Diodes Incorporated DMN3024LSD-13

Overview

DMN3024LSD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 30V V_DS, 24 mΩ R_DS(on) at V_GS = 10 V, and 7.2 A continuous drain current at T_A = 25°C. It delivers low conduction loss and fast switching for high-efficiency power management in compact DC-DC converters and motor control circuits.

For engineers reviewing the DMN3024LSD-13 datasheet, DMN3024LSD-13 pinout, DMN3024LSD-13 application, or DMN3024LSD-13 equivalent, key selection criteria include dual-N-channel topology, SO-8 thermal performance (R_θJA = 63–100 °C/W), body diode recovery (t_rr = 12 ns), gate charge (Q_g = 12.9 nC @ 10 V), and RoHS-compliant "Green" packaging.

Technical Context

This dual MOSFET integrates two independent N-channel silicon devices in a single SO-8 package with shared thermal path and isolated source terminals. Each channel supports 30 V breakdown, operates with gate threshold voltage of 1.0–3.0 V, and exhibits matched R_DS(on) (24 mΩ @ 10 V) and dynamic parameters including C_iss = 608 pF and Q_gd = 2.5 nC.

The device uses a planar trench-enhanced structure optimized for simultaneous low on-resistance and fast switching. Its body diode features V_SD = 0.82–1.2 V at I_S = 1.7 A and t_rr = 12 ns under 100 A/μs di/dt, enabling efficient synchronous rectification and bidirectional current handling in half-bridge configurations.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin, 3.9 mm × 4.9 mm footprint, 1.75 mm max height), molded green plastic, UL 94V-0 rated, matte tin-plated copper lead frame.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN3024LSD-13, DMN3025LSD-13 offers near-identical performance at lower cost, while SI3457DV-T1-GE3 sacrifices integration and thermal efficiency for smaller footprint-making the DMN3024LSD-13 optimal for space-constrained, thermally demanding dual-switch applications.

Availability

DMN3024LSD-13 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, backlighting, and power management functions requiring stable component supply across production lifecycles.

Supply support for DMN3024LSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN3024LSD-13 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency power conversion in space-constrained consumer, industrial, and computing applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum junction temperature for DMN3024LSD-13?

The absolute maximum operating junction temperature is 150°C, as specified in the Thermal Characteristics table. Derating begins at 25°C ambient, with linear power dissipation limits defined for one active die (2.0 W) and two active die (1.8 W) configurations on standard FR4 PCBs.

Can DMN3024LSD-13 be used in a high-side switch configuration?

Yes-each channel supports high-side operation when driven with appropriate gate bias relative to its source. The independent S1 and S2 terminals enable true high-side switching without shared-source limitations, though external level-shifting circuitry is required for gate drive above 10 V.

Is the body diode suitable for reverse current conduction in synchronous rectification?

Yes-the body diode has V_SD = 0.82–1.2 V at I_S = 1.7 A and t_rr = 12 ns, making it suitable for synchronous rectification in buck and flyback topologies up to 1 MHz. Its low Q_rr (4.8 nC) further reduces recovery loss.

Does DMN3024LSD-13 require special PCB layout considerations for thermal performance?

Yes-optimal thermal performance requires soldering the exposed drain paddle to a minimum 25 mm² copper pour on the top layer, connected via ≥4 thermal vias to inner ground planes. The SO-8 footprint must follow Diodes' recommended pad layout (Document Rev. 3, Page 7) to ensure mechanical reliability and R_θJA ≤ 63 °C/W.