal performance.

For engineers reviewing the DMN3016LFDF-13 datasheet, DMN3016LFDF-13 pinout, DMN3016LFDF-13 application, or DMN3016LFDF-13 equivalent, key selection criteria include its 0.6 mm profile, 4 mm² footprint, 1.4–2.0 V gate threshold voltage, 25.1 nC total gate charge at 10 V, and JEDEC-qualified reliability for industrial power management designs.

Technical Context

This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining fast switching characteristics: tD(ON) = 4.8 ns, tR = 16.5 ns, tD(OFF) = 26.1 ns, and tF = 5.6 ns under standard test conditions (VDD = 15 V, RL = 1.25 Ω, Rg = 3 Ω). Its Ciss = 1415 pF and Crss = 82 pF support stable operation in synchronous buck topologies.

The device integrates a body diode with VSD = 0.70–1.0 V at IS = 1 A and tRR = 12.3 ns (IF = 12 A, di/dt = 500 A/μs), enabling efficient freewheeling in high-frequency converters. Thermal resistance RθJA is 66 °C/W with 1-inch² copper pad, confirming suitability for thermally dense power stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum blocking voltage compatible with 24 V nominal input rails and transient margin.
RDS(ON) 12 mΩ @ VGS = 10 V - Enables <120 mW conduction loss at 10 A, critical for >95% converter efficiency.
ID (max) 10 A @ TA = +25°C - Supports high-current output stages in compact point-of-load regulators.
Qg 25.1 nC @ VGS = 10 V - Determines gate drive power and switching loss in 500 kHz–1 MHz applications.
RθJA 66 °C/W - Achieved with 1-inch² copper pad; enables 2.02 W power dissipation without forced cooling.
VGS(TH) 1.4–2.0 V - Ensures robust turn-on with 3.3 V or 5 V logic-level gate drivers.
Coss 119 pF - Low output capacitance minimizes dead-time losses and improves light-load efficiency.

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, 0.65 mm pitch, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Top View) Drain Main current path terminal; connected to high-side switch node or ground return in low-side configuration.
Pin 2 Source Reference node for gate control and body diode cathode; tied to power ground or output rail.
Pin 3 Gate Control input; requires 1.4–2.0 V threshold to initiate conduction; sensitive to ESD per MIL-STD-202.
Pin 4 Drain Second drain connection; paralleled internally with Pin 1 to reduce package inductance and RDS(ON).
Pin 5 Source Second source connection; paralleled internally with Pin 2 to improve current sharing and thermal spreading.
Pin 6 Drain Third drain connection; enhances thermal coupling to PCB copper and reduces thermal resistance by 30% vs. 3-pin DFN.

Key Features

Feature Design Value
Ultra-low profile (0.6 mm height) Enables integration into space-constrained modules such as USB-C PD adapters and wearable battery packs.
4 mm² PCB footprint Reduces board area by >50% versus SO-8 or PowerPAK 1212-8, supporting miniaturized DC-DC solutions.
JEDEC-qualified reliability Validated per AEC-Q stress standards for long-term stability in industrial temperature range (−55°C to +150°C).
Halogen- and antimony-free "Green" construction Meets RoHS 3 (2015/863/EU) with <900 ppm Br, <900 ppm Cl, <1000 ppm Sb-compliant for eco-sensitive end equipment.
Low gate threshold voltage Ensures full enhancement with 3.3 V microcontroller GPIO, eliminating need for level-shifting gate drivers.

Applications

Battery Protection Circuit USB-C Power Delivery Module

Use Scenario: Bidirectional overcurrent and short-circuit protection in Li-ion battery packs using integrated protection ICs.

IC Role / Device Role: Low-side switch controlling discharge path; body diode supports reverse-current blocking during charging.

Use Value: 12 mΩ RDS(ON) limits voltage drop to <120 mV at 10 A, preserving battery runtime and thermal headroom.

Use Scenario: Synchronous rectification in 20–100 W USB-C PD buck-boost converters.

IC Role / Device Role: High-efficiency power switch in secondary-side regulation; driven by dedicated gate controller.

Use Value: 25.1 nC Qg and 16.5 ns tR enable clean 1 MHz switching with minimal overlap loss.

Industrial IoT Sensor Node Automotive Body Control Module

Use Scenario: Load switching for ultra-low-power sensors and RF transceivers powered from coin-cell or energy-harvesting sources.

IC Role / Device Role: High-side or low-side load switch enabling precise power gating and leakage control.

Use Value: 1 μA IDSS at VDS = 30 V ensures <100 nW standby loss-critical for multi-year battery life.

Use Scenario: LED driver and solenoid control in non-safety-critical automotive cabin functions (e.g., door locks, interior lighting).

IC Role / Device Role: Logic-level controlled power switch interfacing with 3.3 V/5 V microcontrollers.

Use Value: 1.4–2.0 V VGS(TH) guarantees reliable turn-on across automotive voltage transients (4.5–16 V battery range).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3016LFG-7 Same die, identical RDS(ON), Qg, and thermal specs; differs only in packaging (3,000/reel vs. 10,000/reel). No functional difference; selected solely for smaller-volume procurement or prototyping quantity requirements. Choose when order volume aligns with 3k tape-and-reel; no design or layout impact.
DMN3016LFDE-7 Same electrical specs but U-DFN2020-6 (Type E) variant-slightly different leadframe geometry and marking location. Compatible footprint and soldering profile; validated for same industrial applications but not automotive-qualified. Select for cost-sensitive industrial designs where AEC-Q traceability is not required.

Compared with DMN3016LFDF-13, DMN3016LFG-7 offers identical performance in smaller reels, while DMN3016LFDE-7 provides equivalent electrical behavior with alternate mechanical marking-both require no schematic or layout changes but differ in supply chain logistics and qualification scope.

Availability

DMN3016LFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial IoT sensor nodes requiring stable component supply, JEDEC-compliant reliability, and compact 2×2 mm footprint.

Supply support for DMN3016LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage DC-DC conversion and battery-powered system switching-emphasizing low RDS(ON), fast switching, and miniature packaging.

FAQ

What is the maximum continuous drain current at 70°C ambient?

At TA = +70°C, DMN3016LFDF-13 supports 8 A continuous drain current with VGS = 10 V under steady-state conditions on a FR-4 board with 2 oz copper and minimum recommended pad layout. This rating assumes no additional heatsinking and accounts for thermal derating due to increased junction-to-ambient resistance at elevated temperatures.

Is this MOSFET suitable for 3.3 V logic-level gate drive?

Yes-its gate threshold voltage range is 1.4–2.0 V, ensuring full enhancement with 3.3 V microcontroller outputs. At VGS = 4.5 V, it achieves 16 mΩ RDS(ON) and 8.5 A ID, making it compatible with standard 3.3 V or 5 V gate drivers without external level shifting.

Does DMN3016LFDF-13 have an integrated body diode, and what are its characteristics?

Yes-it features an intrinsic body diode with forward voltage VSD = 0.70–1.0 V at IS = 1 A and reverse recovery time tRR = 12.3 ns under IF = 12 A and di/dt = 500 A/μs. This enables use in synchronous rectification and freewheeling paths without external diodes.

What is the thermal resistance when mounted on a 1-inch² copper pad?

When mounted on a FR-4 board with 2 oz copper and a 1-inch² copper plate, DMN3016LFDF-13 exhibits RθJA = 66 °C/W (steady state) and RθJC = 11.6 °C/W. This allows 2.02 W power dissipation at TA = +25°C before reaching the 150°C maximum junction temperature.

DMN3016LFDF-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1415 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.02W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type F)

DMN3016LFDF-13 FAQ

1.How can I place an order for DMN3016LFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3016LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3016LFDF-13 reliable?

The price and inventory of DMN3016LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3016LFDF-13 is usually 5 days.

3.What payment methods are accepted for DMN3016LFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3016LFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3016LFDF-13?

DMN3016LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3016LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3016LFDF-13?

For technical support, including DMN3016LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3016LFDF-13 requirements.

6.How does Aetrix verify that DMN3016LFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMN3016LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3016LFDF-13 meets industry standards.

7.What is the process for return or replacement of DMN3016LFDF-13?

All DMN3016LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3016LFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3016LFDF-13 part is unused and in its original packaging.

Return procedure for DMN3016LFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3016LFDF-13 Tags

  • DMN3016LFDF-13
  • DMN3016LFDF-13 PDF
  • DMN3016LFDF-13 Datasheet
  • DMN3016LFDF-13 Specifications
  • DMN3016LFDF-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN3016LFDF-13
  • Buy DMN3016LFDF-13
  • DMN3016LFDF-13 Price
  • DMN3016LFDF-13 Distributor
  • DMN3016LFDF-13 Supplier
  • DMN3016LFDF-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER