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Diodes Incorporated DMN3026LVTQ-7

Part No.:
DMN3026LVTQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMN3026LVTQ-7.pdf
Description:
MOSFET N-CH 30V 6.6A TSOT26
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,995

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Product details

Overview

DMN3026LVTQ-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in TSOT26 package, featuring 23 mΩ RDS(ON) at VGS = 10 V and 30 mΩ at VGS = 4.5 V, rated for 6.6 A continuous drain current at 25°C, and qualified to AEC-Q101 for automotive power management circuits including DC-DC converters and LED backlighting.

For engineers reviewing the DMN3026LVTQ-7 datasheet, DMN3026LVTQ-7 pinout, DMN3026LVTQ-7 application, or DMN3026LVTQ-7 equivalent, key selection criteria include low RDS(ON) at 4.5 V gate drive, fast switching (tD(on) = 2.2 ns), body diode recovery performance (trr = 6.5 ns), thermal resistance (RθJA = 83 °C/W with 1-in² copper), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This MOSFET employs a trench-gate process optimized for low on-resistance while maintaining controlled gate charge (Qg = 12.5 nC at VGS = 10 V) and low output capacitance (Coss = 65 pF). Its threshold voltage range (1.0–2.0 V) ensures stable turn-on across temperature and supply variation.

The device integrates a robust body diode with VSD = 0.7–1.2 V at 1.0 A and Qrr = 1.7 nC, enabling efficient synchronous rectification and flyback operation. Thermal design is supported by RθJC = 14.5 °C/W and validated junction-to-ambient performance under defined PCB layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial DC-DC stages.
RDS(ON) 23 mΩ @ VGS = 10 V - Enables <150 mW conduction loss at 6.6 A, critical for high-efficiency buck regulators.
ID (continuous) 6.6 A @ TA = 25°C - Supports compact power stages without forced airflow in space-constrained modules.
Qg 12.5 nC @ VGS = 10 V - Balances switching speed and gate driver loading for 500 kHz–1 MHz operation.
trr 6.5 ns - Minimizes reverse recovery losses in synchronous rectifier and half-bridge configurations.
RθJA 83 °C/W - Validated with 1-inch² copper pad; enables 1.5 W dissipation at ≤70°C ambient without heatsink.
AEC-Q101 Qualified - Meets stress test requirements for automotive power semiconductors including HTGB, HTRB, and TC.

Pinout & Package

TSOT26 surface-mount package: 6-pin, lead-free, halogen-free, green molding compound (UL 94V-0), moisture sensitivity level 1, 0.013 g weight.

Pin/Terminal Circuit Role Design Meaning
1, 2, 4, 5 (D) Drain Parallel-connected drain terminals reduce package inductance and improve current sharing in high-frequency switching.
3 (G) Gate Single gate input with 2.5 Ω internal gate resistance; compatible with standard 3.3 V/5 V logic-level drivers.
6 (S) Source Source terminal referenced to PCB ground plane; used for Kelvin sensing in precision current monitoring designs.

Key Features

Feature Design Value
Low RDS(ON) at 4.5 V 30 mΩ - Enables direct drive from 5 V microcontrollers and PMICs without level-shifting.
Fast switching tD(on) = 2.2 ns, tf = 3.0 ns - Reduces transition losses in high-frequency DC-DC converters (>1 MHz).
Low Ciss/Coss Ciss = 643 pF, Coss = 65 pF - Improves efficiency in resonant topologies and reduces EMI generation.
AEC-Q101 qualification PPAP-capable - Supports automotive Tier-1 BOM inclusion with full traceability and reliability documentation.
Green construction Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - Complies with EU ELV and OEM sustainability mandates.

Applications

Automotive DC-DC Converters LED Backlight Drivers

Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in buck converter topology operating at 500 kHz–2 MHz.

Use Value: 23 mΩ RDS(ON) minimizes conduction loss at peak load (6 A), improving system efficiency by ≥1.2% over comparable 30 mΩ devices.

Use Scenario: Constant-current LED string control in instrument cluster and center display backlighting.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating LED brightness at 1–20 kHz.

Use Value: Fast 3.0 ns fall time ensures precise dimming resolution and eliminates visible flicker at low duty cycles.

Industrial Power Supplies USB-C PD Power Path

Use Scenario: Secondary-side synchronous rectification in isolated 24 V input AC-DC adapters for factory automation controllers.

IC Role / Device Role / Timing Role: Low-side rectifier switch replacing Schottky diode in LLC or flyback secondary.

Use Value: Body diode VSD = 0.7 V and Qrr = 1.7 nC reduce reverse recovery loss, increasing full-load efficiency by 0.8–1.1%.

Use Scenario: Input power path protection and dynamic load switching in USB-C PD 3.0 compliant portable chargers.

IC Role / Device Role / Timing Role: Load switch controlling 5–20 V input rail to downstream buck converters and battery charging ICs.

Use Value: 4.5 V RDS(ON) = 30 mΩ ensures <100 mV drop at 3.3 A, meeting USB-C voltage regulation tolerance (±5%) at full power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3025LVTQ-7 RDS(ON) = 20 mΩ @ 10 V (lower), but ID = 7.0 A - higher conduction capability at cost of slightly higher Qg (13.8 nC). Better suited for high-current, lower-frequency (<300 kHz) power stages where gate drive strength exceeds 1 A. Select when prioritizing lowest possible conduction loss over ultra-fast switching; verify gate driver slew rate compatibility.
SI2302DS-T1-GE3 RDS(ON) = 48 mΩ @ 4.5 V (higher), Qg = 4.5 nC (lower), no AEC-Q101 qualification. Acceptable for consumer-grade 5 V logic-switched loads but unsuitable for automotive or high-reliability industrial use. Choose only for cost-sensitive non-automotive applications where 4.5 V drive margin is sufficient and qualification is not required.

Compared with DMN3026LVTQ-7, DMN3025LVTQ-7 delivers lower RDS(ON) at identical VGS, improving efficiency in thermally constrained designs, while SI2302DS-T1-GE3 trades off conduction loss and qualification for reduced gate charge and cost-making it viable only outside automotive and safety-critical systems.

Availability

DMN3026LVTQ-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and industrial power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for DMN3026LVTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing and test facilities across Asia and North America.

This MOSFET belongs to Diodes' Automotive-Grade Power portfolio, engineered specifically for high-reliability 12 V/24 V vehicle subsystems including body electronics, lighting, and infotainment power rails.

FAQ

What is the maximum continuous drain current for DMN3026LVTQ-7 at 70°C ambient?

The maximum continuous drain current is 5.3 A at TA = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad). This rating accounts for thermal derating due to increased RθJA at elevated ambient temperatures and ensures safe operation within the SOA limits shown in Figure 12 of the datasheet.

Is DMN3026LVTQ-7 suitable for 3.3 V logic-level gate drive?

No - the device has a gate threshold voltage range of 1.0–2.0 V, but its RDS(ON) is specified only down to VGS = 4.5 V (30 mΩ). At 3.3 V, RDS(ON) rises significantly (≥65 mΩ), increasing conduction loss beyond acceptable levels for most power applications.

Does DMN3026LVTQ-7 include an integrated ESD protection diode?

No - the device does not integrate dedicated ESD protection circuitry. It relies on standard MOSFET gate oxide robustness (±20 V VGSS) and requires external TVS or RC snubbers in high-noise environments such as automotive CAN/LIN bus proximity or motor drive feedback paths.

What is the recommended PCB pad layout for optimal thermal performance?

Use the 1-inch square copper plate layout per Note 7 in the datasheet (RθJA = 83 °C/W). The suggested pad dimensions are provided in AP02001; thermal vias under the drain pads (minimum 6×0.3 mm diameter) connected to inner-layer ground planes further reduce junction temperature by up to 15°C at full load.

DMN3026LVTQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
643 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMN3026LVTQ-7 FAQ

1.How can I place an order for DMN3026LVTQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3026LVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3026LVTQ-7 reliable?

The price and inventory of DMN3026LVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3026LVTQ-7 is usually 5 days.

3.What payment methods are accepted for DMN3026LVTQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3026LVTQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3026LVTQ-7?

DMN3026LVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3026LVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3026LVTQ-7?

For technical support, including DMN3026LVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3026LVTQ-7 requirements.

6.How does Aetrix verify that DMN3026LVTQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN3026LVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3026LVTQ-7 meets industry standards.

7.What is the process for return or replacement of DMN3026LVTQ-7?

All DMN3026LVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3026LVTQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3026LVTQ-7 part is unused and in its original packaging.

Return procedure for DMN3026LVTQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3026LVTQ-7 Tags

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  • Diodes Incorporated
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