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Diodes Incorporated DMN3016LFDFQ-13
- Part No.:
- DMN3016LFDFQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3016LFDFQ-13.pdf
- Description:
- MOSFET BVDSS: 25V~30V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:6,890
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Product details
Overview
DMN3016LFDFQ-13 from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type F) package, rated for 30V VDSS, 12 mΩ RDS(ON) @ 10V VGS, and 10A continuous drain current at 25°C - designed for high-efficiency, space-constrained automotive power management including battery protection and DC-DC converter primary-side switching.
For engineers reviewing the DMN3016LFDFQ-13 datasheet, DMN3016LFDFQ-13 pinout, DMN3016LFDFQ-13 application, or DMN3016LFDFQ-13 equivalent, key selection criteria include low-profile 0.6 mm height, 4 mm² PCB footprint, AEC-Q101 qualification with PPAP support, thermal resistance of 66 °C/W (with copper pad), and gate threshold voltage range of 1.4–2.0 V for robust 3.3V/5V logic-level drive compatibility.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in automotive-grade power stages. Its 12 mΩ on-resistance at 10V gate drive and 16 mΩ at 4.5V enables efficient operation in 12V battery systems with minimal conduction loss.
The device integrates a body diode with 12.3 ns reverse recovery time and 10.4 nC QRR, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by its 11.6 °C/W RθJC and validated performance across –55°C to +150°C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Supports 12V automotive battery rails with 2.5× safety margin against load-dump transients. |
| RDS(ON) @ 10V | 12 mΩ - Delivers ≤1.2 W conduction loss at 10A, enabling compact thermal design in space-limited modules. |
| RDS(ON) @ 4.5V | 16 mΩ - Ensures full enhancement under 5V microcontroller GPIO drive without external level-shifting. |
| VGS(TH) | 1.4–2.0 V - Guarantees reliable turn-on with 3.3V logic and immunity to noise-induced false triggering. |
| Qg @ 10V | 25.1 nC - Enables <100 ns total switching time with 3 Ω gate resistor, minimizing dynamic losses in 500 kHz converters. |
| RθJA (w/ 1″² Cu) | 66 °C/W - Allows 2.02 W power dissipation at 70°C ambient, supporting sustained 8.5A operation in thermally managed layouts. |
| Avalanche Energy EAR | 24 mJ - Withstands repetitive unclamped inductive switching events common in motor driver and solenoid control. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, 0.65 mm pitch, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View) | Drain | Main high-current path; connected to internal die backside and exposed thermal pad - must be soldered to PCB copper for thermal and electrical continuity. |
| Pin 2 | Source | Reference node for gate drive and current sensing; tied to ground plane in high-side switch configurations. |
| Pin 3 | Gate | Control input; requires <2.6 Ω series resistance to damp ringing due to 2.6 Ω intrinsic gate resistance and 1415 pF Ciss. |
| Pin 4 | Drain | Second drain terminal - paralleled with Pin 1 to reduce package inductance and improve current sharing in high-frequency switching. |
| Pin 5 | Source | Second source terminal - used with Pin 2 to minimize source inductance in Kelvin-sensing or high-di/dt applications. |
| Pin 6 | Gate | Second gate terminal - provides redundant gate connection to mitigate routing impedance and ensure uniform turn-on across die. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into ultra-thin automotive ECUs and ADAS modules where Z-height is constrained to ≤1.0 mm. |
| 4 mm² PCB footprint | Reduces board area by >40% vs. SO-8 equivalents, critical for multi-phase buck controllers in compact battery management systems. |
| AEC-Q101 qualification + PPAP support | Validates reliability for automotive safety-critical functions including ISO 26262 ASIL-B power stages and BMS cell balancing circuits. |
| Low RDS(ON) @ 4.5V | Eliminates need for gate drivers in 5V MCU-based power switches, reducing BOM count and layout complexity in cost-sensitive modules. |
| Halogen- and antimony-free "Green" construction | Meets EU ELV Directive and OEM chemical compliance requirements (Br+Cl <1500 ppm, Sb <1000 ppm) for global vehicle programs. |
Applications
| Battery Management System (BMS) | Automotive DC-DC Converter |
|---|---|
|
Use Scenario: High-side main disconnect switch in 12V lithium-ion battery packs for EVs and HEVs. IC Role / Device Role / Timing Role: Power MOSFET performing overcurrent and short-circuit protection via fast turn-off (<100 ns) and avalanche-rated ruggedness. Use Value: 24 mJ single-pulse avalanche energy withstands fault currents up to 22 A without failure, eliminating need for external fuses in Class D BMS designs. |
Use Scenario: Synchronous rectifier in 12V-to-5V/3.3V buck converter powering infotainment head units. IC Role / Device Role / Timing Role: Low-side switch operating at 500 kHz with 16 mΩ RDS(ON) @ 4.5V, driven directly by PWM controller's logic-level output. Use Value: 10.4 nC QRR and 12.3 ns tRR minimize reverse recovery loss, improving efficiency by ≥1.2% vs. standard Schottky alternatives at 10A load. |
| Engine Control Unit (ECU) Load Driver | ADAS Camera Power Module |
|
Use Scenario: Driving solenoid valves and fuel injectors requiring precise pulse-width modulated current control. IC Role / Device Role / Timing Role: High-speed switching element with 26.1 ns tD(OFF) and 5.6 ns tF, enabling sub-microsecond duty cycle resolution. Use Value: 50 A pulsed drain current rating supports peak injector currents while maintaining <100 °C junction rise under 10% duty cycle conditions. |
Use Scenario: Input protection and hot-swap control for 12V camera modules in rear-view and surround-view systems. IC Role / Device Role / Timing Role: Reverse polarity and overvoltage protected front-end switch with integrated body diode and low 1.4 V VGS(TH) for fast response. Use Value: 1.0 V VSD forward drop at 1A ensures <50 mW conduction loss during normal operation, preserving PSRR in noise-sensitive image signal chains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | 40V VDSS, 1.4 mΩ RDS(ON) @ 10V, larger TSDSON-8 package (3.3 × 3.3 mm). | Higher voltage margin but 2.7× larger footprint; unsuitable for U-DFN2020-6 footprint-constrained designs. | Select only when 40V transient immunity is required and board area permits larger package. |
| ON Semiconductor NTMFS4C09NT1G | 30V VDSS, 9.5 mΩ RDS(ON) @ 10V, same U-DFN2020-6 package but higher 2.2 V VGS(TH) max. | Lower on-resistance but marginal 3.3V logic compatibility due to higher threshold; may require gate boosting. | Prefer for efficiency-critical 5V-driven applications; avoid in 3.3V MCU-controlled BMS where VGS(TH) margin is critical. |
Compared with BSC014N04LS6 and NTMFS4C09NT1G, the DMN3016LFDFQ-13 uniquely balances AEC-Q101 compliance, 0.6 mm height, 4 mm² footprint, and guaranteed 2.0 V max VGS(TH) - making it the only option qualified for thin-profile, 3.3V-driven automotive power switches requiring PPAP documentation.
Availability
DMN3016LFDFQ-13 is available at Aetrix Electronics and suitable for automotive battery management, DC-DC conversion, and engine control unit load driving requiring stable component supply, long-term lifecycle assurance, and full AEC-Q101 traceability.
Supply support for DMN3016LFDFQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with IATF 16949-certified manufacturing.
The DMN3016LFDFQ belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant, space-constrained power switching in 12V vehicle networks - emphasizing low RDS(ON), thermal efficiency, and robust gate drive compatibility.
FAQ
Is DMN3016LFDFQ-13 suitable for hot-swap applications?
Yes. Its 30V VDSS, 1.4–2.0 V VGS(TH), and 12 mΩ RDS(ON) enable controlled inrush limiting in 12V hot-swap circuits. The device's 2.5A maximum body diode forward current and 1.0 V VSD support bidirectional current flow during plug-in events without external diodes.
What is the recommended PCB pad layout for thermal performance?
Use the manufacturer-specified U-DFN2020-6 (Type F) pad layout with a 1-inch² copper pour connected to the exposed drain pad via ≥4 thermal vias (0.3 mm diameter, 0.8 mm spacing). This achieves the 66 °C/W RθJA rating and supports 2.02 W continuous power dissipation at 70°C ambient.
Does DMN3016LFDFQ-13 support synchronous rectification?
Yes. Its 12.3 ns reverse recovery time, 10.4 nC QRR, and low 1.0 V VSD make it suitable for synchronous rectification in buck converters up to 500 kHz. The dual-source/dual-drain pin configuration minimizes source inductance, critical for accurate current sensing in SR control loops.
How does the device perform under extended temperature cycling?
Qualified to AEC-Q101, DMN3016LFDFQ-13 undergoes 1000 cycles of –40°C to +125°C temperature cycling with no parameter shift beyond specification limits. Its mold compound meets UL 94V-0 and J-STD-020 Level 1 moisture sensitivity, ensuring reliability in reflow and field operation across automotive life cycles.
DMN3016LFDFQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1415 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 730mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN3016LFDFQ-13 FAQ
1.How can I place an order for DMN3016LFDFQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3016LFDFQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3016LFDFQ-13 reliable?
The price and inventory of DMN3016LFDFQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3016LFDFQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3016LFDFQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3016LFDFQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3016LFDFQ-13?
DMN3016LFDFQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3016LFDFQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3016LFDFQ-13?
For technical support, including DMN3016LFDFQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3016LFDFQ-13 requirements.
6.How does Aetrix verify that DMN3016LFDFQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3016LFDFQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3016LFDFQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3016LFDFQ-13?
All DMN3016LFDFQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3016LFDFQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3016LFDFQ-13 part is unused and in its original packaging.
Return procedure for DMN3016LFDFQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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