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Diodes Incorporated DMN3018SSD-13
- Part No.:
- DMN3018SSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN3018SSD-13.pdf
- Description:
- MOSFET 2N-CH 30V 6.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:27,276
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Product details
Overview
DMN3018SSD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V VDSS, 22 mΩ RDS(ON) @ 10V VGS, and 6.7A continuous drain current at 25°C - optimized for high-efficiency DC-DC converters and backlighting power stages.
For engineers reviewing the DMN3018SSD-13 datasheet, DMN3018SSD-13 pinout, DMN3018SSD-13 application, or DMN3018SSD-13 equivalent, key selection criteria include dual-channel RDS(ON) matching, AEC-Q101 qualification, 100% UIS rating, and SO-8 thermal performance under pulsed load conditions.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single SO-8 package with independent gate, source, and drain terminals per channel. Each channel supports ±20V gate drive, operates from −55°C to +150°C, and features integrated ESD protection on all gates.
The device delivers low conduction loss (23 mΩ @ 4.5V VGS) while maintaining fast switching: tD(ON) = 4.3 ns, Qg = 13.2 nC @ 10V, and Ciss = 697 pF - enabling high-frequency synchronous buck topologies with minimal gate drive power.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - maximum blocking voltage per channel; suitable for 24V rail and 12V input DC-DC stages |
| RDS(ON) @ 10V | 22 mΩ max - enables <1.5 W conduction loss at 6.7A, critical for thermally constrained PCB layouts |
| RDS(ON) @ 4.5V | 30 mΩ max - ensures robust operation with 3.3V/5V logic-level gate drive in low-voltage control systems |
| ID (continuous) | 6.7 A @ 25°C - defines steady-state current capability with 1.5 W total power dissipation limit |
| Qg @ 10V | 13.2 nC - determines gate driver current requirement and switching transition time in PWM circuits |
| Avalanche energy EAR | 18 mJ - provides ruggedness against inductive switching transients without external snubbers |
| TJ range | −55°C to +150°C - supports automotive under-hood and industrial ambient environments |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin small-outline), molded green plastic, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G1 (Gate 1) | Independent gate control for Channel 1; requires ≤±20V drive; ESD-protected |
| 2 | S1 (Source 1) | Channel 1 source return; tied to internal substrate; electrically isolated from S2 |
| 3 | D1 (Drain 1) | Channel 1 high-side or low-side switch node; connects to load or input rail |
| 4 | S2 (Source 2) | Channel 2 source return; separate from S1; enables floating or common-source configurations |
| 5 | D2 (Drain 2) | Channel 2 switch node; fully independent of D1; supports dual-phase or redundant paths |
| 6 | G2 (Gate 2) | Independent gate for Channel 2; identical drive requirements and protection as G1 |
| 7–8 | Thermal pad / exposed copper | Not electrically connected; soldered to PCB ground plane for RθJA reduction from 83 to ~50°C/W |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Identical RDS(ON), VGS(TH), and dynamic parameters enable balanced current sharing in parallel or half-bridge use |
| 100% UIS-rated avalanche capability | Withstands repetitive unclamped inductive switching events up to 19A and 18mJ without degradation |
| AEC-Q101 qualified | Validated for automotive power management applications including infotainment and body electronics |
| ESD-protected gate structure | HBM >2 kV per channel eliminates need for external gate protection in typical board-level ESD environments |
| Green, lead-free, halogen-free construction | Meets RoHS 2 and JESD22-A114 standards; <900 ppm Br/Cl, <1000 ppm Sb; UL 94V-0 flammability rating |
Applications
| Automotive LED Headlight Driver | Industrial Dual-Phase Buck Converter |
|---|---|
|
Use Scenario: High-brightness LED arrays requiring precise current regulation and thermal resilience in engine compartment environments. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling parallel LED strings; each channel handles 3–4A with synchronized PWM dimming. Use Value: Matched RDS(ON) ensures equal current split; AEC-Q101 rating and 150°C TJ support sustained operation at elevated ambient temperatures. |
Use Scenario: 12V-to-3.3V/5V point-of-load conversion for PLC I/O modules with tight thermal constraints. IC Role / Device Role / Timing Role: Dual N-channel synchronous rectifier pair in interleaved buck topology operating at 500 kHz. Use Value: Low Qg (13.2 nC) and Ciss (697 pF) minimize gate drive losses; SO-8 thermal pad reduces junction temperature rise by ~33°C vs. standard layout. |
| Laptop Backlight Inverter | USB-C PD Power Path Switch |
|
Use Scenario: Boost-based CCFL or LED backlight supply in space-constrained notebook designs. IC Role / Device Role / Timing Role: Dual-channel high-side switch driving boost converter primary windings with phase-shifted control. Use Value: 30V VDSS accommodates reflected voltage spikes; 22 mΩ RDS(ON) limits conduction loss below 0.5W per channel at full brightness. |
Use Scenario: Bidirectional 20V/3A power path management in USB-C PD sink applications with overvoltage and reverse-current protection. IC Role / Device Role / Timing Role: Independent channel configuration allows one MOSFET as input switch and the other as output OR-ing diode replacement. Use Value: Body diode VSD = 0.5–1.2V enables low-loss reverse conduction; 100% UIS rating protects against hot-plug transients during cable insertion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(ON) = 28 mΩ @ 4.5V (vs. 30 mΩ); higher Qg = 15.5 nC; same SO-8 footprint | Better gate charge efficiency at 10V drive but slightly higher conduction loss at 4.5V | Prefer when gate drive voltage ≥10V and lower switching loss dominates over conduction loss |
| SI6926ADQ-T1-GE3 | 30V, 23 mΩ @ 4.5V, 12.5 nC Qg; not AEC-Q101 qualified; different pinout (G1/D1/S1/S2/D2/G2) | Lacks automotive qualification; requires PCB layout revision due to swapped pin assignments | Select only for non-automotive industrial use where gate drive efficiency and cost are prioritized over qualification and pin compatibility |
Compared with DMN3018SSD-13, DMN3020LSD-13 trades marginally higher RDS(ON) for improved switching speed, while SI6926ADQ-T1-GE3 offers lower Qg but forfeits AEC-Q101 compliance and introduces layout risk via pinout mismatch.
Availability
DMN3018SSD-13 is available at Aetrix Electronics and suitable for automotive LED lighting, industrial DC-DC converters, and USB-C power delivery systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.
Supply support for DMN3018SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN3018SSD-13 belongs to Diodes' high-performance dual MOSFET product line, engineered specifically for compact, high-efficiency power conversion where thermal density, avalanche ruggedness, and automotive qualification are mandatory.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
At TA = +70°C, the DMN3018SSD-13 supports 5.3 A continuous drain current per channel with derating applied per its thermal resistance (RθJA = 83°C/W). This value assumes FR-4 PCB with 2 oz copper and 1-inch² copper area, as specified in Note 5 of the datasheet.
Can both channels be used in parallel for higher current handling?
Yes - the matched RDS(ON) and VGS(TH) characteristics allow parallel operation, but gate drive must be independently routed to avoid oscillation. Total current capacity remains limited by package thermal dissipation (1.5 W max), not just sum of individual ID ratings.
Is the thermal pad (pins 7–8) electrically connected internally?
No - the exposed thermal pad is not electrically connected to any internal die or terminal. It must be soldered to a PCB ground plane or dedicated thermal copper pour solely for heat dissipation; no electrical connection is required or recommended.
Does the device support 3.3V logic-level gate drive in practical applications?
Yes - with RDS(ON) = 30 mΩ max at VGS = 4.5V and VGS(TH) = 1.0–2.1V, the DMN3018SSD-13 reliably switches at 3.3V gate drive in low-duty-cycle or moderate-current applications; full 6.7A rating requires ≥4.5V VGS.
DMN3018SSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.7A
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 697pF @ 15V
- Power - Max:
- 1.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN3018SSD-13 FAQ
1.How can I place an order for DMN3018SSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3018SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3018SSD-13 reliable?
The price and inventory of DMN3018SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3018SSD-13 is usually 5 days.
3.What payment methods are accepted for DMN3018SSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3018SSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3018SSD-13?
DMN3018SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3018SSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3018SSD-13?
For technical support, including DMN3018SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3018SSD-13 requirements.
6.How does Aetrix verify that DMN3018SSD-13 is sourced from the original manufacturer or authorized distributors?
All DMN3018SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3018SSD-13 meets industry standards.
7.What is the process for return or replacement of DMN3018SSD-13?
All DMN3018SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3018SSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3018SSD-13 part is unused and in its original packaging.
Return procedure for DMN3018SSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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