Diodes Incorporated DMN3024SFG-13

Overview

DMN3024SFG-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in POWERDI®3333-8 package, optimized for high-efficiency power management with 23 mΩ R_DS(on) at V_GS = 10 V, 7.5 A continuous drain current at T_A = 25°C, and AEC-Q101 qualification for automotive reliability. It serves as a synchronous rectifier or main switch in DC-DC converters and backlighting circuits.

For engineers reviewing the DMN3024SFG-13 datasheet, DMN3024SFG-13 pinout, DMN3024SFG-13 application, or DMN3024SFG-13 equivalent, key selection criteria include R_DS(on) at 4.5 V (33 mΩ), thermal resistance (R_θJA = 58 °C/W with 1-inch² copper), UIS ruggedness, and compact 33% board-area footprint versus SO-8.

Technical Context

This MOSFET employs planar silicon process technology to balance low on-resistance and fast switching performance. Its gate threshold voltage (1.0–2.4 V) enables compatibility with 3.3 V and 5 V logic-level drive, while its 61 pF Crss and 10.5 nC total gate charge (at V_GS = 10 V) support efficient high-frequency operation in buck converters.

The device integrates an intrinsic body diode with 0.69 V forward voltage at 1 A, enabling freewheeling in synchronous rectification topologies. Thermal design leverages the POWERDI3333-8 package's 11 °C/W R_θJC, allowing direct heat transfer to PCB copper without heatsinks in moderate-power applications.

Key Specifications

Pinout & Package

Package: POWERDI3333-8 - surface-mount, thermally enhanced plastic package with exposed drain paddle; 3.3 mm × 3.3 mm footprint, 0.8 mm height, 0.65 mm pitch, RoHS-compliant matte tin finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3024SFG-13, DMN3025SFG-13 trades 5 mΩ higher R_DS(on) for improved gate threshold consistency, while SI2302DS-T1-GE3 sacrifices current capacity and thermal capability for SOT-23 compatibility - neither offers drop-in replacement for 7.5 A, 1.5 W DC-DC switch applications.

Availability

DMN3024SFG-13 is available at Aetrix Electronics and suitable for automotive body control modules, LED backlighting systems, and industrial DC-DC power supplies requiring stable component supply across multi-year production cycles.

Supply support for DMN3024SFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with emphasis on power efficiency, reliability, and automotive-grade qualification.

The DMN3024SFG belongs to Diodes' POWERDI® logic-level MOSFET product line, engineered for high-density, thermally constrained power management in automotive and industrial applications where small footprint and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current at 70°C ambient?

At T_A = 70°C with 1-inch² copper pad, DMN3024SFG-13 supports 6.0 A continuous drain current when V_GS = 10 V. This is derived from the thermal limit of 2.2 W total power dissipation and R_θJA = 58 °C/W, resulting in a 130°C junction rise above ambient - within the −55°C to +150°C operating range.

Is the DMN3024SFG-13 suitable for 3.3 V gate drive?

Yes. With a gate threshold voltage range of 1.0–2.4 V and R_DS(on) = 33 mΩ at V_GS = 4.5 V, the device achieves full enhancement using 3.3 V logic. At 3.3 V, typical R_DS(on) is ~48 mΩ (per Fig. 3 extrapolation), supporting ≤4.5 A continuous current with acceptable thermal margin.

How does the POWERDI3333-8 package improve thermal performance over SO-8?

The POWERDI3333-8 uses a bottom-exposed drain paddle soldered directly to PCB copper, achieving R_θJA = 58 °C/W (vs. ~62 °C/W for SO-8 with same layout). Its 3.3 mm × 3.3 mm footprint also allows denser thermal vias under the paddle, reducing effective R_θJC to 11 °C/W - 30% lower than typical SO-8 equivalents.

Does this MOSFET include integrated ESD protection?

No. DMN3024SFG-13 has no built-in ESD protection circuitry. Its gate oxide is rated for ±25 V V_GS, but system-level ESD protection (e.g., TVS diodes on gate traces) is required per IEC 61000-4-2 Level 4 in automotive environments, especially given its use in exposed interfaces like USB-C PD switches.