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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3025LFV-7

Name: DMN3025LFV-7
Brand: Diodes Incorporated
SKU: DMN3025LFV-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3025LFV-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN3025LFV-7.pdf

Description:: MOSFET N-CH 30V 25A POWERDI3333

Quantity:: RFQ Add To RFQ list

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Inventory:4,991

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Product details

Overview

DMN3025LFV-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 25A continuous drain current at TC = +25°C, 18mΩ RDS(ON) @ VGS = 10V, and 30mΩ @ VGS = 4.5V. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMN3025LFV-7 datasheet, DMN3025LFV-7 pinout, DMN3025LFV-7 application, or DMN3025LFV-7 equivalent, this device is selected for low on-resistance, thermally efficient small-form-factor switching in space-constrained power management designs requiring <30V operation and >20A load capability at 4.5V gate drive.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining fast switching characteristics: tD(ON) = 3.9ns, tR = 4.2ns, Qg = 9.8nC @ VGS = 10V, and Crss = 57pF. Its body diode supports synchronous rectification with tRR = 5.6ns and QRR = 2.6nC under IF = 12A, di/dt = 100A/μs conditions.

The device operates across –55°C to +150°C junction temperature range, with RθJC = 4.5°C/W enabling effective thermal transfer from junction to exposed drain pad. Its SOA curve supports single-pulse operation up to 55A at 10µs, constrained by RDS(ON) limit at DC and thermal limits at longer durations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage before avalanche conduction; defines upper rail limit in buck converter high-side or low-side switch applications.
R_DS(ON)	18mΩ @ V_GS = 10V - Enables <0.45W conduction loss at 15A, critical for efficiency in 12V input DC-DC stages.
I_D (Continuous)	25A @ T_C = +25°C - Sustained current capability when mounted on thermally optimized PCB with 2oz copper and thermal bias.
Q_g	9.8nC @ V_GS = 10V - Determines gate driver current requirement (~1mA average at 100kHz switching); enables fast turn-on with low drive loss.
t_RR	5.6ns - Ultra-fast body diode recovery minimizes shoot-through risk and reduces switching losses in synchronous rectifier configurations.
R_θJC	4.5°C/W - Confirms direct thermal path from die to exposed drain pad; allows accurate junction temperature estimation using case temperature measurement.

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30mm × 3.30mm × 0.80mm (L × W × H), footprint occupies 33% of SO-8 area.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Seven parallel internal drain connections tied to exposed metal pad; primary current path and thermal conduction path to PCB.
8	Source (S)	Single-source terminal; connects to ground or low-side return path; used for current sensing and gate drive reference.
-	Gate (G)	Terminal 8 is source-only; gate is connected internally to leadframe pin 8 via bond wire - confirmed by top-view marking diagram and mechanical drawing showing G adjacent to S on left side (pin 8 = S, pin 7 = G per standard PowerDI3333-8 Type UX pinout).

Key Features

Feature	Design Value
Low R_DS(ON) @ 4.5V	30mΩ enables full-load operation from 5V logic-level gate drivers without level-shifting, reducing BOM count in USB-powered or battery-fed systems.
Thermally optimized package	PowerDI3333-8's R_θJC = 4.5°C/W allows 2.2W dissipation at T_C = +70°C - double the power handling of comparable SO-8 MOSFETs under identical board conditions.
Fast body diode recovery	t_RR = 5.6ns and Q_RR = 2.6nC minimize reverse recovery loss and EMI in hard-switched synchronous rectifiers.
Green construction	Halogen- and antimony-free, lead-free, RoHS-compliant molding compound (<900ppm Br, <900ppm Cl, <1000ppm Sb) meets IPC-1752A Tier 1 reporting requirements.

Applications

LED Backlighting

Point-of-Load DC-DC Converter

Use Scenario: Driving white LED strings in LCD panel backlight units with PWM dimming at 1–20kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier and current sink switch controlling LED cathode current.

Use Value: 18mΩ R_DS(ON) limits I²R loss to <0.4W at 4.5A peak, enabling compact thermal design without heatsink in slim-panel form factors.

Use Scenario: High-current output stage in 12V-to-3.3V buck converter powering FPGA core rails.

IC Role / Device Role / Timing Role: Power switch in synchronous buck topology operating at 500kHz–1MHz.

Use Value: 9.8nC total gate charge and 57pF Crss support clean 10ns-scale switching edges, reducing overlap loss and improving efficiency above 92% at 15A load.

USB-C Power Delivery Sink

Industrial Motor Driver Half-Bridge

Use Scenario: Input protection and load switch in USB-C PD 3.0 compliant portable devices accepting up to 20V/5A input.

IC Role / Device Role / Timing Role: Reverse-voltage and overcurrent protected high-side power switch.

Use Value: 30V V_DSS and ±20V V_GSS rating ensure robustness against 20V PD transients and gate drive overshoot during hot-plug events.

Use Scenario: Low-side switch in 24V brushed DC motor control module with PWM frequency ≤20kHz.

IC Role / Device Role / Timing Role: Current-controlled power stage with integrated body diode freewheeling path.

Use Value: 14A avalanche current rating (I_AS) and 9.8mJ E_AS withstand inductive kickback without external snubber in open-loop motor drives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LFG-7	Same die, identical R_DS(ON), Q_g, and SOA; differs only in tape-and-reel packaging (3,000 vs. 2,000 units) and date-code marking format.	No functional difference; suitable for identical applications including DC-DC and backlighting.	Select based on volume procurement needs and line-side reel capacity - no electrical or thermal requalification required.
NTMFS4C02NT1G	Higher R_DS(ON) (2.2mΩ @ 10V, but rated only at 30A; actual 18mΩ spec at 25A matches DMN3025LFV-7), larger PowerTDFN-8 package (3.3×3.3mm same footprint but different pad layout), higher Q_g (12.5nC).	Requires PCB redesign due to non-identical thermal pad geometry and solder mask opening; not drop-in compatible.	Prefer DMN3025LFV-7 where existing PowerDI3333-8 layout is fixed; NTMFS4C02NT1G offers marginally better R_DS(ON) only if board revision is feasible.

Compared with DMN3025LFV-7, DMN3025LFG-7 offers identical performance in a different reel size, while NTMFS4C02NT1G provides marginally lower R_DS(ON) but demands layout changes and increases gate drive demand - making DMN3025LFV-7 optimal for cost-sensitive, space-constrained, and layout-locked designs.

Availability

DMN3025LFV-7 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC converters, and USB-C power delivery sink applications requiring stable component supply, consistent thermal performance, and RoHS-compliant manufacturing.

Supply support for DMN3025LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN3025LFV-7 belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in consumer, computing, and industrial applications where low R_DS(ON), fast switching, and thermally robust packaging are essential.

FAQ

What is the maximum continuous drain current for DMN3025LFV-7 at 70°C case temperature?

The datasheet specifies 20A continuous drain current at TC = +70°C with appropriate PCB thermal design (2oz copper, thermal bias). This reflects derating from 25A at 25°C due to junction-to-case thermal resistance and ambient thermal constraints. Operation beyond this requires verification of TJ ≤ 150°C using RθJC = 4.5°C/W and measured TC.

Is DMN3025LFV-7 suitable for use as a high-side switch with 12V gate drive?

Yes - its VGS(th) range of 1.0–2.0V and RDS(ON) of 18mΩ @ VGS = 10V confirm reliable enhancement-mode turn-on with standard 12V logic-level gate drivers. However, high-side configuration requires a floating gate driver or charge pump; the device itself does not integrate level-shifting circuitry.

Does DMN3025LFV-7 have avalanche ruggedness rated for inductive switching?

Yes - it is rated for 14A single-pulse avalanche current (IAS) and 9.8mJ avalanche energy (EAS) with L = 0.1mH. These values are validated per JEDEC standards and support safe operation in inductive load switching such as motor drives and relay control without external clamping diodes.

What is the recommended PCB pad layout for thermal performance?

Diodes recommends a minimum 1-inch square 2oz copper thermal pad connected to the exposed drain terminals (pins 1–7), with thermal vias spaced ≤1.2mm apart and filled or capped. The exact dimensions (X = 0.650mm, Y = 0.700mm, etc.) are specified in the PowerDI3333-8 Type UX outline drawing DS39950 page 6.

DMN3025LFV-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 900mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8 (Type UX)

DMN3025LFV-7 FAQ

1.How can I place an order for DMN3025LFV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3025LFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3025LFV-7 reliable?

The price and inventory of DMN3025LFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3025LFV-7 is usually 5 days.

3.What payment methods are accepted for DMN3025LFV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3025LFV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3025LFV-7?

DMN3025LFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3025LFV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3025LFV-7?

For technical support, including DMN3025LFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3025LFV-7 requirements.

6.How does Aetrix verify that DMN3025LFV-7 is sourced from the original manufacturer or authorized distributors?

All DMN3025LFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3025LFV-7 meets industry standards.

7.What is the process for return or replacement of DMN3025LFV-7?

All DMN3025LFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3025LFV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3025LFV-7 part is unused and in its original packaging.

Return procedure for DMN3025LFV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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