Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN3025LSS-13

Part No.:
DMN3025LSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMN3025LSS-13.pdf
Description:
MOSFET N CH 30V 7.2A 8-SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,486

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN3025LSS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 30V V(BR)DSS, 20mΩ RDS(ON) @ 10V VGS, and 7.2A continuous drain current at +25°C. It delivers low conduction loss and fast switching in DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMN3025LSS-13 datasheet, DMN3025LSS-13 pinout, DMN3025LSS-13 application, or DMN3025LSS-13 equivalent, key selection criteria include on-resistance vs. gate voltage, thermal resistance (RθJA = 73°C/W), avalanche energy rating (EAS = 10.5mJ), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining robust switching performance. Its 4.5V-rated on-resistance (31mΩ) supports 3.3V/5V logic-level drive in synchronous buck stages, and its low Ciss (641pF) and Qg (13.2nC @ 10V) enable efficient high-frequency operation up to 1MHz.

The device integrates a body diode with VF = 0.7–1.0V at 1A and supports repetitive avalanche operation (IAS = 14.5A, EAS = 10.5mJ). Thermal design is enabled by SO-8 package characteristics: RθJA = 73°C/W (with 1-inch² copper), and operation across –55°C to +150°C junction temperature range.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS30V - maximum blocking voltage before avalanche; suitable for 24V rail and 12V input DC-DC stages
RDS(ON)20mΩ @ VGS = 10V - enables <145mW conduction loss at 7.2A; critical for thermal budget in compact power stages
ID (continuous)7.2A @ TA = +25°C - defines max steady-state load current without heatsink under standard FR-4 layout
Qg13.2nC @ VGS = 10V - determines gate driver power requirement and switching transition time in hard-switched topologies
EAS10.5mJ - quantifies single-pulse avalanche energy handling; supports inductive load turn-off safety margin
RθJA73°C/W - thermal resistance with 1-inch² copper; used to calculate junction temperature rise under real PCB layout conditions
AEC-Q101Qualified - confirms reliability for automotive power modules, including temperature cycling and HTRB stress testing

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), molded green plastic, UL 94V-0 rated, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source (S)Common source connection for internal parallel FET dies; low-inductance return path for high di/dt currents
5, 6, 7, 8Drain (D)Power output node tied to internal drain metallization; connects to heat-spreading copper pour on PCB
Gate (pin 1 of internal schematic, labeled "G" in top view)Control inputSingle gate terminal accepting 0–20V drive; requires external series resistor (RG ≈ 6Ω typical) to damp ringing

Key Features

FeatureDesign Value
Low RDS(ON) @ 4.5V31mΩ - enables direct drive from 3.3V microcontrollers in battery-powered DC-DC regulators
Low Ciss641pF - reduces gate charge demand and improves efficiency in high-frequency (>500kHz) PWM applications
Fast switchingtD(on) = 3.3ns, tf = 5.3ns - minimizes overlap loss in synchronous rectification and half-bridge configurations
AEC-Q101 qualifiedValidated for automotive ambient temperatures (–40°C to +125°C case) and lifetime reliability per JEDEC standards
Green packagingHalogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); compliant with EU RoHS 2 and JESD201A Class 2

Applications

LED BacklightingPoint-of-Load DC-DC Converter

Use Scenario: Driving white LED strings in automotive instrument clusters and infotainment displays using constant-current boost topology.

IC Role / Device Role: High-side switch controlling LED current path; operates in PWM dimming mode at 1–20kHz.

Use Value: Low RDS(ON) minimizes power loss in high-current (5–7A) backlight drivers; fast turn-off prevents LED ghosting during rapid dimming transitions.

Use Scenario: Synchronous rectifier in 12V-to-3.3V/5V buck converter for industrial PLC I/O modules.

IC Role / Device Role: Low-side power switch in synchronous buck stage; driven by dedicated gate controller (e.g., MP6540).

Use Value: 31mΩ RDS(ON) @ 4.5V ensures >92% efficiency at 5A load; SO-8 thermal pad allows direct PCB copper cooling without heatsink.

Automotive Body Control ModuleUSB-C Power Delivery Load Switch

Use Scenario: Power distribution switch for solenoid valves and relays in BCMs, requiring fault-tolerant overcurrent protection.

IC Role / Device Role: Protected high-side load switch; used with external current-sense amplifier and MCU-based protection logic.

Use Value: AEC-Q101 qualification ensures operation at 125°C ambient; 14.5A avalanche current withstands inductive kickback from 24V solenoids.

Use Scenario: Inrush current limiting and hot-swap control for USB-C PD sink ports in portable medical devices.

IC Role / Device Role: Low-RDS(ON) pass element in discrete load switch circuit with RC gate timing and OVP clamping.

Use Value: 20mΩ on-resistance limits voltage drop to <100mV at 5A; SO-8 footprint enables compact 2-layer PCB layout with minimal trace inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LSD-13Same die, different marking; identical electrical specs and SO-8 packageNo functional difference; alternate ordering code for same production lotSelect when cross-referencing Diodes' internal part numbering variants
SI2302DS-T1-GE3Higher RDS(ON) (48mΩ @ 4.5V), lower ID (3.2A), SOT-23 packageLimited to sub-2A loads; unsuitable for 5–7A backlight or PoL applicationsOnly for space-constrained, low-current designs where SO-8 thermal mass is unnecessary

Compared with DMN3025LSS-13, DMN3025LSD-13 offers identical performance and fit, while SI2302DS-T1-GE3 trades thermal capability and current capacity for footprint reduction-making it viable only in low-power, non-automotive contexts.

Availability

DMN3025LSS-13 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC converters, and automotive body control modules requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for DMN3025LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMN3025LSS-13 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12V/24V automotive subsystems and industrial power conversion where thermal robustness and avalanche tolerance are mandatory.

FAQ

What is the maximum safe operating junction temperature for DMN3025LSS-13?

The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating is required above +125°C ambient; actual TJ must be calculated using RθJA = 73°C/W and measured power dissipation.

Can DMN3025LSS-13 be used in a high-side switch configuration?

Yes-it supports high-side operation when paired with a floating gate driver (e.g., bootstrap or isolated gate driver). Its ±20V VGS rating and 30V VDSS allow use in 24V systems; however, gate drive must exceed source voltage by ≥4.5V to ensure full enhancement and low RDS(ON).

Does DMN3025LSS-13 have integrated ESD protection?

No integrated ESD protection structure is specified in the datasheet. The device meets HBM ESD rating of ±2kV (per JEDEC JESD22-A114), but external TVS or RC filtering is recommended on gate and drain lines in noisy automotive or industrial environments.

Is the SO-8 package thermally enhanced?

The standard SO-8 package uses a copper leadframe with exposed drain pads (pins 5–8) that serve as thermal conduction paths. While not a thermally enhanced variant like PowerSO-8, the layout supports 1.7W power dissipation with 1-inch² copper, verified per Note 6 in the datasheet.

DMN3025LSS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
641 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.4W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMN3025LSS-13 FAQ

1.How can I place an order for DMN3025LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3025LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3025LSS-13 reliable?

The price and inventory of DMN3025LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3025LSS-13 is usually 5 days.

3.What payment methods are accepted for DMN3025LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3025LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3025LSS-13?

DMN3025LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3025LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3025LSS-13?

For technical support, including DMN3025LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3025LSS-13 requirements.

6.How does Aetrix verify that DMN3025LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMN3025LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3025LSS-13 meets industry standards.

7.What is the process for return or replacement of DMN3025LSS-13?

All DMN3025LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3025LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3025LSS-13 part is unused and in its original packaging.

Return procedure for DMN3025LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3025LSS-13 Tags

  • DMN3025LSS-13
  • DMN3025LSS-13 PDF
  • DMN3025LSS-13 Datasheet
  • DMN3025LSS-13 Specifications
  • DMN3025LSS-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN3025LSS-13
  • Buy DMN3025LSS-13
  • DMN3025LSS-13 Price
  • DMN3025LSS-13 Distributor
  • DMN3025LSS-13 Supplier
  • DMN3025LSS-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER