Diodes Incorporated DMN3016LFDF-7-90

Overview

DMN3016LFDF-7-90 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 12 mΩ R_DS(ON) at V_GS = 10 V and 16 mΩ at 4.5 V, rated for 10 A continuous drain current at 25°C. It serves as a high-efficiency power switch in synchronous buck converters and battery protection circuits.

For engineers reviewing the DMN3016LFDF-7-90 datasheet, DMN3016LFDF-7-90 pinout, DMN3016LFDF-7-90 application, or DMN3016LFDF-7-90 equivalent, key selection criteria include low-profile 0.6 mm height, 4 mm² PCB footprint, gate threshold voltage range (1.4–2.0 V), thermal resistance (66 °C/W with copper plate), and JEDEC-qualified reliability for industrial power management designs.

Technical Context

This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining fast switching performance, evidenced by 25.1 nC total gate charge at V_GS = 10 V and 11.3 nC at 4.5 V. Its 82 pF reverse transfer capacitance (Crss) and 1415 pF input capacitance (Ciss) support efficient high-frequency operation in DC-DC converters up to 1 MHz.

The device features an integrated body diode with 12.3 ns reverse recovery time and 10.4 nC Q_RR, enabling robust synchronous rectification. Thermal design is supported by a junction-to-case resistance of 11.6 °C/W and transient thermal impedance curves validated per JEDEC standards.

Key Specifications

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0 × 2.0 mm footprint, 0.6 mm profile, NiPdAu-plated terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3025LFD-7 and NTMFS4C06NT1G, DMN3016LFDF-7-90 uniquely balances 10 A current capability, 16 mΩ logic-level R_DS(ON), and 2.0 × 2.0 mm footprint-making it optimal for space-constrained, medium-power industrial and portable applications requiring both efficiency and compactness.

Availability

DMN3016LFDF-7-90 is available at Aetrix Electronics and suitable for battery management systems, DC-DC converters, and USB-C power delivery sinks requiring stable component supply and JEDEC-qualified reliability.

Supply support for DMN3016LFDF-7-90 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This part belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, low-voltage power conversion in portable, industrial, and automotive-adjacent applications where thermal performance and small form factor are critical.

FAQ

What is the maximum allowable junction temperature for DMN3016LFDF-7-90?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of the silicon die and interconnects. Thermal design must ensure T_J remains below 150°C under worst-case ambient, power dissipation, and PCB layout conditions, using the provided R_θJA = 66 °C/W (with copper plate) or 174 °C/W (standard FR-4) values.

Is DMN3016LFDF-7-90 qualified for automotive applications?

No-the DMN3016LFDF-7-90 is an industrial-grade part qualified to JEDEC reliability standards but not AEC-Q101. For automotive use, Diodes offers the Q-suffix variant DMN3016LFDFQ-7, which undergoes additional stress testing, PPAP documentation, and is manufactured in IATF 16949-certified facilities. Refer to Diodes' Automotive Products page for qualified alternatives.

Can DMN3016LFDF-7-90 be used in parallel configurations?

Yes, but with careful attention to gate drive matching and current sharing. The device's positive temperature coefficient of R_DS(ON) (confirmed in Fig. 6) promotes inherent current balancing. However, layout symmetry, individual gate resistors (≤3 Ω), and matched trace lengths are required to prevent oscillation and uneven thermal stress. Derate total current by 20% for two devices in parallel.

What is the recommended PCB pad layout for U-DFN2020-6 (Type F)?

Diodes specifies a 0.65 mm center pad with four 0.40 × 0.48 mm outer pads and defined solder mask openings. Minimum copper area under the exposed drain pad is 1.7 × 2.3 mm (X3 × Y4) with thermal vias (≥4 × 0.3 mm diameter) to inner ground planes. Full dimensions and Gerber recommendations are published in Package Outline Document AP02002, revision G, available at diodes.com/package-outlines.html.