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Diodes Incorporated DMN3020UFDFQ-13
- Part No.:
- DMN3020UFDFQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3020UFDFQ-13.pdf
- Description:
- MOSFET BVDSS: 25V~30V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:7,111
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Product details
Overview
DMN3020UFDFQ-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for high-efficiency power management with RDS(ON) = 19 mΩ @ VGS = 4.5V, 15 A continuous drain current at TC = +25°C, and AEC-Q101 qualification for automotive use.
For engineers reviewing the DMN3020UFDFQ-13 datasheet, DMN3020UFDFQ-13 pinout, DMN3020UFDFQ-13 application, or DMN3020UFDFQ-13 equivalent, key selection criteria include low gate threshold voltage (0.4–1.0 V), fast switching speed (tD(ON) = 4.1 ns), ESD-protected gate, and thermal performance under constrained PCB space in battery management and DC-DC converter designs.
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining robust switching characteristics. Its 0.6 mm profile and 4 mm² footprint support ultra-thin portable and automotive electronics where board area and height are critical constraints.
The device integrates an internal gate protection diode and features NiPdAu-plated terminals for reliable solderability. It operates across –55°C to +150°C junction temperature range and supports pulsed drain currents up to 40 A with 15 mJ avalanche energy rating (L = 0.1 mH).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before breakdown; suitable for 24 V automotive rail and 12 V industrial systems. |
| RDS(ON) | 19 mΩ @ VGS = 4.5V - Enables <150 mW conduction loss at 4.5 A, critical for thermally limited DC-DC phases. |
| ID (continuous) | 15 A @ TC = +25°C - Supports high-current load switching in compact battery protection circuits. |
| VGS(TH) | 0.4–1.0 V - Ensures turn-on with low-voltage microcontrollers (e.g., 1.8 V GPIO) without level-shifting. |
| Qg | 15 nC @ VGS = 4.5V - Low gate charge reduces driver power and enables >1 MHz switching in synchronous buck converters. |
| tD(ON)/tF | 4.1 ns / 3.2 ns - Minimizes switching transition time, reducing overlap losses in hard-switched topologies. |
| RθJA | 63 °C/W (with 1″² copper) - Enables 2.03 W power dissipation at ambient, supporting higher duty-cycle operation. |
Pinout & Package
U-DFN2020-6 (Type F) is a 2.0 × 2.0 × 0.6 mm leadless surface-mount package with exposed thermal pad and six terminals. The package meets IATF 16949 manufacturing standards and J-STD-020 Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; ESD-protected; requires ≤±12 V drive; low VGS(TH) enables direct MCU interface. |
| 2 (S) | Source | Power return node; tied to PCB ground plane; serves as reference for gate drive and internal body diode cathode. |
| 3 (D) | Drain | Main power output; connected to high-side or low-side switch node; bonded to exposed thermal pad for heat transfer. |
| 4 (S) | Source | Second source terminal; paralleled with Pin 2 to reduce source inductance and improve current sharing in high-di/dt applications. |
| 5 (D) | Drain | Second drain terminal; paralleled with Pin 3 to lower RDS(ON) contribution from bond wire resistance and enhance thermal path. |
| 6 (G) | Gate | Redundant gate connection; improves gate drive impedance balance and mitigates asymmetry in high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 package | 0.6 mm height enables integration into space-constrained modules such as smart battery packs and ADAS camera ECUs. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including HTOL, TC, and ESD testing per JEDEC standards. |
| ESD-protected gate | HBM rating ≥2 kV ensures robustness during assembly and field operation without external gate clamping. |
| Halogen- and antimony-free "Green" construction | Complies with RoHS 3 and automotive chemical content requirements (<900 ppm Br/Cl, <1000 ppm Sb). |
| Thermally enhanced layout | Exposed drain pad and dual drain/source terminals reduce thermal resistance by ~63% vs. standard DFN2020-6. |
Applications
| Battery Protection Circuit | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: Real-time overcurrent and short-circuit protection in 12 V Li-ion battery packs for power tools and e-bikes. IC Role / Device Role / Timing Role: Low-side switch controlling battery discharge path; responds within microseconds to fault conditions via integrated current sensing feedback. Use Value: 19 mΩ RDS(ON) minimizes voltage drop and self-heating during sustained 10–15 A loads, extending pack runtime and thermal margin. | Use Scenario: Load switching for interior lighting, window lift motors, and door lock actuators in modern BCMs. IC Role / Device Role / Timing Role: High-reliability power FET driving inductive loads; withstands load dump transients and reverse battery conditions per ISO 7637-2. Use Value: AEC-Q101 qualification and 30 V VDSS ensure stable operation across automotive battery fluctuations (6–18 V) and transient spikes up to ±40 V. |
| USB-C Power Delivery (PD) Sink | Industrial DC-DC Synchronous Buck Converter |
Use Scenario: Input power path control in USB-C PD sink devices requiring programmable voltage negotiation and overvoltage protection. IC Role / Device Role / Timing Role: Reverse-blocking high-side switch isolating VBUS from system rails during disconnect or fault events. Use Value: Fast tF = 3.2 ns and low Qgd = 2.1 nC enable clean turn-off during hot-plug events, preventing bus voltage collapse or latch-up. | Use Scenario: High-frequency (500 kHz–2 MHz) synchronous rectifier in 12 V to 3.3 V/5 V point-of-load converters for PLC I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency and reduce thermal load. Use Value: 15 nC total gate charge allows efficient drive from standard PWM controllers, achieving >94% efficiency at 6 A output with minimal gate driver loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LFD-7 | Same die, but in U-DFN2020-6 (Type D); no gate protection diode; RDS(ON) = 20 mΩ @ 4.5 V. | Lacks integrated gate protection diode; requires external ESD clamp in noisy environments. | Select when gate protection is implemented externally and cost sensitivity outweighs AEC-Q101 requirement. |
| NTMFS4C08NT1G | 30 V, 17 mΩ @ 4.5 V, SO-8FL package; higher RθJA = 70 °C/W; not AEC-Q101 qualified. | Larger footprint (5.0 × 6.0 mm) and non-automotive qualification limit use to industrial/commercial DC-DC. | Choose for prototyping on through-hole or SO-8 boards where thermal pad access is impractical. |
Compared with DMN3020UFDFQ-13, DMN3020LFD-7 trades gate protection for slightly lower cost, while NTMFS4C08NT1G offers marginally lower RDS(ON) but sacrifices automotive compliance and board-area efficiency-making DMN3020UFDFQ-13 optimal for space- and reliability-critical automotive power stages.
Availability
DMN3020UFDFQ-13 is available at Aetrix Electronics and suitable for battery management systems, automotive body control modules, and USB-C power delivery implementations requiring stable component supply, AEC-Q101 traceability, and consistent U-DFN2020-6 packaging.
Supply support for DMN3020UFDFQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN3020UFDFQ-13 belongs to Diodes' automotive-qualified U-DFN power MOSFET product line, engineered specifically for low-RDS(ON), low-profile switching in safety-critical 12 V/24 V vehicle subsystems.
FAQ
What is the maximum safe operating temperature for DMN3020UFDFQ-13?
The junction temperature must not exceed +150°C under steady-state or pulsed conditions. With RθJA = 63°C/W (1″² copper), the device sustains 2.03 W dissipation at +25°C ambient. Derating is required above +25°C ambient per the transient thermal resistance curve in Figure 14.
Does DMN3020UFDFQ-13 require an external gate resistor?
Yes-a series gate resistor (typically 1–10 Ω) is recommended to dampen ringing and control dV/dt during switching. The device's low Rg = 1.3 Ω and fast tD(ON) = 4.1 ns make it susceptible to oscillation without proper gate drive impedance matching.
Can DMN3020UFDFQ-13 be used in a high-side configuration?
No-it is optimized as a low-side switch. High-side use would require level-shifted gate drive exceeding its ±12 V VGS rating and risks shoot-through due to lack of integrated bootstrap circuitry or dedicated high-side logic.
Is the exposed thermal pad electrically isolated?
No-the exposed pad is internally connected to the drain (D) terminals. It must be soldered to a PCB copper pour tied to the drain net for both thermal and electrical performance; floating or grounded pads cause malfunction or failure.
DMN3020UFDFQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.4A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 8 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1304 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 730mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN3020UFDFQ-13 FAQ
1.How can I place an order for DMN3020UFDFQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3020UFDFQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3020UFDFQ-13 reliable?
The price and inventory of DMN3020UFDFQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3020UFDFQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3020UFDFQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3020UFDFQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3020UFDFQ-13?
DMN3020UFDFQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3020UFDFQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3020UFDFQ-13?
For technical support, including DMN3020UFDFQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3020UFDFQ-13 requirements.
6.How does Aetrix verify that DMN3020UFDFQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3020UFDFQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3020UFDFQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3020UFDFQ-13?
All DMN3020UFDFQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3020UFDFQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3020UFDFQ-13 part is unused and in its original packaging.
Return procedure for DMN3020UFDFQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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