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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3023L-13

Name: DMN3023L-13
Brand: Diodes Incorporated
SKU: DMN3023L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3023L-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3023L-13.pdf

Description:: MOSFET N-CH 30V 6.2A SOT23

Quantity:: RFQ Add To RFQ list

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Inventory:2,199

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Product details

Overview

DMN3023L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 30V V_DS, 25 mΩ R_DS(ON) @ V_GS = 10 V, and 6.2 A continuous drain current at T_A = +25°C. It features low gate threshold (0.8–1.8 V), ESD-protected gate, and AEC-Q101 qualification-designed for high-efficiency load switching in automotive and industrial power management.

For engineers reviewing the DMN3023L-13 datasheet, DMN3023L-13 pinout, DMN3023L-13 application, or DMN3023L-13 equivalent, key selection criteria include R_DS(ON) at 4.5 V (28 mΩ), fast switching (t_D(OFF) = 231 ns), thermal resistance (R_θJA = 97 °C/W with copper pad), and AEC-Q101 reliability validation.

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low on-resistance while maintaining controlled gate charge (Q_g = 18.4 nC @ 10 V) and low Crss (67 pF). Its 0.8–1.8 V V_GS(TH) enables direct drive from 3.3 V and 5 V logic controllers without level shifting.

Thermal performance is defined under two PCB conditions: 97 °C/W R_θJA with 1-inch² copper plate (Note 6), and 144 °C/W on standard FR-4 (Note 5). Body diode forward voltage is specified at 1.2 V @ I_S = 1 A, supporting synchronous rectification and reverse-current blocking roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 24 V automotive and 28 V industrial bus applications.
R_DS(ON)	25 mΩ @ V_GS = 10 V - Enables <150 mW conduction loss at 6.2 A, critical for thermally constrained SOT23 layouts.
I_D	6.2 A @ T_A = +25°C - Continuous current rating with 1-inch² copper pad; derates to 4.9 A at +70°C ambient.
V_GS(TH)	0.8–1.8 V - Ensures reliable turn-on with 3.3 V microcontrollers and avoids false triggering in noisy environments.
C_iss/C_oss/C_rss	873 / 121 / 67 pF @ V_DS = 15 V - Low Crss minimizes Miller-induced shoot-through risk in half-bridge configurations.
t_D(OFF)/t_F	231 ns / 70 ns - Fast turn-off supports >500 kHz DC-DC operation with reduced switching losses.
Q_g	18.4 nC @ V_GS = 10 V - Matches gate drivers with 1–2 A peak output for efficient hard-switching control.

Pinout & Package

Package: SOT23 - surface-mount plastic package with matte tin-annealed terminals, UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.009 g.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for drain-to-source conduction	Internally connected to substrate; used as reference node for gate drive and body diode cathode.
2 (Gate)	Control electrode for channel formation	ESD-protected input requiring <100 pF bypass capacitance near driver IC to suppress ringing.
3 (Drain)	Main power output terminal	Connected to high-side or low-side switch node; requires thermal relief pad per AP02001 layout guidelines.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V	28 mΩ - Enables full-load operation from 5 V logic supplies without gate boosting.
AEC-Q101 qualified	Stress-tested per automotive reliability standards - supports under-hood and ADAS module deployment.
ESD-protected gate	HBM ±2 kV - Eliminates need for external gate protection in production assemblies.
Green compound & RoHS	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets EU ELV and China RoHS requirements.
Low Q_gd/Q_gs ratio	2.5 nC / 2.2 nC - Reduces Miller plateau duration, improving controllability during hard switching.

Applications

Automotive Load Switch

USB Power Delivery Switch

Use Scenario: Power gating of infotainment display backlight and sensor modules in 12 V vehicle systems.

IC Role / Device Role / Timing Role: Low-side switch controlling 5–6 A loads with <10 µs response time to MCU enable signals.

Use Value: 25 mΩ R_DS(ON) limits voltage drop to <150 mV at 6 A, preserving system efficiency and reducing thermal stress on PCB.

Use Scenario: Overcurrent-protected 5 V/3 A USB Type-A port in industrial docking stations.

IC Role / Device Role / Timing Role: High-side power switch with integrated overtemperature shutdown via thermal feedback path.

Use Value: AEC-Q101 qualification ensures robustness against automotive-grade temperature cycling (-40°C to +125°C junction).

DC-DC Synchronous Rectifier

Industrial PLC I/O Driver

Use Scenario: Secondary-side rectification in 12 V → 3.3 V buck converter for FPGA power rails.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 1.2 V V_SD body diode forward voltage and low Q_rr minimize reverse recovery loss during dead-time transitions.

Use Scenario: Driving 24 V solenoid valves and relay coils in programmable logic controller output modules.

IC Role / Device Role / Timing Role: Low-side driver with 44 A pulsed capability (t_p = 380 µs) for inductive kickback handling.

Use Value: 17.5 A I_AS avalanche rating allows safe energy absorption during coil de-energization without snubber circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025L-13	R_DS(ON) = 30 mΩ @ 4.5 V; higher V_GS(TH) (1.0–2.2 V); same SOT23 package	Marginally higher conduction loss; less suitable for 3.3 V gate drive	Prefer when higher V_GS(TH) improves noise immunity in high-EMI PLC environments.
AO3400A	R_DS(ON) = 28 mΩ @ 4.5 V; no AEC-Q101 qualification; C_iss = 1020 pF	Not qualified for automotive use; higher input capacitance increases gate drive power	Select only for cost-sensitive consumer applications where AEC-Q101 and low Crss are non-critical.

Compared with DMN3023L-13, DMN3025L-13 trades lower gate drive sensitivity for marginally improved ruggedness, while AO3400A offers similar R_DS(ON) but lacks automotive qualification and has higher Crss-making DMN3023L-13 optimal for space-constrained, reliability-critical 3.3 V–driven load switches.

Availability

DMN3023L-13 is available at Aetrix Electronics and suitable for automotive load switching, USB PD power control, DC-DC synchronous rectification, and industrial PLC I/O driving requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN3023L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan and China.

The DMN3023L belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for high-reliability, low-voltage power switching in automotive and industrial control systems.

FAQ

What is the maximum continuous drain current for DMN3023L-13 at +70°C ambient?

The DMN3023L-13 supports 4.9 A continuous drain current at T_A = +70°C when mounted on a 1-inch² copper pad (per Note 6). This derating reflects thermal limits imposed by its 97 °C/W R_θJA; on standard FR-4, the rating drops further to 3.7 A due to higher 144 °C/W R_θJA.

Does DMN3023L-13 require external gate protection?

No. The device integrates ESD protection rated to ±2 kV HBM on the gate terminal, eliminating the need for external TVS diodes or series resistors in typical 3.3 V/5 V logic-driven applications. Layout best practice still requires a 100 pF ceramic capacitor placed within 2 mm of the gate pin.

Can DMN3023L-13 be used in a high-side switch configuration?

Yes, but only with appropriate gate drive circuitry. As an N-channel MOSFET, it requires a gate voltage ≥ V_DS + V_GS(TH) to fully enhance. In high-side applications, this necessitates a bootstrap or charge-pump gate driver capable of delivering ≥33 V to the gate relative to source when switching 30 V loads.

Is the SOT23 package of DMN3023L-13 compatible with reflow soldering per J-STD-020?

Yes. The SOT23 package is rated for moisture sensitivity level 1 (MSL-1), meaning it may be stored indefinitely at ≤30°C/60% RH and is compatible with standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without baking. Terminal finish meets MIL-STD-202 Method 208 for solderability.

DMN3023L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 873 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 900mW (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3023L-13 FAQ

1.How can I place an order for DMN3023L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3023L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3023L-13 reliable?

The price and inventory of DMN3023L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3023L-13 is usually 5 days.

3.What payment methods are accepted for DMN3023L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3023L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3023L-13?

DMN3023L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3023L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3023L-13?

For technical support, including DMN3023L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3023L-13 requirements.

6.How does Aetrix verify that DMN3023L-13 is sourced from the original manufacturer or authorized distributors?

All DMN3023L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3023L-13 meets industry standards.

7.What is the process for return or replacement of DMN3023L-13?

All DMN3023L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3023L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3023L-13 part is unused and in its original packaging.

Return procedure for DMN3023L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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