Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3020UFDF-13

Name: DMN3020UFDF-13
Brand: Diodes Incorporated
SKU: DMN3020UFDF-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMN3020UFDF-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMN3020UFDF-13.pdf

Description:: MOSFET N-CH 30V 15A 6UDFN

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,947

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMN3020UFDF-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for high-efficiency power management with R_DS(ON) = 19 mΩ @ V_GS = 4.5V, 15 A continuous drain current at T_C = +25°C, and ESD-protected gate. It serves as a low-side synchronous rectifier or load switch in compact DC-DC converters.

For engineers reviewing the DMN3020UFDF-13 datasheet, DMN3020UFDF-13 pinout, DMN3020UFDF-13 application, or DMN3020UFDF-13 equivalent, key selection criteria include gate threshold voltage (0.4–1.0 V), thermal resistance (R_θJA = 63 °C/W with 1-inch² copper), low-profile 0.6 mm height, and compatibility with 1.8 V logic-level drive in battery-powered systems.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(ON) while maintaining fast switching (t_D(ON) = 4.1 ns, t_F = 3.2 ns) and low gate charge (Q_g = 15 nC @ V_GS = 4.5V). Its 0.6 mm profile and 4 mm² footprint support ultra-thin portable electronics.

The device integrates an intrinsic body diode with V_SD = 0.6–1.2 V @ I_S = 1.0 A and features NiPdAu-plated terminals for robust solderability. It operates across –55°C to +150°C junction temperature and meets AEC-Q101 stress-test requirements for automotive-grade reliability when qualified per customer request.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; suitable for 24 V nominal input rails with margin.
R_DS(ON)	19 mΩ @ V_GS = 4.5V - Enables <150 mW conduction loss at 10 A, critical for thermally constrained PCBs.
I_D (continuous)	15 A @ T_C = +25°C - Requires minimum 1-inch² copper pad for rated current handling per datasheet Note 6.
V_GS(TH)	0.4–1.0 V - Ensures turn-on with 1.8 V logic; avoids false triggering in noisy low-voltage environments.
Q_g	15 nC @ V_GS = 4.5V - Reduces gate driver power demand and enables >1 MHz switching in buck converters.
R_θJA	63 °C/W (with 1-inch² copper) - Limits junction rise to ~40°C above ambient at 1 W dissipation, enabling fanless operation.
Package	U-DFN2020-6 (Type F) - 2.0 × 2.0 × 0.6 mm footprint; exposes thermal pad for direct PCB heat sinking.

Pinout & Package

U-DFN2020-6 (Type F) is a 6-terminal, bottom-exposed thermal pad package with 0.65 mm pitch. The exposed pad (Pin 6) must be soldered to a dedicated thermal land for optimal power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Internally paralleled terminals; connect directly to ground plane or low-impedance source node.
4	Gate	Control input; requires ESD protection circuitry due to ±12 V rating and integrated gate protection diode.
5	Drain	Main power path output; connects to switched rail (e.g., buck converter output or battery terminal).
6	Thermal Pad (exposed)	Electrically isolated copper pad; must be soldered to PCB thermal land for R_θJC = 18 °C/W performance.

Key Features

Feature	Design Value
Low-profile 0.6 mm height	Enables integration into space-constrained modules such as USB-C PD adapters and wearable power banks.
ESD-protected gate	Withstands >2 kV HBM per JESD22-A114 without external TVS, reducing BOM count in handheld devices.
1.8 V logic-compatible V_GS(TH)	Guarantees full enhancement using standard I/O voltages from microcontrollers and PMICs.
Green, halogen-free construction	Meets IPC-1752A Class 2 reporting; contains <900 ppm Br/Cl and <1000 ppm Sb for RoHS 3 compliance.
Fast switching with low Q_gd/Q_gs	Q_gd = 2.1 nC and Q_gs = 2.0 nC minimize Miller plateau duration, improving duty-cycle control.

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Bidirectional overcurrent and short-circuit protection in Li-ion battery packs with cell monitoring ICs.

IC Role / Device Role: Low-side current-sense switch controlling discharge path; used with external sense resistor and comparator.

Use Value: 19 mΩ R_DS(ON) minimizes voltage drop across sense resistor, preserving battery runtime and accuracy.

Use Scenario: 5–20 V input path switching in portable USB-C PD sink adapters supporting 60 W+ output.

IC Role / Device Role: High-side or low-side load switch enabling/disabling power delivery negotiation and fault isolation.

Use Value: 0.6 mm profile allows dual-MOSFET layout in <10 mm² area; 15 A rating supports 3 A @ 20 V PD profiles.

Point-of-Load DC-DC Converter

Industrial Sensor Node Power Rail

Use Scenario: Synchronous rectifier in 3–12 V input buck converters powering FPGA I/O banks or ASIC cores.

IC Role / Device Role: Secondary-side switch replacing Schottky diode to reduce conduction losses and improve efficiency >92%.

Use Value: Q_g = 15 nC enables clean 1 MHz switching with minimal gate drive loss; C_iss = 1304 pF ensures stable loop response.

Use Scenario: Always-on power switch for wireless sensor nodes powered by coin-cell or energy-harvesting sources.

IC Role / Device Role: Ultra-low-leakage enable switch isolating downstream circuitry during sleep mode.

Use Value: I_DSS ≤ 1 µA at 30 V ensures <100 nA standby current contribution; V_GS(TH) stability over –40°C to +85°C ensures reliable wake-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LFG-7	Same die, but in leaded SOT-23-6 package; R_DS(ON) = 20 mΩ @ 4.5 V; higher R_θJA = 150 °C/W.	Preferred where hand-soldering or legacy through-hole rework is required; unsuitable for <1 mm Z-height designs.	Select when thermal pad access is impractical or board assembly lacks DFN reflow capability.
AO3400A	R_DS(ON) = 28 mΩ @ 4.5 V; no integrated gate protection diode; V_GS(TH) = 0.7–1.4 V; larger 2.9 × 1.6 mm SOT-23 footprint.	Higher conduction loss and less robust ESD immunity; requires external gate clamp for 1.8 V logic interfaces.	Choose only if cost sensitivity outweighs efficiency and reliability needs in non-critical consumer applications.

Compared with DMN3020LFG-7 and AO3400A, DMN3020UFDF-13 delivers superior thermal performance via its exposed pad, lower R_DS(ON), and guaranteed 1.8 V drive-making it the preferred choice for space- and efficiency-constrained battery-powered systems.

Availability

DMN3020UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and point-of-load DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable green sourcing.

Supply support for DMN3020UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-voltage power switching in portable and automotive electronics where size, thermal performance, and logic-level compatibility are critical.

FAQ

What is the maximum safe operating temperature for DMN3020UFDF-13?

The junction temperature must not exceed +150°C under any condition. With the recommended 1-inch² copper pad, the device sustains 15 A continuous current at T_C = +25°C. Derating is required above +70°C ambient; at +85°C, max continuous I_D drops to 10.4 A per datasheet Table 3.

Does DMN3020UFDF-13 require an external gate resistor?

A gate resistor is recommended to dampen ringing and limit peak current during switching. For 1 MHz operation with a 5 V gate driver, a 2.2 Ω series resistor controls dV/dt and reduces EMI without compromising t_D(ON) or t_F. No resistor is needed for static on/off control.

Can DMN3020UFDF-13 be used in reverse conduction (source-to-drain) mode?

Yes-the intrinsic body diode supports source-to-drain conduction with V_SD = 0.6–1.2 V at 1.0 A. However, reverse recovery time t_RR = 7.1 ns and Q_RR = 1.7 nC make it suitable only for low-frequency freewheeling; synchronous rectification requires complementary high-side control.

Is the thermal pad electrically isolated in U-DFN2020-6 (Type F)?

Yes-the exposed thermal pad (Pin 6) is electrically isolated from all signal terminals and must be connected solely to a PCB thermal land. It is not internally tied to source, drain, or gate; incorrect connection risks short circuits or thermal performance degradation.

DMN3020UFDF-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 8 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1304 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.03W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMN3020UFDF-13 FAQ

1.How can I place an order for DMN3020UFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3020UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3020UFDF-13 reliable?

The price and inventory of DMN3020UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3020UFDF-13 is usually 5 days.

3.What payment methods are accepted for DMN3020UFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3020UFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3020UFDF-13?

DMN3020UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3020UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3020UFDF-13?

For technical support, including DMN3020UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3020UFDF-13 requirements.

6.How does Aetrix verify that DMN3020UFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMN3020UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3020UFDF-13 meets industry standards.

7.What is the process for return or replacement of DMN3020UFDF-13?

All DMN3020UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3020UFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3020UFDF-13 part is unused and in its original packaging.

Return procedure for DMN3020UFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…