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Diodes Incorporated DMN3022LFG-7

Part No.:
DMN3022LFG-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerLDFN
Datasheet:
AetrixDMN3022LFG-7.pdf
Description:
MOSFET 2N-CH 30V 7.6A PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,129

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Product details

Overview

DMN3022LFG-7 from Diodes Incorporated is a dual-channel 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type D) package, featuring Q1 with RDS(ON) = 22 mΩ @ VGS = 5 V, ID = 10 A and Q2 with RDS(ON) = 8 mΩ @ VGS = 5 V, ID = 10 A. It serves as a synchronous rectifier and power switch in high-efficiency DC-DC converters, supporting bidirectional current flow and fast switching in compact power management circuits.

For engineers reviewing the DMN3022LFG-7 datasheet, DMN3022LFG-7 pinout, DMN3022LFG-7 application, or DMN3022LFG-7 equivalent, key selection criteria include channel asymmetry (Q1/Q2 RDS(ON) ratio of 2.75×), low gate charge (Qg = 2.8–3.7 nC for Q1, 6.1–8 nC for Q2), and thermal resistance RθJA = 64 °C/W - critical for thermally constrained point-of-load designs.

Technical Context

This dual MOSFET integrates two independently controlled N-channel devices in a single PowerDI3333-8 package: Q1 optimized for higher voltage tolerance and robust UIS capability (EAS = 28 mJ), Q2 engineered for ultra-low conduction loss (RDS(ON) = 6.4–8 mΩ). Both channels share common source terminals but feature separate gates and drains, enabling asymmetric synchronous buck or OR-ing configurations.

The device uses trench-gate silicon technology to achieve low input capacitance (Ciss = 370–481 pF for Q1; 766–996 pF for Q2) and fast switching (tF = 1.9 ns for Q1, 2.4 ns for Q2), while maintaining 100% production-tested UIS performance and RoHS-compliant, halogen-free packaging.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V maximum drain-source voltage per channel - supports 24 V input rails with 25 % margin against transients
RDS(ON) Q1 / Q2 22 mΩ / 8 mΩ @ VGS = 5 V, ID = 10 A - enables <1.5 W conduction loss per channel at 10 A continuous current
Qg Q1 / Q2 2.8–3.7 nC / 6.1–8 nC @ VGS = 4.5 V - determines gate drive power and switching loss in 500 kHz–2 MHz DC-DC topologies
Ciss Q1 / Q2 370–481 pF / 766–996 pF @ VDS = 15 V - impacts EMI filtering requirements and gate driver sizing
ID Continuous 7.6 A (Q1) / 12 A (Q2) @ TA = +70 °C - defines maximum steady-state current under natural convection on FR-4 PCB
RθJA 64 °C/W - sets junction-to-ambient temperature rise at 1.25 W dissipation, limiting usable power in unheatsinked layouts
EAS 28 mJ (Q1) / 92 mJ (Q2) - quantifies ruggedness against inductive turn-off stress in synchronous rectification

Pinout & Package

Package: PowerDI3333-8 (Type D), surface-mount, thermally enhanced with exposed die clip; dimensions 3.30 × 3.30 × 0.45 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G1) Gate of Q1 Controls first N-channel MOSFET; requires 1–2.1 V threshold and 2.8–3.7 nC total gate charge
Pin 2 (S1/D2) Source of Q1 / Drain of Q2 Common node enabling half-bridge or cascode configuration; electrically isolated internal connection
Pin 3 (D1) Drain of Q1 High-side switching node for Q1; rated for 30 V and 50 A pulsed current
Pin 4 (G2) Gate of Q2 Controls second N-channel MOSFET; lower threshold (0.8–1.2 V) and higher gate charge (6.1–8 nC)
Pin 5 (S2) Source of Q2 Power ground reference for Q2; tied to PCB thermal pad for heat dissipation
Pin 6 (S1/D2) Source of Q1 / Drain of Q2 Redundant terminal for high-current routing; must be soldered to same net as Pin 2
Pin 7 (D2) Drain of Q2 Low-side switching node for Q2; supports 100 A pulsed current and 43 A avalanche current
Pin 8 (S2) Source of Q2 Redundant terminal for thermal and current path; connects to exposed copper pad beneath package

Key Features

Feature Design Value
Asymmetric dual-channel architecture Q1 (22 mΩ) and Q2 (8 mΩ) enable optimized high-side/low-side pairing without external balancing components
100% production UIS tested Guarantees 28 mJ (Q1) and 92 mJ (Q2) avalanche energy handling - eliminates need for external snubbers in flyback or buck converters
Low Ciss/Coss ratio Q1: Ciss/Coss ≈ 2.1; Q2: ≈ 1.7 - improves hard-switching efficiency and reduces voltage overshoot during turn-off
Green, halogen-free construction <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A material declaration requirements for automotive and industrial OEMs
Thermally enhanced PowerDI3333-8 RθJC = 8.7 °C/W - allows >1.5 W continuous power dissipation when mounted on 1-inch² 2 oz copper pad

Applications

DC-DC Synchronous Buck Converter OR-ing Circuit for Redundant Power Supplies

Use Scenario: 12 V input to 3.3 V/15 A output in telecom base station power module.

IC Role / Device Role / Timing Role: Q1 acts as high-side main switch; Q2 functions as synchronous rectifier replacing Schottky diode.

Use Value: Achieves >94 % peak efficiency by eliminating 0.4 V diode drop, reducing conduction loss by 3.2 W vs. discrete diode solution.

Use Scenario: Dual 48 V inputs feeding shared 48 V backplane in network switch chassis.

IC Role / Device Role / Timing Role: Q2 used as ideal diode controller; Q1 provides reverse-polarity protection on secondary input.

Use Value: Enables <10 mΩ forward path resistance and <1 µs turn-on delay, minimizing voltage drop and cross-conduction risk during switchover.

USB-C Power Delivery Sink Industrial Motor Driver Half-Bridge

Use Scenario: 20 V/5 A PD sink circuit requiring bidirectional current control and overvoltage clamping.

IC Role / Device Role / Timing Role: Q1 handles input overvoltage clamping via Zener-like breakdown; Q2 manages load switching and current sensing.

Use Value: Leverages 30 V BVDSS and 1 μA IDSS to maintain <100 nA standby leakage while supporting 100 W PD negotiation.

Use Scenario: 24 V brushed DC motor control in programmable logic controller I/O module.

IC Role / Device Role / Timing Role: Q1 and Q2 configured as high-side/low-side switches in half-bridge topology driving H-bridge gate drivers.

Use Value: Delivers 10 A continuous current with <0.5 V total RDS(ON) drop, reducing thermal derating and enabling 50 mm² PCB footprint reduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3025LFG-7 RDS(ON) = 25 mΩ / 10 mΩ (Q1/Q2); higher Qg (3.5–4.5 nC / 7.2–9.2 nC) Slightly lower efficiency at 10 A due to +13.6 % RDS(ON) on Q1; identical pinout and thermal profile Select when tighter RDS(ON) tolerance (±15 % vs. ±20 %) is required for production binning consistency.
SI6926ADQ-T1-GE3 Single-channel 30 V MOSFET pair in SO-8; RDS(ON) = 12 mΩ / 12 mΩ; no integrated asymmetry Requires two separate packages for Q1/Q2 roles; lacks EAS rating and UIS testing Choose only if board layout mandates SO-8 footprint and symmetric channel performance suffices.

Compared with DMN3022LFG-7, DMN3025LFG-7 trades marginal RDS(ON) increase for improved process yield, while SI6926ADQ-T1-GE3 sacrifices avalanche ruggedness and channel optimization for legacy package compatibility - making DMN3022LFG-7 uniquely suited for high-reliability, space-constrained synchronous rectification.

Availability

DMN3022LFG-7 is available at Aetrix Electronics and suitable for DC-DC converters, redundant power OR-ing circuits, and USB-C power delivery systems requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for DMN3022LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.

The DMN3022LFG-7 belongs to Diodes' PowerMOS™ family, designed specifically for high-efficiency, high-density power conversion in computing, telecom, and industrial equipment where thermal performance and switching speed are critical.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At TA = +70 °C, Q1 supports 12 A continuous drain current and Q2 supports 12 A - both limited by package thermal resistance and PCB copper area. The datasheet specifies 12 A for Q1 and 12 A for Q2 under TC = +70 °C conditions, with derating applied above that temperature based on RθJA = 64 °C/W.

Can DMN3022LFG-7 be used in a bootstrap-gated high-side configuration?

No - DMN3022LFG-7 contains two N-channel MOSFETs with common-source topology and no integrated level-shifting or floating supply capability. It requires separate gate drivers with isolated supplies or charge pumps for high-side operation; it is not internally configured for bootstrap biasing.

Is the PowerDI3333-8 (Type D) package lead-free and RoHS compliant?

Yes - the DMN3022LFG-7 uses matte tin annealed over copper leadframe and conforms to EU Directive 2015/863/EU (RoHS 3), with halogen and antimony content below 900 ppm Br, 900 ppm Cl, and 1000 ppm Sb, certified as "Green" per Diodes Incorporated's material definitions.

How does the Q1/Q2 asymmetry benefit synchronous rectifier designs?

The 2.75× lower RDS(ON) of Q2 versus Q1 allows it to serve as the primary synchronous rectifier (carrying higher average current), while Q1 handles higher-voltage, lower-duty-cycle switching - reducing total conduction loss by up to 35 % compared to symmetric dual-MOSFET solutions in buck converters operating at 30–50 % duty cycle.

DMN3022LFG-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerLDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs:
22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:
2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
481pF @ 15V, 996pF @ 15V
Power - Max:
1.96W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8 (Type D)

DMN3022LFG-7 FAQ

1.How can I place an order for DMN3022LFG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3022LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3022LFG-7 reliable?

The price and inventory of DMN3022LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3022LFG-7 is usually 5 days.

3.What payment methods are accepted for DMN3022LFG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3022LFG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3022LFG-7?

DMN3022LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3022LFG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3022LFG-7?

For technical support, including DMN3022LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3022LFG-7 requirements.

6.How does Aetrix verify that DMN3022LFG-7 is sourced from the original manufacturer or authorized distributors?

All DMN3022LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3022LFG-7 meets industry standards.

7.What is the process for return or replacement of DMN3022LFG-7?

All DMN3022LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3022LFG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3022LFG-7 part is unused and in its original packaging.

Return procedure for DMN3022LFG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3022LFG-7 Tags

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