Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN3027LFG-13

Part No.:
DMN3027LFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMN3027LFG-13.pdf
Description:
MOSFET N-CH 30V 5.3A PWRDI3333-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,297

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN3027LFG-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in POWERDI®3333-8 package, rated for 30V VDSS, 18.6mΩ RDS(ON) @ VGS = 10V, and 8.0A continuous drain current at TA = +25°C. It serves as a high-efficiency power switch in DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMN3027LFG-13 datasheet, DMN3027LFG-13 pinout, DMN3027LFG-13 application, or DMN3027LFG-13 equivalent, key selection criteria include RDS(ON) at 4.5V/10V, thermal resistance (RθJA = 62.5°C/W on 2"×2" FR-4), avalanche rating (IAR = 18A), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction loss and fast switching. Its gate threshold voltage (VGS(TH) = 0.9–1.8V) enables robust turn-on with standard logic-level drivers, while its 70A pulsed drain current supports transient load handling in power management stages.

The device features fully characterized dynamic parameters: Qg = 11.3nC @ VGS = 10V, Ciss = 580pF, and tF = 5.8ns - enabling efficient operation in synchronous buck topologies up to several hundred kHz without excessive gate drive loss.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - supports 24V rail systems with margin against transients
RDS(ON) @ VGS = 10V 18.6mΩ max - limits conduction loss to ≤1.2W at 8A DC
RDS(ON) @ VGS = 4.5V 26.5mΩ max - ensures usable on-resistance with 3.3V/5V logic-level gate drive
ID Continuous @ TA = +25°C 8.0A - delivers >19W output in compact DC-DC converter designs
RθJA 62.5°C/W - enables 2.07W power dissipation on 2"×2" 2oz copper PCB
Avalanche Energy EAR 16mJ - withstands single-pulse inductive kickback without failure
Qg @ VGS = 10V 11.3nC - determines gate driver current requirement (~1.1mA avg @ 100kHz)

Pinout & Package

Packaged in POWERDI®3333-8 - a thermally enhanced, surface-mount 8-pin leadless package with exposed drain pad for improved heat transfer. Dimensions: 3.30mm × 3.30mm × 0.80mm (L×W×H), footprint occupies only 33% of SO-8 area.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source (S) Common source connection; tied internally to thermal pad for low-inductance return path
5, 6, 7, 8 Drain (D) Main power output node; connected to exposed copper pad for thermal and electrical conduction
Gate (G) Control input Single terminal located between pins 4 and 5 - requires <3Ω series resistance to damp ringing

Key Features

Feature Design Value
100% UIS (Avalanche) Rated Guarantees ruggedness against inductive switching stress without external snubbers
100% Rg Tested Ensures consistent gate drive timing and minimizes variation in tD(ON)/tF
AEC-Q101 Qualified Validated for automotive power modules, infotainment supplies, and body control units
Green, Halogen-Free Construction Meets JESD22-A112 for MSL Level 1 - no baking required before reflow
Thermal Resistance Reduction RθJA = 62.5°C/W (vs. ~150°C/W for SO-8) enables higher power density in space-constrained layouts

Applications

LED Backlighting DC-DC Buck Converter

Use Scenario: Driving parallel strings of white LEDs in automotive instrument clusters and LCD displays.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–500kHz PWM frequency.

Use Value: 26.5mΩ RDS(ON) @ 4.5V ensures <0.5W conduction loss per channel at 6.5A, reducing thermal load on display PCB.

Use Scenario: High-efficiency 12V-to-3.3V/5V point-of-load conversion in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Main power FET in non-isolated buck regulator with integrated controller.

Use Value: 11.3nC Qg and 5.8ns tF enable >92% efficiency at 300kHz switching, minimizing gate drive losses and EMI.

Automotive Power Management USB-C PD Power Path

Use Scenario: Load switching for 12V accessory rails in ADAS camera modules and radar sensors.

IC Role / Device Role / Timing Role: Hot-swap protection switch with controlled turn-on via gate resistor network.

Use Value: 18A avalanche current rating handles load dump transients up to ISO 7637-2 Pulse 5a without derating.

Use Scenario: Input power path switch in USB-C power delivery sink applications requiring reverse-current blocking.

IC Role / Device Role / Timing Role: Reverse-blocking N-channel FET placed between VBUS and system input, driven by dedicated PD controller.

Use Value: 30V VDSS and 0.7V diode forward voltage (VSD) support bidirectional fault detection and low-loss reverse conduction during dead-time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3028LFG-13 RDS(ON) = 22.5mΩ @ 4.5V (higher), same 30V rating and POWERDI®3333-8 package Slightly lower efficiency in 3.3V-gate-drive designs; identical thermal profile and footprint Select when cost sensitivity outweighs marginal RDS(ON) penalty and layout reuse is critical
DMT3006LPS-13 60V VDSS, 6.5mΩ @ 10V, PowerDI™5060 package (larger, 5.0×6.0mm) Supports 48V systems but requires PCB redesign; higher peak current (12A) and lower RDS(ON) Choose for future-proofing to higher bus voltages or where 6.5mΩ conduction loss justifies larger footprint

Compared with DMN3027LFG-13, DMN3028LFG-13 trades 15% higher RDS(ON) for lower unit cost in identical footprint, while DMT3006LPS-13 offers double the voltage rating and half the on-resistance at the expense of board area and thermal mass - making DMN3027LFG-13 optimal for space-constrained 24V/3.3V-driven power stages.

Availability

DMN3027LFG-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC buck converters, and automotive power management applications requiring stable component supply, AEC-Q101 compliance, and high-density thermal performance.

Supply support for DMN3027LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.

This part belongs to Diodes' POWERDI® portfolio of thermally optimized MOSFETs, engineered specifically for high-power-density DC-DC conversion, LED lighting, and automotive subsystems where board space and thermal headroom are constrained.

FAQ

What is the maximum junction temperature for DMN3027LFG-13?

The absolute maximum junction temperature is +150°C, validated across the full operating range (–55°C to +150°C). Derating begins above +125°C ambient when mounted on a 2"×2" 2oz copper PCB, where power dissipation drops linearly from 2.07W at +25°C to zero at +150°C ambient.

Is DMN3027LFG-13 suitable for 3.3V gate drive applications?

Yes - its gate threshold voltage (VGS(TH) = 0.9–1.8V) and guaranteed RDS(ON) = 26.5mΩ @ VGS = 4.5V ensure reliable enhancement-mode turn-on with 3.3V logic drivers. For full saturation, a 4.5V or higher gate drive is recommended to minimize conduction loss.

Does DMN3027LFG-13 require special PCB layout considerations?

Yes - the exposed drain pad must be connected to a minimum 100mm² copper pour with ≥4 thermal vias (0.3mm diameter) to achieve the specified RθJA = 62.5°C/W. The gate trace should be short and shielded from noisy power paths to prevent false triggering due to dV/dt coupling.

How does the POWERDI®3333-8 package compare to SO-8 thermally?

POWERDI®3333-8 achieves RθJA = 62.5°C/W on a 2"×2" 2oz FR-4 board, versus ~150°C/W for standard SO-8 - a 58% reduction. This is enabled by direct die-to-pad thermal conduction and elimination of plastic body thermal resistance, allowing 2.07W continuous dissipation versus ~0.8W in SO-8 under identical conditions.

DMN3027LFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.3 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
580 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMN3027LFG-13 FAQ

1.How can I place an order for DMN3027LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3027LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3027LFG-13 reliable?

The price and inventory of DMN3027LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3027LFG-13 is usually 5 days.

3.What payment methods are accepted for DMN3027LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3027LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3027LFG-13?

DMN3027LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3027LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3027LFG-13?

For technical support, including DMN3027LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3027LFG-13 requirements.

6.How does Aetrix verify that DMN3027LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMN3027LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3027LFG-13 meets industry standards.

7.What is the process for return or replacement of DMN3027LFG-13?

All DMN3027LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3027LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3027LFG-13 part is unused and in its original packaging.

Return procedure for DMN3027LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3027LFG-13 Tags

  • DMN3027LFG-13
  • DMN3027LFG-13 PDF
  • DMN3027LFG-13 Datasheet
  • DMN3027LFG-13 Specifications
  • DMN3027LFG-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN3027LFG-13
  • Buy DMN3027LFG-13
  • DMN3027LFG-13 Price
  • DMN3027LFG-13 Distributor
  • DMN3027LFG-13 Supplier
  • DMN3027LFG-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER