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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3026LVTQ-13

Name: DMN3026LVTQ-13
Brand: Diodes Incorporated
SKU: DMN3026LVTQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3026LVTQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN3026LVTQ-13.pdf

Description:: MOSFET N-CH 30V 6.6A TSOT26

Quantity:: RFQ Add To RFQ list

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Inventory:6,053

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Product details

Overview

DMN3026LVTQ-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in TSOT26 package, featuring 23 mΩ R_DS(ON) at V_GS = 10 V, 6.6 A continuous drain current at T_A = +25°C, and AEC-Q101 qualification for automotive reliability. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters.

For engineers reviewing the DMN3026LVTQ-13 datasheet, DMN3026LVTQ-13 pinout, DMN3026LVTQ-13 application, or DMN3026LVTQ-13 equivalent, key selection criteria include low R_DS(ON) at 4.5 V drive, fast switching (t_D(off) = 12.1 ns), body diode recovery (t_rr = 6.5 ns), and TSOT26 thermal performance (R_θJA = 83 °C/W).

Technical Context

This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining controlled gate charge (Q_g = 12.5 nC at V_GS = 10 V) and low output capacitance (C_oss = 65 pF). Its threshold voltage range (1.0–2.0 V) ensures stable turn-on with standard logic-level drivers.

The device integrates a co-packaged body diode with V_SD = 0.7–1.2 V at I_S = 1.0 A and t_rr = 6.5 ns under 100 A/µs dI/dt, enabling efficient freewheeling in buck and boost topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports input rails up to 24 V nominal systems with 20 % margin.
R_DS(ON)	23 mΩ @ V_GS = 10 V - Delivers ≤1.0 W conduction loss at 6.6 A DC load.
I_D (continuous)	6.6 A @ T_A = +25°C - Sustains typical mid-power DC-DC output stage currents.
C_iss	643 pF - Enables clean gate drive with <10 Ω source impedance and minimal ringing.
t_D(off)	12.1 ns - Limits dead-time losses in synchronous buck converters operating >500 kHz.
Q_gd	1.8 nC - Reduces Miller-induced shoot-through risk during hard switching.
T_J range	−55 to +150 °C - Validated for under-hood automotive and industrial ambient conditions.

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 2.8 × 0.8 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (D)	Drain	Main high-side or low-side power path terminal; connected to internal die substrate.
2 (D)	Drain	Second drain connection for enhanced thermal and current sharing in compact layout.
3 (G)	Gate	Control input; requires 1.0–2.0 V threshold and 12.5 nC total charge for full enhancement.
4 (S)	Source	Reference node for gate drive and current sensing; tied to PCB ground plane for thermal dissipation.
5 (D)	Drain	Third drain connection; electrically identical to Pins 1 and 2, improves solder joint reliability.
6 (D)	Drain	Fourth drain connection; provides lowest possible R_DS(ON) and thermal resistance via multi-terminal routing.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V	30 mΩ - Enables direct interface with 3.3 V or 5 V microcontroller GPIO without level-shifting.
AEC-Q101 qualified	Validated for automotive-grade temperature cycling, HTRB, and ESD per JESD22-A114 - supports infotainment and ADAS subsystems.
Fast body diode recovery	t_rr = 6.5 ns - Minimizes reverse recovery loss and EMI in discontinuous conduction mode (DCM) operation.
Green compound packaging	UL 94V-0 rated, <900 ppm Br/Cl, <1000 ppm Sb - Meets automotive OEM environmental compliance requirements.

Applications

Automotive Infotainment Power Rails

Industrial DC-DC POL Converters

Use Scenario: 12 V to 5 V/3.3 V conversion for head unit SoCs and display controllers in vehicles.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck converter; switches at 300–600 kHz with precise dead-time control.

Use Value: 23 mΩ R_DS(ON) reduces conduction loss by ≥35 % vs. legacy 40 mΩ MOSFETs, improving thermal margin in sealed enclosures.

Use Scenario: Point-of-load regulation for PLC I/O modules requiring stable 3.3 V at up to 5 A.

IC Role / Device Role / Timing Role: High-efficiency power switch in compact 12 mm × 12 mm DC-DC module with forced-air cooling.

Use Value: TSOT26 footprint enables high-density layout while R_θJA = 83 °C/W allows 1.0 W dissipation without heatsink.

LCD Backlight LED Drivers

USB-C PD Power Path Switching

Use Scenario: Constant-current switching for 24–48 V LED strings in commercial signage and kiosks.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch modulating LED current at 1–5 kHz.

Use Value: Fast t_r/t_f (2.5 ns / 3.0 ns) ensures sharp edge fidelity and minimal duty-cycle distortion.

Use Scenario: Input power path selection between USB-C port and battery in portable medical devices.

IC Role / Device Role / Timing Role: Load switch controlling 5–20 V bidirectional power flow with reverse-blocking capability.

Use Value: V_GSS = ±20 V rating and 30 V V_DSS support full USB-C PD 3.0 voltage range with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LVTQ-7	R_DS(ON) = 20 mΩ @ 10 V (lower), but only rated to 5.5 A ID; same TSOT26 package and AEC-Q101 qualification.	Better efficiency at light loads; limited peak current handling in transient-heavy applications.	Select when conduction loss dominates and peak current stays below 5.5 A.
NTMFS4C06NT1G	30 V, 2.8 mΩ @ 10 V, SO-8FL package; higher current (120 A pulsed), larger footprint, no AEC-Q101.	Superior thermal performance for high-power designs; unsuitable for space-constrained automotive modules.	Choose for industrial power supplies where board area and cost outweigh automotive qualification needs.

Compared with DMN3026LVTQ-13, DMN3025LVTQ-7 trades 0.3 mΩ lower R_DS(ON) for 1.1 A reduced continuous current, while NTMFS4C06NT1G offers 8× lower on-resistance at the cost of package size and automotive compliance - making DMN3026LVTQ-13 optimal for AEC-Q101–required, space-limited 6 A applications.

Availability

DMN3026LVTQ-13 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial DC-DC point-of-load converters, and LCD backlight LED drivers requiring stable component supply across extended production lifecycles.

Supply support for DMN3026LVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN3026LVTQ belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability, thermally constrained power conversion in automotive and industrial environments.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN3026LVTQ-13 supports 5.3 A continuous drain current at T_A = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad). This derating reflects thermal resistance (R_θJA = 83 °C/W) and junction temperature limit of +150°C. Operation above this current requires enhanced copper area or forced airflow.

Does this MOSFET require a gate resistor for stability?

Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 49 pF) and PCB inductance. The low gate resistance (R_G = 2.5 Ω) and 12.5 nC Q_g make it susceptible to oscillation without proper gate drive impedance matching.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode has t_rr = 6.5 ns and Q_rr = 1.7 nC under 100 A/µs dI/dt, enabling reliable synchronous rectification in buck converters up to 1 MHz. Its V_SD = 0.7–1.2 V at 1 A ensures low forward loss without external Schottky diodes.

Can DMN3026LVTQ-13 be used in linear regulator applications?

No - it is not characterized or rated for linear (saturation) operation. The Safe Operating Area (SOA) curve shows limited DC capability (≤0.1 A at 20 V), and thermal runaway risk increases rapidly outside switching-mode boundaries. Use only in switched-mode topologies with defined duty cycle and dead time.

DMN3026LVTQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 643 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN3026LVTQ-13 FAQ

1.How can I place an order for DMN3026LVTQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3026LVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3026LVTQ-13 reliable?

The price and inventory of DMN3026LVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3026LVTQ-13 is usually 5 days.

3.What payment methods are accepted for DMN3026LVTQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3026LVTQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3026LVTQ-13?

DMN3026LVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3026LVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3026LVTQ-13?

For technical support, including DMN3026LVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3026LVTQ-13 requirements.

6.How does Aetrix verify that DMN3026LVTQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN3026LVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3026LVTQ-13 meets industry standards.

7.What is the process for return or replacement of DMN3026LVTQ-13?

All DMN3026LVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3026LVTQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3026LVTQ-13 part is unused and in its original packaging.

Return procedure for DMN3026LVTQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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