Diodes Incorporated DMN3025LSS-13
- Part No.:
- DMN3025LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN3025LSS-13.pdf
- Description:
- MOSFET N CH 30V 7.2A 8-SO
- Quantity:
- Payment:

- Shipping:

Inventory:2,486
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Product details
Overview
DMN3025LSS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 30V V(BR)DSS, 20mΩ RDS(ON) @ 10V VGS, and 7.2A continuous drain current at +25°C. It delivers low conduction loss and fast switching in DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMN3025LSS-13 datasheet, DMN3025LSS-13 pinout, DMN3025LSS-13 application, or DMN3025LSS-13 equivalent, key selection criteria include on-resistance vs. gate voltage, thermal resistance (RθJA = 73°C/W), avalanche energy rating (EAS = 10.5mJ), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining robust switching performance. Its 4.5V-rated on-resistance (31mΩ) supports 3.3V/5V logic-level drive in synchronous buck stages, and its low Ciss (641pF) and Qg (13.2nC @ 10V) enable efficient high-frequency operation up to 1MHz.
The device integrates a body diode with VF = 0.7–1.0V at 1A and supports repetitive avalanche operation (IAS = 14.5A, EAS = 10.5mJ). Thermal design is enabled by SO-8 package characteristics: RθJA = 73°C/W (with 1-inch² copper), and operation across –55°C to +150°C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30V - maximum blocking voltage before avalanche; suitable for 24V rail and 12V input DC-DC stages |
| RDS(ON) | 20mΩ @ VGS = 10V - enables <145mW conduction loss at 7.2A; critical for thermal budget in compact power stages |
| ID (continuous) | 7.2A @ TA = +25°C - defines max steady-state load current without heatsink under standard FR-4 layout |
| Qg | 13.2nC @ VGS = 10V - determines gate driver power requirement and switching transition time in hard-switched topologies |
| EAS | 10.5mJ - quantifies single-pulse avalanche energy handling; supports inductive load turn-off safety margin |
| RθJA | 73°C/W - thermal resistance with 1-inch² copper; used to calculate junction temperature rise under real PCB layout conditions |
| AEC-Q101 | Qualified - confirms reliability for automotive power modules, including temperature cycling and HTRB stress testing |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), molded green plastic, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel FET dies; low-inductance return path for high di/dt currents |
| 5, 6, 7, 8 | Drain (D) | Power output node tied to internal drain metallization; connects to heat-spreading copper pour on PCB |
| Gate (pin 1 of internal schematic, labeled "G" in top view) | Control input | Single gate terminal accepting 0–20V drive; requires external series resistor (RG ≈ 6Ω typical) to damp ringing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 4.5V | 31mΩ - enables direct drive from 3.3V microcontrollers in battery-powered DC-DC regulators |
| Low Ciss | 641pF - reduces gate charge demand and improves efficiency in high-frequency (>500kHz) PWM applications |
| Fast switching | tD(on) = 3.3ns, tf = 5.3ns - minimizes overlap loss in synchronous rectification and half-bridge configurations |
| AEC-Q101 qualified | Validated for automotive ambient temperatures (–40°C to +125°C case) and lifetime reliability per JEDEC standards |
| Green packaging | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); compliant with EU RoHS 2 and JESD201A Class 2 |
Applications
| LED Backlighting | Point-of-Load DC-DC Converter |
|---|---|
Use Scenario: Driving white LED strings in automotive instrument clusters and infotainment displays using constant-current boost topology. IC Role / Device Role: High-side switch controlling LED current path; operates in PWM dimming mode at 1–20kHz. Use Value: Low RDS(ON) minimizes power loss in high-current (5–7A) backlight drivers; fast turn-off prevents LED ghosting during rapid dimming transitions. | Use Scenario: Synchronous rectifier in 12V-to-3.3V/5V buck converter for industrial PLC I/O modules. IC Role / Device Role: Low-side power switch in synchronous buck stage; driven by dedicated gate controller (e.g., MP6540). Use Value: 31mΩ RDS(ON) @ 4.5V ensures >92% efficiency at 5A load; SO-8 thermal pad allows direct PCB copper cooling without heatsink. |
| Automotive Body Control Module | USB-C Power Delivery Load Switch |
Use Scenario: Power distribution switch for solenoid valves and relays in BCMs, requiring fault-tolerant overcurrent protection. IC Role / Device Role: Protected high-side load switch; used with external current-sense amplifier and MCU-based protection logic. Use Value: AEC-Q101 qualification ensures operation at 125°C ambient; 14.5A avalanche current withstands inductive kickback from 24V solenoids. | Use Scenario: Inrush current limiting and hot-swap control for USB-C PD sink ports in portable medical devices. IC Role / Device Role: Low-RDS(ON) pass element in discrete load switch circuit with RC gate timing and OVP clamping. Use Value: 20mΩ on-resistance limits voltage drop to <100mV at 5A; SO-8 footprint enables compact 2-layer PCB layout with minimal trace inductance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Same die, different marking; identical electrical specs and SO-8 package | No functional difference; alternate ordering code for same production lot | Select when cross-referencing Diodes' internal part numbering variants |
| SI2302DS-T1-GE3 | Higher RDS(ON) (48mΩ @ 4.5V), lower ID (3.2A), SOT-23 package | Limited to sub-2A loads; unsuitable for 5–7A backlight or PoL applications | Only for space-constrained, low-current designs where SO-8 thermal mass is unnecessary |
Compared with DMN3025LSS-13, DMN3025LSD-13 offers identical performance and fit, while SI2302DS-T1-GE3 trades thermal capability and current capacity for footprint reduction-making it viable only in low-power, non-automotive contexts.
Availability
DMN3025LSS-13 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC converters, and automotive body control modules requiring stable component supply and AEC-Q101-compliant sourcing.
Supply support for DMN3025LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMN3025LSS-13 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12V/24V automotive subsystems and industrial power conversion where thermal robustness and avalanche tolerance are mandatory.
FAQ
What is the maximum safe operating junction temperature for DMN3025LSS-13?
The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating is required above +125°C ambient; actual TJ must be calculated using RθJA = 73°C/W and measured power dissipation.
Can DMN3025LSS-13 be used in a high-side switch configuration?
Yes-it supports high-side operation when paired with a floating gate driver (e.g., bootstrap or isolated gate driver). Its ±20V VGS rating and 30V VDSS allow use in 24V systems; however, gate drive must exceed source voltage by ≥4.5V to ensure full enhancement and low RDS(ON).
Does DMN3025LSS-13 have integrated ESD protection?
No integrated ESD protection structure is specified in the datasheet. The device meets HBM ESD rating of ±2kV (per JEDEC JESD22-A114), but external TVS or RC filtering is recommended on gate and drain lines in noisy automotive or industrial environments.
Is the SO-8 package thermally enhanced?
The standard SO-8 package uses a copper leadframe with exposed drain pads (pins 5–8) that serve as thermal conduction paths. While not a thermally enhanced variant like PowerSO-8, the layout supports 1.7W power dissipation with 1-inch² copper, verified per Note 6 in the datasheet.
DMN3025LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 641 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN3025LSS-13 FAQ
1.How can I place an order for DMN3025LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3025LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3025LSS-13 reliable?
The price and inventory of DMN3025LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3025LSS-13 is usually 5 days.
3.What payment methods are accepted for DMN3025LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3025LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3025LSS-13?
DMN3025LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3025LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3025LSS-13?
For technical support, including DMN3025LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3025LSS-13 requirements.
6.How does Aetrix verify that DMN3025LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMN3025LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3025LSS-13 meets industry standards.
7.What is the process for return or replacement of DMN3025LSS-13?
All DMN3025LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3025LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3025LSS-13 part is unused and in its original packaging.
Return procedure for DMN3025LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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