Diodes Incorporated DMN3024LK3-13

Overview

DMN3024LK3-13 from Diodes Incorporated is a 30V, 14.4A N-channel enhancement-mode MOSFET in TO-252 (DPAK) package, featuring 24mΩ R_DS(on) at V_GS = 10V and 39mΩ at V_GS = 4.5V. It serves as a high-efficiency power switch in DC-DC converters and LED backlighting circuits, supporting continuous drain current up to 14.4A at T_A = 25°C.

For engineers reviewing the DMN3024LK3-13 datasheet, DMN3024LK3-13 pinout, DMN3024LK3-13 application, or DMN3024LK3-13 equivalent, key selection criteria include R_DS(on) at low gate drive (4.5V), thermal resistance (R_θJA = 30.8°C/W on 50mm × 50mm 2oz FR4), safe operating area limits, body diode forward voltage (0.82V typ), and gate charge (12.9nC).

Technical Context

This MOSFET employs planar silicon process technology optimized for low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.0–3.0V) enables compatibility with 3.3V and 5V logic-level drivers, and its low Q_g (12.9nC) and Q_gd (2.5nC) support high-frequency operation in synchronous buck topologies.

The device integrates a robust body diode with t_rr = 12ns and Q_rr = 4.8nC, suitable for freewheeling in non-isolated DC-DC stages. Thermal design is supported by validated R_θJL = 2.24°C/W and dual PCB mounting derating curves for both 25mm × 25mm 1oz and 50mm × 50mm 2oz copper layouts.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-ended leadframe with exposed drain pad for thermal dissipation. Dimensions per Diodes Inc. drawing: 6.22mm × 6.73mm × 2.39mm (L × W × H), weight ≈ 0.33g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3024LK3-13, DMN3025LFD-13 offers lower R_DS(on) in a smaller package but sacrifices thermal robustness, while IRLML6344TRPBF trades current capacity and thermal performance for ultra-compact size-neither matches the original's balance of 14.4A handling, 39mΩ logic-level drive, and TO-252 thermal reliability.

Availability

DMN3024LK3-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting systems, and industrial load-switching applications requiring stable component supply across production lifecycles.

Supply support for DMN3024LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This part belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, medium-current power conversion and load management in consumer, industrial, and computing power supplies.

FAQ

What is the maximum gate-source voltage rating for DMN3024LK3-13?

The absolute maximum V_GS is ±20V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 12V max in standard applications, with transient spikes clamped using Zener diodes if driving from higher-voltage sources.

Can DMN3024LK3-13 be used in a high-side switch configuration?

Yes, it can operate as a high-side switch, but requires a gate drive voltage ≥ V_IN + V_GS(th) (typically ≥33V for 30V input). A bootstrap or isolated gate driver is necessary to maintain sufficient V_GS during conduction; the device itself does not integrate level-shifting circuitry.

What is the significance of the "K3" suffix in DMN3024LK3-13?

The "K3" denotes Diodes Incorporated's internal package variant code for the TO-252 (DPAK) configuration with standard leadframe plating and marking layout. It distinguishes this version from other TO-252 variants (e.g., K4) that may differ in lead finish, moisture sensitivity level, or tape-and-reel packaging specifications.

How does the body diode performance affect synchronous rectification use?

With V_SD = 0.82V (typ) and t_rr = 12ns, the intrinsic body diode supports efficient freewheeling during dead-time intervals. However, for optimal efficiency above 2A, external Schottky diodes or complementary MOSFETs are recommended to avoid conduction loss and reverse recovery energy dissipation.