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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3024LSS-13

Name: DMN3024LSS-13
Brand: Diodes Incorporated
SKU: DMN3024LSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3024LSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMN3024LSS-13.pdf

Description:: MOSFET N-CH 30V 6.4A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN3024LSS-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SO-8 package, featuring 24 mΩ R_DS(on) at V_GS = 10 V, 8.5 A continuous drain current, and fast switching (t_D(off) = 16 ns). It serves as a high-efficiency power switch in DC-DC converters and motor control circuits.

For engineers reviewing the DMN3024LSS-13 datasheet, DMN3024LSS-13 pinout, DMN3024LSS-13 application, or DMN3024LSS-13 equivalent, key selection criteria include R_DS(on) at 4.5 V (36 mΩ), body diode forward voltage (0.82 V), thermal resistance (R_θJA = 80 °C/W), and gate charge (Q_g = 12.9 nC at 10 V).

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction loss while maintaining controlled gate charge and output capacitance. Its 30 V V_BR_DSS, 16.5 S transconductance, and 71 pF Crss support stable operation in synchronous buck stages with 12 V input rails.

The device integrates a monolithic body diode with 4.5 A continuous source current rating and 12 ns reverse recovery time, enabling efficient freewheeling in high-frequency switching topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR_DSS	30 V - Maximum blocking voltage before avalanche breakdown; sets upper limit for input voltage in 24 V systems.
R_DS(on) @ 10 V	24 mΩ - Conduction loss of 1.7 W at 8.5 A; enables <1% efficiency drop in 12 V/5 A buck converter.
R_DS(on) @ 4.5 V	36 mΩ - Validated drive level for 3.3 V logic-level gate drivers; supports direct microcontroller interfacing.
Q_g @ 10 V	12.9 nC - Total gate charge determining driver power requirement; compatible with standard 1 A peak gate drivers.
t_r/t_f	3.3 ns / 8 ns - Fast edge rates reduce switching transition losses in >500 kHz SMPS designs.
V_SD	0.82 V - Low body diode forward voltage minimizes conduction loss during dead-time freewheeling.
C_iss	608 pF - Input capacitance defining Miller plateau duration; impacts gate drive timing in hard-switched topologies.

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, RoHS-compliant green molding compound (UL 94V-0).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Power output node; pins 1–5 and 7–8 are internally paralleled to reduce package inductance and thermal resistance (R_θJL = 35 °C/W).
6	Gate (G)	Control terminal; requires ≥10 V for full enhancement; threshold voltage range 1.0–3.0 V ensures reliable turn-on with 3.3 V or 5 V logic.
Source (S)	Source (S)	Reference node for gate drive and current sensing; pin 6 is isolated; source connection is internal to pins 1–5 and 7–8 drain leads.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	36 mΩ enables use with 3.3 V microcontrollers without level-shifting, reducing BOM count in portable power stages.
Fast switching speed	16 ns t_D(off) and 8 ns t_f allow operation up to 1 MHz with minimal overlap loss in synchronous rectification.
Integrated body diode	12 ns t_rr and 4.8 nC Q_rr suppress voltage spikes during commutation, eliminating need for external Schottky in low-power DC-DC.
Thermal performance	R_θJA = 80 °C/W on 25 mm² 1 oz copper enables 1.6 W continuous dissipation without heatsink in space-constrained PCB layouts.

Applications

Motor Control

Backlighting

Use Scenario: H-bridge driver for 12 V brushed DC fan or actuator in industrial HVAC controllers.

IC Role / Device Role / Timing Role: Low-side power switch controlling current direction and PWM duty cycle at 20–50 kHz.

Use Value: 24 mΩ R_DS(on) limits I²R loss to ≤1.7 W at 8.5 A stall current, preventing thermal shutdown during startup surge.

Use Scenario: LED string current regulation in automotive instrument cluster backlighting.

IC Role / Device Role / Timing Role: High-side switch modulating constant-current LED driver output via PWM dimming signal.

Use Value: 36 mΩ R_DS(on) at 4.5 V allows direct drive from MCU GPIO, eliminating gate driver IC and saving board area.

DC-DC Converters

Power Management Functions

Use Scenario: Synchronous rectifier in 12 V to 3.3 V buck converter for FPGA core supply.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to improve efficiency at light-to-full load.

Use Value: 0.82 V V_SD and 12 ns t_rr reduce conduction and recovery losses by 35% vs. discrete 40 V Schottky in 500 kHz design.

Use Scenario: Load switch for USB-powered peripheral enable/disable in embedded gateway devices.

IC Role / Device Role / Timing Role: Controlled power path isolation with soft-start and overcurrent protection.

Use Value: 8.5 A ID rating and 30 V V_BR_DSS support 5 V/3 A USB PD sink applications with margin for inrush current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSS-13	R_DS(on) = 25 mΩ @ 10 V (vs. 24 mΩ); Q_g = 13.5 nC (vs. 12.9 nC); identical SO-8 package.	Marginally higher conduction loss and gate drive energy; otherwise functionally interchangeable.	Select when DMN3024LSS-13 is unavailable; verify thermal margin in high-duty-cycle 8.5 A applications.
SI2302DS-T1-GE3	R_DS(on) = 48 mΩ @ 4.5 V (vs. 36 mΩ); lower ID rating (3.2 A); SOT-23 package.	Not suitable for >4 A loads; limited thermal capability due to smaller package and higher R_θJA.	Only for space-constrained, low-current (<3 A) applications where SO-8 footprint is unacceptable.

Compared with DMN3024LSS-13, DMN3025LSS-13 offers near-identical performance with minor trade-offs in gate charge, while SI2302DS-T1-GE3 sacrifices current handling and thermal robustness for size reduction-making it unsuitable as a drop-in replacement in original design contexts.

Availability

DMN3024LSS-13 is available at Aetrix Electronics and suitable for motor control, backlighting, and DC-DC converter applications requiring stable component supply and long-term industrial availability.

Supply support for DMN3024LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial, computing, and consumer markets.

The DMN3024LSS belongs to Diodes' "Green" MOSFET product line, engineered for high-efficiency power conversion with RoHS compliance, halogen-free materials, and optimized R_DS(on)/Q_g trade-off for 30 V switching applications.

FAQ

What is the maximum continuous drain current for DMN3024LSS-13 at 70°C ambient?

The maximum continuous drain current is 6.8 A at T_A = 70°C with device mounted on 25 mm × 25 mm × 1.6 mm FR4 PCB with 1 oz copper. This derating reflects thermal limitations under real-world board-level conditions-not just junction temperature limits-and assumes still air convection cooling.

Does DMN3024LSS-13 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode rated for 4.5 A continuous source current. Key parameters include forward voltage V_SD = 0.82 V at I_S = 1.7 A, reverse recovery time t_rr = 12 ns, and reverse recovery charge Q_rr = 4.8 nC-enabling efficient freewheeling in synchronous buck and half-bridge topologies.

Can DMN3024LSS-13 be driven directly by a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range (1.0–3.0 V) and guaranteed R_DS(on) = 36 mΩ at V_GS = 4.5 V ensure reliable enhancement with 3.3 V logic. However, full 8.5 A current capability requires V_GS ≥ 10 V; for 3.3 V drive, maximum safe continuous current is ~6.0 A per datasheet test condition.

What is the thermal resistance from junction to ambient (R_θJA) under standard mounting conditions?

R_θJA is 80 °C/W when surface-mounted on a 25 mm × 25 mm × 1.6 mm FR4 PCB with single-sided 1 oz copper in still air. This value applies to steady-state operation; for short pulses (<10 sec), R_θJA improves to 45 °C/W, allowing higher transient current handling.

DMN3024LSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 608 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMN3024LSS-13 FAQ

1.How can I place an order for DMN3024LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3024LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3024LSS-13 reliable?

The price and inventory of DMN3024LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3024LSS-13 is usually 5 days.

3.What payment methods are accepted for DMN3024LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3024LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3024LSS-13?

DMN3024LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3024LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3024LSS-13?

For technical support, including DMN3024LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3024LSS-13 requirements.

6.How does Aetrix verify that DMN3024LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMN3024LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3024LSS-13 meets industry standards.

7.What is the process for return or replacement of DMN3024LSS-13?

All DMN3024LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3024LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3024LSS-13 part is unused and in its original packaging.

Return procedure for DMN3024LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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