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Diodes Incorporated DMN3029LFG-13

Part No.:
DMN3029LFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMN3029LFG-13.pdf
Description:
MOSFET N-CH 30V 5.3A PWRDI333-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,822

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Product details

Overview

DMN3029LFG-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in POWERDI3333-8 package, rated for 30V VDS, 18.6mΩ RDS(on) @ 10V VGS, and 8.0A continuous drain current at 25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMN3029LFG-13 datasheet, DMN3029LFG-13 pinout, DMN3029LFG-13 application, or DMN3029LFG-13 equivalent, this device supports compact power management designs requiring AEC-Q101 qualification, 100% UIS rating, and thermally efficient 33% board-area reduction versus SO-8.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low RDS(on) while maintaining controlled gate charge (Qg = 11.3nC @ 10V) and fast switching (tD(off) = 19.5ns). Its 100% Rg tested gate resistance ensures consistent turn-on/turn-off timing across production lots.

The device operates across –55°C to +150°C junction temperature range and is qualified to AEC-Q101 standards. Thermal resistance of 62.5°C/W (with 2" × 2" 2 oz Cu PCB) enables stable performance in space-constrained automotive and industrial power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30V - supports 24V rail systems with 20% margin against transients
RDS(on)18.6mΩ @ 10V - limits I²R conduction loss to ≤1.5W at 8A
ID (continuous)8.0A @ 25°C - sustains full-load operation in 12V/5A buck converters
Qg11.3nC @ 10V - enables <100ns total switching time with 10Ω gate driver
TJ range–55°C to +150°C - meets under-hood automotive ambient requirements
UIS rating100% avalanche tested - withstands inductive energy up to 16mJ without failure
RθJA62.5°C/W - requires minimal copper area for thermal compliance in dense layouts

Pinout & Package

Package: POWERDI3333-8 - surface-mount, thermally enhanced plastic package with exposed drain pad; 3.3mm × 3.3mm footprint; 0.8mm height; matte tin finish on copper leadframe.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4SourceCommon source connection; internally paralleled for low-inductance return path
5, 6, 7, 8DrainPower output node; connected to exposed thermal pad for heat dissipation
GateControl inputSingle-pin gate (Pin 1 labeled with green dot); accepts 0–10V logic-level drive

Key Features

FeatureDesign Value
Low RDS(on)18.6mΩ @ 10V reduces conduction loss by 35% vs. comparable SO-8 MOSFETs
Thermal efficiency62.5°C/W RθJA enables 2.07W power dissipation on standard 2 oz Cu PCB
AEC-Q101 qualificationValidated for automotive-grade reliability including HTOL, TC, and HAST
Board area reduction3.3mm × 3.3mm footprint occupies only 33% of SO-8 area, enabling denser PCB layouts
100% Rg testGuarantees gate resistance between 2.0–3.0Ω for predictable drive timing and EMI control

Applications

Automotive LED Headlight DriversIndustrial DC-DC Buck Converters

Use Scenario: High-side switch controlling 12V LED arrays in adaptive front lighting systems.

IC Role / Device Role / Timing Role: Power switch regulating current through constant-current LED strings during PWM dimming.

Use Value: 18.6mΩ RDS(on) minimizes thermal rise in confined headlamp housings; AEC-Q101 rating ensures 15-year field reliability.

Use Scenario: Synchronous rectifier in 24V-to-5V isolated buck converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 500kHz with 4.5V gate drive from controller.

Use Value: 26.5mΩ @ 4.5V enables >94% efficiency at 6.5A load; 100% UIS rating absorbs leakage inductance spikes.

Portable Device BacklightingUSB-C PD Power Path Switching

Use Scenario: Boost converter switch driving white LED strings in tablet displays.

IC Role / Device Role / Timing Role: Main switching transistor in 300kHz boost topology with 10V gate drive.

Use Value: Fast tD(off) = 19.5ns and low Qgd = 1.9nC reduce switching losses and improve light-output stability.

Use Scenario: Load switch managing 20V/3A power delivery path in USB-C docking station.

IC Role / Device Role / Timing Role: Reverse-blocking, logic-level-controlled power path MOSFET with overcurrent protection.

Use Value: 30V VDS and 8A rating support USB PD 3.0 PPS profiles; RoHS/Green compliance meets end-equipment environmental mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3029LSD-13Same die, SO-8 package; RθJA = 62°C/W (JEDEC 2-layer board), larger 5mm × 6mm footprintPreferred where legacy SO-8 layout reuse or higher single-pulse energy handling (20mJ) is requiredSelect when board rework is impractical but thermal margin allows SO-8's lower power density
DMN3029LH-7Same die, POWERDI3333-8 package; identical specs but 2000/reel tape-and-reel packagingNo functional difference; used for smaller-volume prototyping or dual-sourcingSelect for evaluation kits or low-MOQ procurement where 3000/reel volume is excessive

Compared with DMN3029LSD-13 and DMN3029LH-7, the DMN3029LFG-13 provides identical electrical performance in a 33% smaller footprint with equal thermal resistance-making it optimal for new designs prioritizing miniaturization without sacrificing ruggedness or qualification.

Availability

DMN3029LFG-13 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and portable display backlighting requiring stable component supply and long-term lifecycle support.

Supply support for DMN3029LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' POWERDI® portfolio of thermally optimized MOSFETs, engineered specifically for high-density power conversion in automotive, industrial, and consumer applications where board space and thermal performance are critical constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN3029LFG-13 supports 6.3A continuous drain current at TA = +70°C when mounted on a 2" × 2" FR-4 PCB with 2 oz copper (Note 6). This derating reflects thermal resistance of 62.5°C/W and junction-to-ambient temperature rise limit of 80°C above ambient.

Is the POWERDI3333-8 package lead-free and RoHS compliant?

Yes. The DMN3029LFG-13 features matte tin annealed over copper leadframe, fully compliant with EU RoHS Directive 2011/65/EU and halogen/antimony-free "Green" specifications (<900ppm Br, <900ppm Cl, <1000ppm Sb).

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and control dV/dt. With Qg = 11.3nC and typical gate driver output impedance, a 5–10Ω series resistor ensures stable 100ns-scale switching transitions and minimizes EMI in high-frequency DC-DC applications.

Can DMN3029LFG-13 be used in linear mode (constant-current regulation)?

No. This MOSFET is optimized for switching operation only. Its Safe Operating Area (SOA) limits linear-mode use to short pulses (<100µs) at low VDS; sustained linear operation risks thermal runaway due to positive RDS(on) temperature coefficient and limited SOA at high VDS/ID.

DMN3029LFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.3 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
580 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMN3029LFG-13 FAQ

1.How can I place an order for DMN3029LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3029LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3029LFG-13 reliable?

The price and inventory of DMN3029LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3029LFG-13 is usually 5 days.

3.What payment methods are accepted for DMN3029LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3029LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3029LFG-13?

DMN3029LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3029LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3029LFG-13?

For technical support, including DMN3029LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3029LFG-13 requirements.

6.How does Aetrix verify that DMN3029LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMN3029LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3029LFG-13 meets industry standards.

7.What is the process for return or replacement of DMN3029LFG-13?

All DMN3029LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3029LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3029LFG-13 part is unused and in its original packaging.

Return procedure for DMN3029LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3029LFG-13 Tags

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