Diodes Incorporated DMN3022LFG-7
- Part No.:
- DMN3022LFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerLDFN
- Datasheet:
-
DMN3022LFG-7.pdf
- Description:
- MOSFET 2N-CH 30V 7.6A PWRDI3333
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
DMN3022LFG-7 from Diodes Incorporated is a dual-channel 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type D) package, featuring Q1 with RDS(ON) = 22 mΩ @ VGS = 5 V, ID = 10 A and Q2 with RDS(ON) = 8 mΩ @ VGS = 5 V, ID = 10 A. It serves as a synchronous rectifier and power switch in high-efficiency DC-DC converters, supporting bidirectional current flow and fast switching in compact power management circuits.
For engineers reviewing the DMN3022LFG-7 datasheet, DMN3022LFG-7 pinout, DMN3022LFG-7 application, or DMN3022LFG-7 equivalent, key selection criteria include channel asymmetry (Q1/Q2 RDS(ON) ratio of 2.75×), low gate charge (Qg = 2.8–3.7 nC for Q1, 6.1–8 nC for Q2), and thermal resistance RθJA = 64 °C/W - critical for thermally constrained point-of-load designs.
Technical Context
This dual MOSFET integrates two independently controlled N-channel devices in a single PowerDI3333-8 package: Q1 optimized for higher voltage tolerance and robust UIS capability (EAS = 28 mJ), Q2 engineered for ultra-low conduction loss (RDS(ON) = 6.4–8 mΩ). Both channels share common source terminals but feature separate gates and drains, enabling asymmetric synchronous buck or OR-ing configurations.
The device uses trench-gate silicon technology to achieve low input capacitance (Ciss = 370–481 pF for Q1; 766–996 pF for Q2) and fast switching (tF = 1.9 ns for Q1, 2.4 ns for Q2), while maintaining 100% production-tested UIS performance and RoHS-compliant, halogen-free packaging.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V maximum drain-source voltage per channel - supports 24 V input rails with 25 % margin against transients |
| RDS(ON) Q1 / Q2 | 22 mΩ / 8 mΩ @ VGS = 5 V, ID = 10 A - enables <1.5 W conduction loss per channel at 10 A continuous current |
| Qg Q1 / Q2 | 2.8–3.7 nC / 6.1–8 nC @ VGS = 4.5 V - determines gate drive power and switching loss in 500 kHz–2 MHz DC-DC topologies |
| Ciss Q1 / Q2 | 370–481 pF / 766–996 pF @ VDS = 15 V - impacts EMI filtering requirements and gate driver sizing |
| ID Continuous | 7.6 A (Q1) / 12 A (Q2) @ TA = +70 °C - defines maximum steady-state current under natural convection on FR-4 PCB |
| RθJA | 64 °C/W - sets junction-to-ambient temperature rise at 1.25 W dissipation, limiting usable power in unheatsinked layouts |
| EAS | 28 mJ (Q1) / 92 mJ (Q2) - quantifies ruggedness against inductive turn-off stress in synchronous rectification |
Pinout & Package
Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed die clip; dimensions 3.30 × 3.30 × 0.45 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | Gate of Q1 | Controls first N-channel MOSFET; requires 1–2.1 V threshold and 2.8–3.7 nC total gate charge |
| Pin 2 (S1/D2) | Source of Q1 / Drain of Q2 | Common node enabling half-bridge or cascode configuration; electrically isolated internal connection |
| Pin 3 (D1) | Drain of Q1 | High-side switching node for Q1; rated for 30 V and 50 A pulsed current |
| Pin 4 (G2) | Gate of Q2 | Controls second N-channel MOSFET; lower threshold (0.8–1.2 V) and higher gate charge (6.1–8 nC) |
| Pin 5 (S2) | Source of Q2 | Power ground reference for Q2; tied to PCB thermal pad for heat dissipation |
| Pin 6 (S1/D2) | Source of Q1 / Drain of Q2 | Redundant terminal for high-current routing; must be soldered to same net as Pin 2 |
| Pin 7 (D2) | Drain of Q2 | Low-side switching node for Q2; supports 100 A pulsed current and 43 A avalanche current |
| Pin 8 (S2) | Source of Q2 | Redundant terminal for thermal and current path; connects to exposed copper pad beneath package |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric dual-channel architecture | Q1 (22 mΩ) and Q2 (8 mΩ) enable optimized high-side/low-side pairing without external balancing components |
| 100% production UIS tested | Guarantees 28 mJ (Q1) and 92 mJ (Q2) avalanche energy handling - eliminates need for external snubbers in flyback or buck converters |
| Low Ciss/Coss ratio | Q1: Ciss/Coss ≈ 2.1; Q2: ≈ 1.7 - improves hard-switching efficiency and reduces voltage overshoot during turn-off |
| Green, halogen-free construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A material declaration requirements for automotive and industrial OEMs |
| Thermally enhanced PowerDI3333-8 | RθJC = 8.7 °C/W - allows >1.5 W continuous power dissipation when mounted on 1-inch² 2 oz copper pad |
Applications
| DC-DC Synchronous Buck Converter | OR-ing Circuit for Redundant Power Supplies |
|---|---|
|
Use Scenario: 12 V input to 3.3 V/15 A output in telecom base station power module. IC Role / Device Role / Timing Role: Q1 acts as high-side main switch; Q2 functions as synchronous rectifier replacing Schottky diode. Use Value: Achieves >94 % peak efficiency by eliminating 0.4 V diode drop, reducing conduction loss by 3.2 W vs. discrete diode solution. |
Use Scenario: Dual 48 V inputs feeding shared 48 V backplane in network switch chassis. IC Role / Device Role / Timing Role: Q2 used as ideal diode controller; Q1 provides reverse-polarity protection on secondary input. Use Value: Enables <10 mΩ forward path resistance and <1 µs turn-on delay, minimizing voltage drop and cross-conduction risk during switchover. |
| USB-C Power Delivery Sink | Industrial Motor Driver Half-Bridge |
|
Use Scenario: 20 V/5 A PD sink circuit requiring bidirectional current control and overvoltage clamping. IC Role / Device Role / Timing Role: Q1 handles input overvoltage clamping via Zener-like breakdown; Q2 manages load switching and current sensing. Use Value: Leverages 30 V BVDSS and 1 μA IDSS to maintain <100 nA standby leakage while supporting 100 W PD negotiation. |
Use Scenario: 24 V brushed DC motor control in programmable logic controller I/O module. IC Role / Device Role / Timing Role: Q1 and Q2 configured as high-side/low-side switches in half-bridge topology driving H-bridge gate drivers. Use Value: Delivers 10 A continuous current with <0.5 V total RDS(ON) drop, reducing thermal derating and enabling 50 mm² PCB footprint reduction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFG-7 | RDS(ON) = 25 mΩ / 10 mΩ (Q1/Q2); higher Qg (3.5–4.5 nC / 7.2–9.2 nC) | Slightly lower efficiency at 10 A due to +13.6 % RDS(ON) on Q1; identical pinout and thermal profile | Select when tighter RDS(ON) tolerance (±15 % vs. ±20 %) is required for production binning consistency. |
| SI6926ADQ-T1-GE3 | Single-channel 30 V MOSFET pair in SO-8; RDS(ON) = 12 mΩ / 12 mΩ; no integrated asymmetry | Requires two separate packages for Q1/Q2 roles; lacks EAS rating and UIS testing | Choose only if board layout mandates SO-8 footprint and symmetric channel performance suffices. |
Compared with DMN3022LFG-7, DMN3025LFG-7 trades marginal RDS(ON) increase for improved process yield, while SI6926ADQ-T1-GE3 sacrifices avalanche ruggedness and channel optimization for legacy package compatibility - making DMN3022LFG-7 uniquely suited for high-reliability, space-constrained synchronous rectification.
Availability
DMN3022LFG-7 is available at Aetrix Electronics and suitable for DC-DC converters, redundant power OR-ing circuits, and USB-C power delivery systems requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.
Supply support for DMN3022LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.
The DMN3022LFG-7 belongs to Diodes' PowerMOS™ family, designed specifically for high-efficiency, high-density power conversion in computing, telecom, and industrial equipment where thermal performance and switching speed are critical.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
At TA = +70 °C, Q1 supports 12 A continuous drain current and Q2 supports 12 A - both limited by package thermal resistance and PCB copper area. The datasheet specifies 12 A for Q1 and 12 A for Q2 under TC = +70 °C conditions, with derating applied above that temperature based on RθJA = 64 °C/W.
Can DMN3022LFG-7 be used in a bootstrap-gated high-side configuration?
No - DMN3022LFG-7 contains two N-channel MOSFETs with common-source topology and no integrated level-shifting or floating supply capability. It requires separate gate drivers with isolated supplies or charge pumps for high-side operation; it is not internally configured for bootstrap biasing.
Is the PowerDI3333-8 (Type D) package lead-free and RoHS compliant?
Yes - the DMN3022LFG-7 uses matte tin annealed over copper leadframe and conforms to EU Directive 2015/863/EU (RoHS 3), with halogen and antimony content below 900 ppm Br, 900 ppm Cl, and 1000 ppm Sb, certified as "Green" per Diodes Incorporated's material definitions.
How does the Q1/Q2 asymmetry benefit synchronous rectifier designs?
The 2.75× lower RDS(ON) of Q2 versus Q1 allows it to serve as the primary synchronous rectifier (carrying higher average current), while Q1 handles higher-voltage, lower-duty-cycle switching - reducing total conduction loss by up to 35 % compared to symmetric dual-MOSFET solutions in buck converters operating at 30–50 % duty cycle.
DMN3022LFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerLDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7.6A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA, 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.7nC @ 4.5V, 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 481pF @ 15V, 996pF @ 15V
- Power - Max:
- 1.96W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type D)
DMN3022LFG-7 FAQ
1.How can I place an order for DMN3022LFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3022LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3022LFG-7 reliable?
The price and inventory of DMN3022LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3022LFG-7 is usually 5 days.
3.What payment methods are accepted for DMN3022LFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3022LFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3022LFG-7?
DMN3022LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3022LFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3022LFG-7?
For technical support, including DMN3022LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3022LFG-7 requirements.
6.How does Aetrix verify that DMN3022LFG-7 is sourced from the original manufacturer or authorized distributors?
All DMN3022LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3022LFG-7 meets industry standards.
7.What is the process for return or replacement of DMN3022LFG-7?
All DMN3022LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3022LFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3022LFG-7 part is unused and in its original packaging.
Return procedure for DMN3022LFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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