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Diodes Incorporated DMN3030LFG-13
- Part No.:
- DMN3030LFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN3030LFG-13.pdf
- Description:
- DMN3030LFG-13
- Quantity:
- Payment:
- Shipping:
Inventory:6,198
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Product details
Overview
DMN3030LFG-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 30V VDSS, 18mΩ RDS(ON) @ 10V VGS, and 8.6A continuous drain current at TA = +25°C. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters and LED backlight drivers.
For engineers reviewing the DMN3030LFG-13 datasheet, DMN3030LFG-13 pinout, DMN3030LFG-13 application, or DMN3030LFG-13 equivalent, key selection criteria include its low on-resistance at 4.5V gate drive (27mΩ), thermally optimized PowerDI3333-8 footprint, and JEDEC-qualified reliability for industrial power management designs.
Technical Context
This MOSFET employs planar trench-gate technology to achieve balanced conduction loss and switching speed. Its gate threshold voltage (0.8–2.1V) enables robust operation with standard 3.3V/5V logic-level drivers, while its 17.4nC total gate charge at 10V supports efficient hard-switching up to ~1MHz in buck converters.
The device integrates a body diode with 0.7–1.0V forward voltage at 1A, supporting bidirectional current paths in synchronous rectification. Thermal resistance of 56°C/W (with thermal vias) allows 2.3W steady-state dissipation on 2oz copper PCBs - critical for space-constrained LED driver modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage in high-side or low-side switch configurations without avalanche breakdown. |
| RDS(ON) @ 10V | 18mΩ - Enables ≤1.5W conduction loss at 8.6A, suitable for 12V input buck stages delivering >5A output. |
| RDS(ON) @ 4.5V | 27mΩ - Ensures full enhancement with 3.3V microcontroller GPIOs, eliminating need for gate boosters. |
| Qg @ 10V | 17.4nC - Limits gate drive power to <1.7mW at 1MHz switching, reducing driver IC stress in portable power supplies. |
| RθJA (2oz Cu + vias) | 56°C/W - Allows 85°C junction rise at 1.4W dissipation, enabling operation at 70°C ambient without heatsink. |
| Ciss | 751pF - Predictable Miller plateau timing supports stable PWM control with <10ns propagation delay in feedback loops. |
| VGS(TH) | 0.8–2.1V - Wide threshold range ensures turn-on margin across temperature and process variation in automotive-grade designs. |
Pinout & Package
Package: PowerDI3333-8 - 3.3mm × 3.3mm surface-mount package with exposed drain paddle for enhanced thermal transfer; 0.65mm pitch, 0.4mm max height, RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals connected to internal die paddle - primary thermal path to PCB copper plane. |
| - | Gate (G) | Single gate terminal (Pin 1 marked) - requires <10Ω series resistance to damp ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 27mΩ enables direct interface with 3.3V MCUs without level-shifting, reducing BOM count in IoT node power rails. |
| PowerDI3333-8 footprint | 33% board area vs SO-8 - allows dual-phase 5V/3A buck converters in <100mm² PCB real estate. |
| JEDEC-qualified reliability | Qualified per AEC-Q101 stress tests - supports extended-life industrial equipment operating at 85°C ambient. |
| Green compound & lead-free | Halogen-free (<900ppm Br+Cl), antimony-free molding compound meets IEC 61249-2-21 for eco-sensitive consumer electronics. |
Applications
| LED Backlight Driver | USB-C PD Sink Switch |
|---|---|
Use Scenario: Driving 24-channel white LED strings in thin-bezel LCD panels with PWM dimming up to 20kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlling current through LED cathodes during PWM off-time. Use Value: 27mΩ RDS(ON) at 4.5V gate drive minimizes dropout voltage, preserving >92% efficiency at 500mA per channel. | Use Scenario: Input power path switch in portable battery-powered devices accepting 5–20V USB-C PD input. IC Role / Device Role / Timing Role: Reverse-voltage protected high-side load switch enabling/disabling VBUS to system rail. Use Value: 30V VDSS withstands 20V PD transients; body diode reverse recovery time <50ns prevents shoot-through during hot-plug events. |
| Industrial 12V-to-5V Buck Converter | Automotive Cabin Lighting Module |
Use Scenario: Secondary-side switch in 12V input, 5V/6A buck converter powering FPGA I/O banks in factory automation controllers. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and thermal load. Use Value: 18mΩ RDS(ON) cuts rectifier loss by 65% vs 40V/3A Schottky, lowering junction temperature by 22°C at full load. | Use Scenario: Dimmable 12V LED lighting control in vehicle cabin modules requiring AEC-Q101 compliance. IC Role / Device Role / Timing Role: PWM-controlled current sink for RGB LED clusters with integrated thermal foldback. Use Value: -55°C to +150°C operating range and 148°C/W RθJA (FR-4) ensure stable dimming across engine bay temperature extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFV | Lower RDS(ON) (14mΩ @ 10V) but higher Qg (22nC); same PowerDI3333-8 package. | Better conduction loss at high current, but increased gate drive loss above 500kHz. | Select when efficiency >95% at 10A is prioritized over switching frequency headroom. |
| AO3400 | SO-8 package; 26mΩ RDS(ON) @ 4.5V; 12nC Qg; lower cost but 3× larger board area. | Compatible with legacy SO-8 layouts but lacks thermal performance for >3A continuous loads. | Select only for cost-sensitive, low-density designs where thermal vias cannot be implemented. |
Compared with DMN3025LFV and AO3400, DMN3030LFG-13 delivers optimal balance of low gate charge (17.4nC), 4.5V logic compatibility, and ultra-compact thermal packaging - making it preferred for space-constrained, mid-frequency (200–800kHz) power stages.
Availability
DMN3030LFG-13 is available at Aetrix Electronics and suitable for LED backlight drivers, USB-C PD sink switches, and industrial 12V-to-5V buck converters requiring stable component supply across multi-year production cycles.
Supply support for DMN3030LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial, computing, and consumer markets.
The PowerDI3333-8 MOSFET product line targets high-density power conversion, emphasizing low RDS(ON), small footprint, and JEDEC-qualified reliability for next-generation portable and embedded systems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
At TA = +70°C with 2oz copper PCB and thermal vias (Note 6), DMN3030LFG-13 supports 6.8A continuous drain current with VGS = 10V. This rating derives from its 1.4W power dissipation limit and 56°C/W thermal resistance under those conditions.
Does this MOSFET require a gate resistor for stability?
Yes - a 5–10Ω series gate resistor is recommended to suppress high-frequency ringing caused by the 1.5Ω intrinsic gate resistance interacting with PCB trace inductance. This ensures clean 10V gate transitions and prevents false turn-on during fast dV/dt events.
Can DMN3030LFG-13 replace SO-8 MOSFETs in existing designs?
No - its PowerDI3333-8 footprint is not mechanically or electrically compatible with SO-8. The pinout differs (4-source/4-drain vs SO-8's 3-source/3-drain), and thermal pad layout requires dedicated PCB redesign to leverage its 56°C/W RθJA.
Is this part qualified for automotive use?
No - DMN3030LFG-13 is an industrial-grade part qualified to JEDEC standards. For automotive applications, Diodes offers the AEC-Q101-qualified DMN3030LFG-Q, which shares electrical specs but undergoes additional stress testing and PPAP documentation.
DMN3030LFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.4 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 751 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN3030LFG-13 FAQ
1.How can I place an order for DMN3030LFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3030LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3030LFG-13 reliable?
The price and inventory of DMN3030LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3030LFG-13 is usually 5 days.
3.What payment methods are accepted for DMN3030LFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3030LFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3030LFG-13?
DMN3030LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3030LFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3030LFG-13?
For technical support, including DMN3030LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3030LFG-13 requirements.
6.How does Aetrix verify that DMN3030LFG-13 is sourced from the original manufacturer or authorized distributors?
All DMN3030LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3030LFG-13 meets industry standards.
7.What is the process for return or replacement of DMN3030LFG-13?
All DMN3030LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3030LFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3030LFG-13 part is unused and in its original packaging.
Return procedure for DMN3030LFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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