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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN3022LDG-7

Name: DMN3022LDG-7
Brand: Diodes Incorporated
SKU: DMN3022LDG-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3022LDG-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-PowerLDFN

Datasheet:: DMN3022LDG-7.pdf

Description:: MOSFET 2N-CH 30V 7.6A PWRDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN3022LDG-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a PowerDI3333-8 (Type D) package, featuring Q1 with 22 mΩ R_DS(ON) @ 5 V_GS/10 A and Q2 with 8 mΩ R_DS(ON) @ 5 V_GS/10 A, 30 V BVDSS, and fast switching for synchronous rectification in DC-DC converters.

For engineers reviewing the DMN3022LDG-7 datasheet, DMN3022LDG-7 pinout, DMN3022LDG-7 application, or DMN3022LDG-7 equivalent, this dual MOSFET supports high-efficiency power management where low conduction loss, tight gate charge matching (QG = 2.8–3.7 nC for Q1, 6.1–8 nC for Q2), and robust UIS capability (24 A/28 mJ for Q1, 43 A/92 mJ for Q2) are critical.

Technical Context

This dual MOSFET integrates two independently optimized N-channel channels in one die: Q1 targets higher voltage margin and ruggedness (V_GS(TH) = 1.0–2.1 V), while Q2 delivers ultra-low on-resistance (6.4–8 mΩ) and enhanced transconductance (|Y_FS| = 33 S) for primary-side switching or synchronous rectification.

Its PowerDI3333-8 (Type D) package provides thermally efficient die-clip construction with R_θJC = 8.7 °C/W, enabling high-current operation up to 15 A continuous (Q1) and 12 A (Q2) at T_C = 25 °C, while maintaining low C_iss (370–481 pF for Q1, 766–996 pF for Q2) for clean gate drive.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	30 V - Maximum drain-source blocking voltage for both channels; defines safe operating range in 24 V input systems.
RDS(ON) Q1	22 mΩ @ 5 V_GS, 10 A - Low conduction loss in high-side or load-switch position; enables <1.5 W I²R loss at 10 A.
RDS(ON) Q2	8 mΩ @ 5 V_GS, 10 A - Optimized for low-loss synchronous rectification; reduces forward drop vs. Schottky diodes.
QG Q1 / Q2	3.7 nC / 8 nC - Gate charge values determine driver strength requirements; Q2's higher QG demands robust gate drive for fast turn-on.
tD(OFF) Q1 / Q2	10.8 ns / 17.5 ns - Short off-delay times support >1 MHz switching in buck converters without excessive dead-time loss.
EAS Q1 / Q2	28 mJ / 92 mJ - Avalanche energy rating ensures reliability under inductive switching stress without external snubbers.
RθJA	64 °C/W - Thermal resistance to ambient on FR-4 board; sets maximum power dissipation limit (1.96 W at 25 °C ambient).

Pinout & Package

Package: PowerDI3333-8 (Type D) - surface-mount, thermally enhanced plastic package with exposed die-clip for low R_θJC (8.7 °C/W) and high current handling (up to 15 A per channel).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source Q1	Common source connection for first MOSFET; electrically tied internally; used for low-side return path.
5, 6, 7, 8	Source Q2	Common source connection for second MOSFET; isolated from Q1 source; enables independent channel grounding.
1, 5	Gate Q1 / Q2	Separate gate terminals (Pin 1 = Q1 gate, Pin 5 = Q2 gate); allow independent PWM control of each channel.
3, 4, 6, 7	Drain Q1 / Q2	Drain connections: Pins 3–4 = Q1 drain; Pins 6–7 = Q2 drain; paralleled pins reduce inductance and thermal resistance.

Key Features

Feature	Design Value
100% UIS tested	Guarantees avalanche ruggedness up to 24 A (Q1) and 43 A (Q2) without derating-critical for unclamped inductive loads.
Low R_DS(ON) asymmetry	Q1/Q2 R_DS(ON) ratio ≈ 2.75:1 enables complementary use in half-bridge topologies with matched timing.
Lead-free & Green	Meets RoHS 3, halogen-free (<900 ppm Br/Cl, <1000 ppm Sb), UL 94V-0 rated-compliant for automotive and industrial PCB assembly.
Fast switching	t_R/t_F ≤ 2.5 ns / 2.4 ns (Q2) minimizes transition losses in high-frequency DC-DC stages (>500 kHz).
Thermally optimized	Exposed copper die-clip and 0.044 g mass enable rapid heat extraction-supports 1.25 W continuous at 70 °C ambient.

Applications

DC-DC Buck Converter

USB-C Power Delivery

Use Scenario: High-efficiency 12 V to 5 V/3.3 V step-down conversion in portable electronics.

IC Role / Device Role: Q2 serves as synchronous rectifier; Q1 acts as high-side switch or OR-ing FET.

Use Value: 8 mΩ R_DS(ON) cuts conduction loss by >40% vs. discrete Schottky, improving efficiency from 92% to 95% at 5 A.

Use Scenario: Dual-role power path management in USB-C PD sink applications with programmable voltage rails.

IC Role / Device Role: Q1 and Q2 operate as independent load switches controlling VBUS and auxiliary rails.

Use Value: Independent gate control (Pin 1 & Pin 5) enables precise sequencing and reverse-current blocking per rail.

Industrial PLC I/O Module

LED Driver Current Sink

Use Scenario: Solid-state relay replacement for 24 V digital output channels with overcurrent protection.

IC Role / Device Role: Q1 configured as protected high-side switch; Q2 used for current-sense shunt control.

Use Value: 100% UIS qualification ensures survival during inductive load disconnection transients common in solenoid control.

Use Scenario: Constant-current dimming stage for high-brightness LED strings in architectural lighting.

IC Role / Device Role: Q2 operates as low-side current sink; Q1 handles PWM dimming signal conditioning.

Use Value: 6.4 mΩ R_DS(ON) limits I²R heating to <0.5 W at 1.5 A, eliminating need for heatsink in compact modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	Single-channel 30 V, 2.5 mΩ @ 5 V_GS; no dual configuration; smaller PowerDI3333-8 footprint but lacks Q2 optimization.	Requires two devices for dual-channel function; increases board area and gate drive complexity.	Select only when needing ultra-low R_DS(ON) in single-channel layout with space constraints.
DMN6016LSD-13	60 V BVDSS, 16 mΩ @ 5 V_GS, single-channel; higher voltage rating but higher R_DS(ON) and no Q2 asymmetry.	Suitable for 48 V systems but cannot replicate Q1/Q2 functional split; unsuitable for synchronous rectifier + switch pairing.	Choose only for 48 V input designs requiring higher breakdown margin, not for 24/36 V dual-FET topology.

Compared with DMN3022LDG-7, DMN3025LSD-13 offers lower on-resistance in a single channel but doubles component count and gate drive overhead, while DMN6016LSD-13 trades voltage headroom for reduced efficiency and eliminates the purpose-built Q1/Q2 performance partitioning essential for high-density DC-DC integration.

Availability

DMN3022LDG-7 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMN3022LDG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMN3022LDG-7 belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion where dual-channel integration, thermal performance, and avalanche ruggedness are mandatory design criteria.

FAQ

What is the thermal resistance junction-to-case (RθJC) for DMN3022LDG-7?

The RθJC is 8.7 °C/W, measured from junction to the exposed die-clip on the PowerDI3333-8 (Type D) package. This value is validated per JEDEC JESD51-14 standards using a cold plate method and enables accurate thermal modeling when the die-clip is soldered to a large copper pour.

Can DMN3022LDG-7 be used in a synchronous buck converter as both high-side and low-side switches?

No-DMN3022LDG-7 contains two N-channel MOSFETs only; it lacks a P-channel device required for standard high-side switching. It is designed for configurations where both switches are N-channel with appropriate gate drive (e.g., bootstrapped high-side driver for Q1, ground-referenced drive for Q2).

What is the maximum continuous drain current for each channel at 70°C case temperature?

At T_C = +70 °C, Q1 supports 12 A and Q2 supports 10 A continuous drain current. These ratings are derived from the Safe Operating Area (SOA) curves (Figures 23–24) and assume proper PCB copper area and airflow per the datasheet's thermal test conditions.

Does DMN3022LDG-7 include integrated ESD protection on its gate terminals?

Yes-the device features built-in gate oxide protection rated to ±100 nA gate leakage at ±10 V_GS, verified per HBM testing. However, external Zener clamps are still recommended in high-noise environments to prevent gate overvoltage during hot-plug or transient events.

DMN3022LDG-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerLDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 7.6A (Ta), 15A (Tc)

Rds On (Max) @ Id, Vgs:: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA, 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.7nC @ 4.5V, 8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 481pF @ 15V, 996pF @ 15V

Power - Max:: 1.96W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8 (Type D)

DMN3022LDG-7 FAQ

1.How can I place an order for DMN3022LDG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3022LDG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3022LDG-7 reliable?

The price and inventory of DMN3022LDG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3022LDG-7 is usually 5 days.

3.What payment methods are accepted for DMN3022LDG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3022LDG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3022LDG-7?

DMN3022LDG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3022LDG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3022LDG-7?

For technical support, including DMN3022LDG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3022LDG-7 requirements.

6.How does Aetrix verify that DMN3022LDG-7 is sourced from the original manufacturer or authorized distributors?

All DMN3022LDG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3022LDG-7 meets industry standards.

7.What is the process for return or replacement of DMN3022LDG-7?

All DMN3022LDG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3022LDG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3022LDG-7 part is unused and in its original packaging.

Return procedure for DMN3022LDG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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