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Diodes Incorporated DMN3025LFDF-7
- Part No.:
- DMN3025LFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN3025LFDF-7.pdf
- Description:
- MOSFET N-CH 30V 9.9A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,882
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Product details
Overview
DMN3025LFDF-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 20.5 mΩ RDS(ON) at VGS = 10 V and 30 mΩ at VGS = 4.5 V, rated for 8.3 A continuous drain current at TA = +25°C, and optimized for high-efficiency power management in space-constrained DC-DC converters and load switches.
For engineers reviewing the DMN3025LFDF-7 datasheet, DMN3025LFDF-7 pinout, DMN3025LFDF-7 application, or DMN3025LFDF-7 equivalent, key selection criteria include low-profile 0.6 mm height, 4 mm² PCB footprint, fast switching (tD(ON) = 3.3 ns, tF = 5.3 ns), low input capacitance (Ciss = 641 pF), and JEDEC-qualified reliability for industrial and consumer power stages.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 13.2 nC at VGS = 10 V) and low Crss (50 pF), enabling efficient operation in synchronous buck converters and battery protection circuits. Its VGS(TH) of 1.0–2.0 V supports direct drive from 3.3 V and 5 V logic.
The device integrates a body diode with VSD = 0.70–1.0 V at IS = 1 A and exhibits robust avalanche capability (EAS = 11 mJ, IAS = 15 A), supporting unidirectional energy recovery in inductive switching applications without external freewheeling diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V/24 V rail-level power switching |
| RDS(ON) @ VGS = 10 V | 20.5 mΩ - Enables ≤170 mW conduction loss at 8.3 A, critical for thermal budget in sealed enclosures |
| RDS(ON) @ VGS = 4.5 V | 30 mΩ - Ensures full enhancement under 5 V logic drive, eliminating need for gate boosters |
| Qg @ VGS = 10 V | 13.2 nC - Supports >1 MHz switching in compact buck regulators with minimal gate driver power demand |
| Ciss | 641 pF - Reduces Miller-induced shoot-through risk and eases EMI filter design in high-frequency SMPS |
| RθJA (steady-state) | 62 °C/W - Achieved with 1-inch² copper pad; allows 2.1 W dissipation at TA = +25°C without forced cooling |
| Package | U-DFN2020-6 (Type F) - 2.0 × 2.0 × 0.6 mm, 0.65 mm pitch, NiPdAu-plated terminals for reliable reflow soldering |
Pinout & Package
U-DFN2020-6 (Type F) is a bottom-exposed thermal pad, 6-terminal leadless package with 0.65 mm pitch and 0.6 mm profile. The exposed die pad enhances thermal performance and must be soldered to a dedicated PCB thermal plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V swing; threshold 1.0–2.0 V enables 3.3 V MCU compatibility |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in low-side switch configuration |
| 3 (D) | Drain | High-side connection point; carries full load current and withstands 30 V transients |
| 4 (S) | Source | Second source terminal-electrically common with Pin 2; improves current sharing and reduces parasitic inductance |
| 5 (D) | Drain | Second drain terminal-electrically common with Pin 3; lowers RDS(ON) and thermal resistance via dual-path layout |
| 6 (EP) | Exposed Pad | Thermal and electrical connection to PCB ground plane; mandatory for achieving RθJA = 62 °C/W rating |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile 0.6 mm height | Enables integration into ultra-thin portable electronics (e.g., wearables, USB-C PD adapters) where Z-height is constrained |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 or PowerPAK® 1212-8, accelerating miniaturization of multi-phase VRMs |
| JEDEC-qualified reliability | Meets AEC-Q200 stress test requirements for temperature cycling, HAST, and bias-HAST-validating suitability for industrial control modules |
| Halogen- and antimony-free "Green" construction | Contains <900 ppm Br, <900 ppm Cl, <1000 ppm Sb-complies with IPC-1752A Class 2 reporting and EU EcoDesign directives |
| NiPdAu-plated terminals | Ensures solderability after 168-hour 85°C/85% RH storage and eliminates tin whisker risk in long-life deployments |
Applications
| USB-C Power Delivery Switch | Smartphone Battery Protection |
|---|---|
Use Scenario: Bidirectional 20 V/5 A power path switching between USB-C port and battery in dual-role devices. IC Role / Device Role / Timing Role: Low-side load switch controlling battery charge/discharge direction with reverse-current blocking. Use Value: 30 mΩ RDS(ON) at 4.5 V gate drive minimizes voltage drop during 5 A discharge, preserving system efficiency above 98.5%. |
Use Scenario: Overcurrent and short-circuit protection in lithium-ion battery packs with integrated fuel gauging. IC Role / Device Role / Timing Role: Primary protection FET in charge/discharge path, triggered by battery management IC fault signals. Use Value: Fast 5.3 ns fall time ensures sub-100 ns fault response, preventing cell damage during 100 A surge events. |
| Industrial DC-DC Converter | LED Driver High-Side Switch |
Use Scenario: Synchronous rectifier in 12 V input, 3.3 V/10 A output buck converter for PLC I/O modules. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 500 kHz with 13.2 nC gate charge. Use Value: 641 pF Ciss and 50 pF Crss enable clean zero-voltage switching transitions, reducing switching losses by 22% vs. legacy DFN-8 devices. |
Use Scenario: Constant-current LED string control in automotive interior lighting with PWM dimming up to 20 kHz. IC Role / Device Role / Timing Role: High-side current sink switch driven by microcontroller GPIO with integrated current sense feedback. Use Value: 0.6 mm profile allows placement directly beneath LED arrays on 2-layer boards, eliminating vertical stacking constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFG-7 | Same die, but in U-DFN2020-6 (Type G) package with different pinout (G-D-S-D-S-G) and no exposed thermal pad | Lacks thermal pad; RθJA degrades to 173 °C/W-unsuitable for >0.5 W continuous dissipation | Select only for cost-sensitive, low-power (<0.3 W) logic-level switching where thermal headroom is abundant |
| AO3400A | Higher RDS(ON) (28 mΩ @ 10 V), larger 2.9 × 2.8 mm SOT-23 package, Qg = 12 nC | Lower power density and slower switching (tF = 12 ns); not qualified to JEDEC high-reliability standards | Acceptable for non-critical consumer accessories but not for industrial or automotive-adjacent designs requiring lifetime validation |
Compared with DMN3025LFDF-7, DMN3025LFG-7 sacrifices thermal performance for pinout flexibility, while AO3400A trades size and reliability for broader distributor availability-making DMN3025LFDF-7 the optimal choice for thermally demanding, space-constrained, and reliability-critical power stages.
Availability
DMN3025LFDF-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, smartphone battery protection circuits, industrial DC-DC converters, and LED driver high-side switches requiring stable component supply across production lifecycles.
Supply support for DMN3025LFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' "PowerMOS™" product line, engineered specifically for high-efficiency, low-footprint power conversion in portable, industrial, and automotive-adjacent applications where thermal density and logic-level drive are critical.
FAQ
What is the maximum continuous drain current for DMN3025LFDF-7 at 70°C ambient?
The maximum continuous drain current is 6.6 A at TA = +70°C with standard FR-4 PCB mounting and 1-inch² copper pad. This rating assumes steady-state thermal equilibrium and accounts for derating due to increased RDS(ON) and reduced power dissipation (PD = 1.3 W). Operation beyond this requires active cooling or reduced duty cycle.
Does DMN3025LFDF-7 require a gate resistor for typical 3.3 V MCU drive?
No external gate resistor is required for basic on/off switching with 3.3 V microcontrollers, as VGS(TH) (1.0–2.0 V) ensures full enhancement. However, a 10 Ω series resistor is recommended to dampen ringing during high-speed PWM operation (>500 kHz) and reduce EMI from rapid dV/dt edges.
Can DMN3025LFDF-7 be used in avalanche mode for inductive load switching?
Yes-it is rated for 15 A single-pulse avalanche current and 11 mJ avalanche energy (L = 0.1 mH), validated per JEDEC JESD24-1. This enables safe operation in relay drivers or solenoid controls without external snubbers, provided pulse repetition and duty cycle maintain junction temperature below 150°C.
Is the exposed thermal pad electrically isolated or connected internally?
The exposed pad (Pin 6) is electrically connected to the source terminals (Pins 2 and 4) and must be soldered to a PCB ground plane. It is not isolated-using it as a floating thermal slug violates the device's thermal model and voids the RθJA = 62 °C/W specification.
DMN3025LFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 641 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN3025LFDF-7 FAQ
1.How can I place an order for DMN3025LFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3025LFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3025LFDF-7 reliable?
The price and inventory of DMN3025LFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3025LFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN3025LFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3025LFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3025LFDF-7?
DMN3025LFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3025LFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3025LFDF-7?
For technical support, including DMN3025LFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3025LFDF-7 requirements.
6.How does Aetrix verify that DMN3025LFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN3025LFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3025LFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN3025LFDF-7?
All DMN3025LFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3025LFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3025LFDF-7 part is unused and in its original packaging.
Return procedure for DMN3025LFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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