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Diodes Incorporated DMN3021LFDF-13
- Part No.:
- DMN3021LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3021LFDF-13.pdf
- Description:
- MOSFET N-CH 30V 11.8A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,660
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Product details
Overview
DMN3021LFDF-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 15 mΩ RDS(ON) at VGS = 10 V and 20 mΩ at VGS = 4.5 V, with 9.3 A continuous drain current at TA = +25°C. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters.
For engineers reviewing the DMN3021LFDF-13 datasheet, DMN3021LFDF-13 pinout, DMN3021LFDF-13 application, or DMN3021LFDF-13 equivalent, key selection criteria include low-profile 0.6 mm height, 4 mm² PCB footprint, gate threshold voltage range (1.0–2.2 V), fast switching times (tD(ON) = 5.4 ns), and thermal resistance (RΘJA = 64 °C/W with 1-inch² copper plate).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance via minimized gate charge (QG = 6.7 nC at VGS = 4.5 V). Its 0.6 mm profile and U-DFN2020-6 package enable integration into space-constrained power stages.
The device features a low VGS(TH) (1.0–2.2 V), enabling direct drive from 3.3 V or 5 V logic, and supports bidirectional current flow via its intrinsic body diode (VSD = 0.8–1.2 V at IS = 2.2 A). Avalanche-rated (IAS = 18 A, EAS = 16 mJ), it withstands transient energy in inductive switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V/24 V input rail protection and buck converter high-side switching. |
| RDS(ON) | 15 mΩ @ VGS = 10 V - Enables ≤150 mW conduction loss at 10 A, critical for thermally constrained point-of-load regulators. |
| ID (continuous) | 9.3 A @ TA = +25°C - Supports mid-power DC-DC output stages up to ~30 W with standard FR-4 layout. |
| QG | 6.7 nC @ VGS = 4.5 V - Reduces gate driver power demand and enables >1 MHz switching in synchronous buck topologies. |
| RΘJA | 64 °C/W (with 1-inch² copper) - Allows 2.03 W power dissipation before junction exceeds 150°C, enabling higher current operation than standard pad layout. |
| VGS(TH) | 1.0–2.2 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO or PWM controller outputs without level-shifting. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 mm × 2.0 mm × 0.6 mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Primary current return path; connected to ground or low-side reference; electrically tied to exposed thermal pad. |
| 2 (Gate) | Gate terminal (G) | Control input; requires <2.2 V threshold to initiate conduction; low Ciss (706 pF) minimizes driver loading. |
| 3 (Drain) | Drain terminal (D) | High-side power input/output node; handles full load current and withstands 30 V transients. |
| 4 (Source) | Source terminal (S) | Redundant source connection; improves current sharing and thermal spreading across dual-source pins. |
| 5 (Drain) | Drain terminal (D) | Redundant drain connection; reduces package inductance and enhances current handling in high-frequency switching. |
| 6 (Thermal Pad) | Exposed thermal pad | Internally connected to source; must be soldered to PCB copper pour for RΘJA = 64 °C/W thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables stacking under ultra-thin modules (e.g., USB-C PD adapters) where Z-height is limited to <1.0 mm. |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 or PowerPAK® 1212-8, supporting dense multi-phase regulator layouts. |
| Low gate threshold voltage | Guarantees turn-on with 3.3 V logic, eliminating need for external gate drivers in battery-powered MCU-controlled switches. |
| Fast switching speed | tD(ON) = 5.4 ns / tF = 4.7 ns enables >2 MHz operation in GaN-assisted hybrid converters without excessive switching loss. |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Class 3 material declarations and automotive OEM sustainability requirements (e.g., BMW GS95024-3). |
Applications
| Battery Protection Circuit | USB-C Power Delivery Module |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs with integrated fuel gauges. IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path; responds within microseconds to protect against short-circuit faults. Use Value: 20 mΩ RDS(ON) at 4.5 V gate drive ensures <100 mV dropout at 5 A, preserving battery runtime while enabling fast fault response. |
Use Scenario: Synchronous rectification in 20–100 W USB-C PD sink circuits with programmable voltage negotiation. IC Role / Device Role / Timing Role: Secondary-side power switch in buck-boost topology; commutates at 300–600 kHz with minimal dead-time loss. Use Value: 6.7 nC QG and 81 pF Crss reduce gate drive loss and EMI generation, improving efficiency above 94% at 60 W output. |
| Industrial IoT Sensor Node | Automotive Body Control Module (BCM) |
|
Use Scenario: Power gating of BLE/Wi-Fi radios and environmental sensors in battery-operated edge nodes. IC Role / Device Role / Timing Role: High-side power switch controlled by ARM Cortex-M0+ GPIO; toggles on/off in <1 µs during sleep/wake transitions. Use Value: 1.0–2.2 V VGS(TH) allows direct 1.8 V/3.3 V logic control, eliminating level shifters and reducing BOM count by one component. |
Use Scenario: LED headlight dimming and motor actuator drive in non-safety-critical BCM subassemblies. IC Role / Device Role / Timing Role: Low-side driver for 12 V incandescent/LED loads; sustains pulsed currents up to 50 A (IDM) during inrush. Use Value: 16 mJ EAS rating absorbs inductive kickback from solenoid coils, preventing voltage overshoot beyond 30 V without snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFG-7 | RDS(ON) = 25 mΩ @ VGS = 4.5 V; same U-DFN2020-6 package; higher threshold (1.2–2.5 V) | Lower cost but higher conduction loss; suitable only for ≤5 A loads or higher ambient temperatures | Select when thermal margin is ample and gate drive voltage exceeds 4.5 V consistently. |
| AO3414 | RDS(ON) = 21 mΩ @ VGS = 4.5 V; SOT-23 package; RΘJA = 200 °C/W (no thermal pad) | Larger footprint (2.9 mm × 1.3 mm), no exposed pad, unsuitable for >3 A continuous operation | Choose only for prototyping or low-current (<2 A), non-thermal-critical signal-switching roles. |
Compared with DMN3021LFDF-13, DMN3025LFG-7 trades 33% higher RDS(ON) for lower unit cost, while AO3414 sacrifices thermal performance and current capability for legacy package compatibility-neither matches the 15 mΩ/9.3 A/0.6 mm combination in space- and efficiency-constrained designs.
Availability
DMN3021LFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial IoT sensor nodes requiring stable component supply and long-term manufacturability.
Supply support for DMN3021LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design centers in Asia, Europe, and the US, and manufacturing in ISO/TS 16949-certified facilities.
This part belongs to Diodes' Power MOSFET product line, engineered for high-efficiency, low-voltage power conversion in portable, automotive, and industrial applications where size, thermal performance, and gate-drive simplicity are critical.
FAQ
What is the maximum allowable junction temperature for DMN3021LFDF-13?
The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of the silicon die and bond wires. Derating is required above +70°C ambient when using the 1-inch² copper thermal pad layout, where power dissipation drops from 2.03 W at +25°C to 1.30 W at +70°C.
Can DMN3021LFDF-13 be used in avalanche mode repeatedly?
No-it is rated for single-pulse avalanche energy (EAS = 16 mJ) under controlled test conditions (L = 0.1 mH, TJ = +25°C). Repeated avalanche stress causes cumulative damage to the drift region and is not guaranteed for production use. Designers must implement clamp circuits or snubbers to avoid entering avalanche during normal operation.
Is the thermal pad electrically isolated or connected internally?
The exposed thermal pad is internally connected to the source terminal (pin 1 and pin 4), as confirmed by the internal schematic and mechanical drawings. It must be soldered to a PCB copper pour tied to the source net to achieve the 64 °C/W RΘJA rating; floating the pad degrades thermal performance by >100% and risks overheating.
Does DMN3021LFDF-13 meet AEC-Q101 qualification for automotive use?
No-the datasheet explicitly states that AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing require special contact with Diodes Incorporated. Standard DMN3021LFDF-13 is not automotive-qualified; it is intended for commercial and industrial applications only. Automotive-grade variants (e.g., DMN3021LFDFQ-13) carry separate part numbers and qualification documentation.
DMN3021LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 706 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.03W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN3021LFDF-13 FAQ
1.How can I place an order for DMN3021LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3021LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3021LFDF-13 reliable?
The price and inventory of DMN3021LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3021LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN3021LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3021LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3021LFDF-13?
DMN3021LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3021LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3021LFDF-13?
For technical support, including DMN3021LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3021LFDF-13 requirements.
6.How does Aetrix verify that DMN3021LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN3021LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3021LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN3021LFDF-13?
All DMN3021LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3021LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3021LFDF-13 part is unused and in its original packaging.
Return procedure for DMN3021LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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