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Diodes Incorporated DMN3022LDG-13
- Part No.:
- DMN3022LDG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerLDFN
- Datasheet:
-
DMN3022LDG-13.pdf
- Description:
- MOSFET 2N-CH 30V 7.6A PWRDI3333
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
DMN3022LDG-13 from Diodes Incorporated is a dual-channel 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type D) package, featuring Q1 with RDS(ON) = 22 mΩ and Q2 with RDS(ON) = 8 mΩ at VGS = 5 V / ID = 10 A. It serves as a synchronous rectifier and power switch in high-efficiency DC-DC converters, delivering low conduction loss and fast switching for compact power management circuits.
For engineers reviewing the DMN3022LDG-13 datasheet, DMN3022LDG-13 pinout, DMN3022LDG-13 application, or DMN3022LDG-13 equivalent, key selection criteria include channel asymmetry (Q1/Q2 RDS(ON) ratio), gate charge mismatch (QG = 3.7 nC vs. 8 nC), thermal resistance (RθJA = 64 °C/W), and integrated body diode performance (VSD = 0.84 V / 0.78 V).
Technical Context
This dual MOSFET integrates two discrete N-channel devices-Q1 optimized for higher voltage tolerance and lower leakage, Q2 engineered for ultra-low on-resistance-within a single thermally efficient PowerDI3333-8 package. Its asymmetric design enables independent optimization of high-side and low-side switching paths in synchronous buck topologies.
Q1 exhibits VGS(TH) = 1.0–2.1 V and avalanche energy EAS = 28 mJ, while Q2 delivers VGS(TH) = 0.8–1.2 V, Ciss = 996 pF max, and tR/tF = 2.5/2.4 ns. Both channels share common source connection and operate with ±10 V gate drive capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for both channels; defines safe operating range in 24 V input DC-DC stages. |
| RDS(ON) Q1 / Q2 | 22 mΩ / 8 mΩ @ 5 V - Asymmetric on-resistance enables optimized duty-cycle handling: Q2 handles high-current low-side conduction; Q1 manages higher-voltage high-side switching. |
| QG Q1 / Q2 | 3.7 nC / 8 nC @ 4.5 V - Gate charge disparity reflects different switching roles: Q2 requires more drive energy for faster current ramping in low-side position. |
| Ciss Q1 / Q2 | 481 pF / 996 pF - Input capacitance asymmetry supports tailored gate driver sizing: Q2 demands higher peak current to charge larger Ciss. |
| VSD Q1 / Q2 | 0.84 V / 0.78 V @ 8 A - Body diode forward voltage impacts reverse recovery loss during dead-time; lower VSD on Q2 reduces freewheeling conduction loss. |
| TJ Range | −55 to +150 °C - Extended junction temperature rating supports operation in automotive under-hood and industrial power supply environments without derating. |
| RθJA | 64 °C/W - Thermal resistance measured on FR-4 board with 1-inch² copper; determines maximum continuous power dissipation (1.96 W at 25 °C ambient). |
Pinout & Package
Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced plastic case with exposed die clip; UL 94V-0 rated, RoHS and halogen-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (Q1) | Common source terminal for Q1; electrically tied to pin 5–8 via internal substrate connection in dual-channel configuration. |
| 5, 6, 7, 8 | Source (Q2) | Common source terminal for Q2; shares thermal path with Q1 source but isolated electrically per datasheet pin diagram. |
| Pin 1 (top-left corner marker) | Gate (Q1) | Control terminal for Q1; requires ≥1.0 V threshold to initiate conduction; optimized for 4.5–5 V logic-level drive. |
| Pin 5 (bottom-left corner marker) | Gate (Q2) | Control terminal for Q2; lower VGS(TH) (0.8–1.2 V) enables earlier turn-on and tighter timing control in synchronous rectification. |
| Pins 3 & 4 (exposed pad) | Drain (Q1) | Primary current-carrying terminal for Q1; connected to internal die backside; provides low-inductance path for high-frequency switching currents. |
| Pins 7 & 8 (exposed pad) | Drain (Q2) | Primary current-carrying terminal for Q2; separate metallization from Q1 drain; enables independent layout routing for optimal EMI suppression. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric dual-channel architecture | Q1 (22 mΩ) and Q2 (8 mΩ) independently optimized for high-side/low-side roles in synchronous buck converters-reducing total conduction loss by >30% versus matched pairs. |
| 100% production UIS tested | Each unit validated for unclamped inductive switching up to 24 A (Q1) and 43 A (Q2), ensuring robustness against inductive kickback in motor drives and DC-DC transient events. |
| Low gate charge mismatch | QG(Q2)/QG(Q1) ≈ 2.1× aligns with typical high-side/low-side current ratios in 12 V → 3.3 V point-of-load designs-minimizing driver IC complexity. |
| Thermally enhanced PowerDI3333-8 | Exposed die clip reduces RθJC to 8.7 °C/W; enables 1.25 W dissipation at 70 °C ambient-critical for sealed industrial power modules with limited airflow. |
| Green, RoHS-compliant construction | Matte tin annealed terminals over copper leadframe; <900 ppm Br/Cl, <1000 ppm Sb; meets EU Directive 2015/863/EU and MIL-STD-202 solderability requirements. |
Applications
| DC-DC Buck Converter | USB-C Power Delivery |
|---|---|
|
Use Scenario: 24 V input to 5 V/3 A output in industrial PLC power rail. IC Role / Device Role / Timing Role: Q1 functions as high-side switch; Q2 acts as synchronous rectifier; precise gate timing minimizes shoot-through risk. Use Value: Asymmetric RDS(ON) reduces total conduction loss by 0.32 W versus matched 12 mΩ dual MOSFETs-enabling passive cooling in space-constrained enclosures. |
Use Scenario: 20 V input to 9 V/3 A output in portable USB-C PD adapter. IC Role / Device Role / Timing Role: Q2 operates as primary low-side switch; Q1 serves as reverse-polarity protection FET; body diode VSD limits no-load standby loss. Use Value: Q2's 8 mΩ RDS(ON) and 0.78 V VSD cut conduction loss by 42% at 3 A load versus standard 15 mΩ alternatives-extending battery runtime. |
| Point-of-Load Regulator | Automotive Infotainment Supply |
|
Use Scenario: 12 V input to 1.2 V/15 A CPU core supply in network switch ASIC. IC Role / Device Role / Timing Role: Q2 handles high-current low-side path; Q1 manages high-side switching with tight VGS(TH) matching across temperature. Use Value: Q2's 8 mΩ RDS(ON) at 10 A yields 0.8 W conduction loss-37% lower than industry-standard 12.5 mΩ dual MOSFETs-reducing thermal stress on VRM PCB. |
Use Scenario: 12 V battery input to 3.3 V/2 A supply for automotive display controller. IC Role / Device Role / Timing Role: Q1 provides load dump protection; Q2 delivers regulated output; −55 to +150 °C TJ rating ensures reliability under hood temperature cycling. Use Value: 150 °C max junction temperature and 24 mJ Q1 EAS withstand automotive load-dump transients (ISO 7637-2 Pulse 5a) without external TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Matched RDS(ON) = 25 mΩ (both channels); higher QG = 4.5 nC; no Q2-specific low-RDS(ON) optimization. | Suitable for symmetric half-bridge drivers; lacks Q2's 8 mΩ advantage in low-side-heavy topologies. | Select when gate drive simplicity outweighs conduction loss reduction-e.g., in low-power 5 V buck regulators where thermal margin is ample. |
| DMN3028LSD-13 | Matched RDS(ON) = 28 mΩ; higher Ciss = 1.1 nF; same PowerDI3333-8 footprint but no Q2-specific dynamic optimization. | Better suited for cost-sensitive consumer power supplies where efficiency >90% is not mandatory. | Choose only if BOM consolidation with existing 28 mΩ designs is required; avoid in high-current (>5 A) applications due to 35% higher conduction loss than DMN3022LDG-13 Q2. |
Compared with DMN3025LSD-13 and DMN3028LSD-13, DMN3022LDG-13 uniquely delivers asymmetric channel optimization-enabling 22 mΩ/8 mΩ on-resistance pairing that reduces total power loss in buck converters by up to 0.45 W at 10 A, without increasing gate drive complexity or package size.
Availability
DMN3022LDG-13 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and automotive infotainment supplies requiring stable component supply, long-term lifecycle support, and traceable green manufacturing compliance.
Supply support for DMN3022LDG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the US, serving industrial, computing, and automotive markets.
This device belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-density power conversion-emphasizing low RDS(ON), fast switching, and thermally robust packaging for next-generation DC-DC regulation.
FAQ
What is the maximum continuous drain current for each channel at 70°C case temperature?
At TC = +70°C, Q1 supports 12 A continuous drain current and Q2 supports 10 A, per the Absolute Maximum Ratings table. These values reflect thermal derating from the 15 A/12 A ratings at 25°C case temperature, based on the device's RθJC = 8.7 °C/W and package thermal limits.
Can DMN3022LDG-13 be used in a synchronous boost converter topology?
No-DMN3022LDG-13 is configured as a dual N-channel MOSFET with common-source topology and no integrated level-shifting circuitry. Its gate drive requirements (VGS ≥ 4.5 V for full enhancement) and lack of high-side bootstrap capability make it unsuitable for boost configurations requiring floating gate drive.
How does the Q1/Q2 asymmetry affect PCB layout and thermal management?
The asymmetry necessitates independent thermal vias under each exposed drain pad (pins 3/4 for Q1, pins 7/8 for Q2) to prevent cross-heating. Layout must route Q2's high-current path with wider copper to handle its 10 A rating, while Q1's traces can be narrower-reducing overall board area by ~18% versus symmetric dual-MOSFET layouts.
Is the body diode in Q2 suitable for reverse recovery in high-frequency (>1 MHz) operation?
Yes-Q2's tRR = 27.9 ns and QRR = 9.9 nC are specified at di/dt = 300 A/μs, supporting reliable operation up to 2 MHz switching frequencies in synchronous rectification. Its low VSD = 0.78 V further reduces reverse recovery loss compared to standard Schottky alternatives.
DMN3022LDG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerLDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7.6A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA, 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.7nC @ 4.5V, 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 481pF @ 15V, 996pF @ 15V
- Power - Max:
- 1.96W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type D)
DMN3022LDG-13 FAQ
1.How can I place an order for DMN3022LDG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3022LDG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3022LDG-13 reliable?
The price and inventory of DMN3022LDG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3022LDG-13 is usually 5 days.
3.What payment methods are accepted for DMN3022LDG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3022LDG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3022LDG-13?
DMN3022LDG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3022LDG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3022LDG-13?
For technical support, including DMN3022LDG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3022LDG-13 requirements.
6.How does Aetrix verify that DMN3022LDG-13 is sourced from the original manufacturer or authorized distributors?
All DMN3022LDG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3022LDG-13 meets industry standards.
7.What is the process for return or replacement of DMN3022LDG-13?
All DMN3022LDG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3022LDG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3022LDG-13 part is unused and in its original packaging.
Return procedure for DMN3022LDG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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