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Diodes Incorporated DMN3025LFDF-13
- Part No.:
- DMN3025LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3025LFDF-13.pdf
- Description:
- MOSFET N-CH 30V 9.9A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,299
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Product details
Overview
DMN3025LFDF-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 20.5 mΩ RDS(ON) at VGS = 10 V and 8.3 A continuous drain current at TA = +25°C. It serves as a low-profile power switch in DC-DC converters, load switches, and battery protection circuits.
For engineers reviewing the DMN3025LFDF-13 datasheet, DMN3025LFDF-13 pinout, DMN3025LFDF-13 application, or DMN3025LFDF-13 equivalent, key selection criteria include its 20.5 mΩ on-resistance at 10 V gate drive, 4.5 V logic-level compatibility, 641 pF input capacitance, 13.2 nC total gate charge, and thermal resistance of 62 °C/W under enhanced PCB layout.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance-evidenced by 3.3 ns turn-on delay and 5.3 ns turn-off fall time. Its gate threshold voltage (1.0–2.0 V) enables reliable operation with 3.3 V and 5 V microcontroller outputs.
The device integrates a body diode with 0.70–1.0 V forward voltage at 1 A and supports avalanche energy up to 11 mJ. Thermal design is enabled by a 9.4 °C/W junction-to-case resistance and JEDEC-qualified reliability per AEC-Q standards for high-reliability industrial use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V/24 V rail applications |
| RDS(ON) @ VGS = 10 V | 20.5 mΩ - Enables ≤170 mW conduction loss at 8.3 A |
| RDS(ON) @ VGS = 4.5 V | 30 mΩ - Ensures full enhancement with 3.3 V logic-level drivers |
| ID (TA = +25°C) | 8.3 A - Supports compact power stages without forced cooling |
| Ciss | 641 pF - Low input capacitance reduces gate drive power and EMI |
| Qg @ VGS = 10 V | 13.2 nC - Enables efficient 1–2 MHz switching in synchronous buck converters |
| RθJA (enhanced layout) | 62 °C/W - Allows 2.1 W dissipation with 1-inch² copper pad at +70°C ambient |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 × 2.0 mm footprint, 0.6 mm profile, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source swing; 2.2 Ω internal gate resistance limits ringing |
| Pins 2 & 3 (S) | Source | Power return node; dual-source configuration lowers parasitic inductance and improves thermal spreading |
| Pins 4 & 5 (D) | Drain | Main current path; connected to exposed thermal pad; requires soldered thermal land for RθJA = 62 °C/W |
| Pin 6 (S) | Source | Third source connection; completes low-inductance source loop for high-di/dt switching |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 | 0.6 mm height enables integration into space-constrained portable electronics |
| 4 mm² PCB footprint | Reduces board area vs. SO-8 or SOT-23; compatible with automated placement |
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V, eliminating need for gate boosters in 3.3 V systems |
| Low Qgd/Qg ratio | 2.2/13.2 nC = 0.17 - Improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A "Green" compliance requirements |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Bidirectional overvoltage/overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role: High-side load switch controlling charging/discharging paths with reverse-current blocking. Use Value: 30 mΩ RDS(ON) at 4.5 V gate drive ensures minimal voltage drop during 5 A discharge, preserving battery runtime. | Use Scenario: 5–20 V power path switching in USB-C PD sink applications. IC Role / Device Role: Low-loss, fast-turning power switch enabling dynamic voltage negotiation and fault isolation. Use Value: 13.2 nC Qg and 3.3 ns tD(ON) support <10 µs response to PD contract changes without thermal penalty. |
| DC-DC Synchronous Buck Converter | Industrial Sensor Node Power Switch |
Use Scenario: High-efficiency 12 V to 3.3 V conversion in programmable logic controllers. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses. Use Value: 20.5 mΩ RDS(ON) cuts rectifier loss by >65% vs. 0.4 V Schottky at 6 A, improving full-load efficiency to >94%. | Use Scenario: Remote wireless sensor nodes powered by coin-cell or energy harvesters. IC Role / Device Role: Ultra-low-quiescent-power load switch enabling deep-sleep mode with <1 µA leakage. Use Value: 1 µA IDSS at 30 V ensures <10 nW standby loss, extending 10-year battery life targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Same die in SOT-23-3 package; RDS(ON) = 20.5 mΩ @ 10 V but higher RθJA = 220 °C/W | Limited to ≤1.5 A continuous due to thermal constraints; unsuitable for >500 kHz switching | Select when board space permits larger footprint and thermal relief is impractical |
| AO3400A | 30 V, 26 mΩ @ 10 V, 5.7 A; higher Ciss = 750 pF and Qg = 17 nC | Lower peak current capability and slower switching increase losses above 1 MHz | Choose only if cost sensitivity outweighs efficiency and size requirements |
Compared with DMN3025LSD-13 and AO3400A, DMN3025LFDF-13 delivers superior thermal performance (62 vs. 220/150 °C/W), smaller footprint (4 vs. 10/6 mm²), and lower switching losses-making it optimal for high-density, high-frequency power management where board area and efficiency are critical.
Availability
DMN3025LFDF-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and DC-DC synchronous buck converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for DMN3025LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN3025LFDF belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power switching in portable, industrial, and automotive-qualified systems.
FAQ
What is the maximum safe operating temperature for DMN3025LFDF-13?
The device has a rated junction temperature range of –55°C to +150°C. Under continuous operation with the recommended 1-inch² copper pad, it sustains 2.1 W power dissipation at +70°C ambient, corresponding to a maximum junction temperature of +150°C. Derating is required above +70°C ambient per the RθJA = 62 °C/W curve.
Does DMN3025LFDF-13 require a gate resistor for stability?
A gate resistor of 1–10 Ω is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 2.2 Ω intrinsic gate resistance and 641 pF Ciss. This prevents false turn-on during fast dv/dt events and ensures clean switching in high-frequency buck regulators.
Can DMN3025LFDF-13 be used in automotive applications?
The standard DMN3025LFDF-13 is not AEC-Q200 qualified. For automotive use, Diodes offers the Q-suffix variant DMN3025LFDFQ-13, which is AEC-Q200 qualified, PPAP-capable, and manufactured in IATF 16949-certified facilities-available separately with full change control documentation.
How does the dual-source/dual-drain pinout improve performance?
The U-DFN2020-6 (Type F) layout places two source pins (2 & 3) and two drain pins (4 & 5) to minimize loop inductance in high-di/dt switching. This reduces voltage overshoot during turn-off and improves EMI behavior, especially critical in 1–2 MHz DC-DC converters where parasitic inductance directly impacts efficiency and noise.
DMN3025LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 641 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN3025LFDF-13 FAQ
1.How can I place an order for DMN3025LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3025LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3025LFDF-13 reliable?
The price and inventory of DMN3025LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3025LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN3025LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3025LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3025LFDF-13?
DMN3025LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3025LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3025LFDF-13?
For technical support, including DMN3025LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3025LFDF-13 requirements.
6.How does Aetrix verify that DMN3025LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN3025LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3025LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN3025LFDF-13?
All DMN3025LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3025LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3025LFDF-13 part is unused and in its original packaging.
Return procedure for DMN3025LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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