Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN3030LSS-13

Part No.:
DMN3030LSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMN3030LSS-13.pdf
Description:
MOSFET N-CH 30V 9A 8SOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:705

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN3030LSS-13 from Diodes Incorporated is a single N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 30V V(BR)DSS, 18mΩ RDS(ON) @ 10V VGS, and 9.0A ID at TA = +25°C in an SO-8 package. It delivers low gate threshold voltage (1–2.1V), fast switching, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the DMN3030LSS-13 datasheet, DMN3030LSS-13 pinout, DMN3030LSS-13 application, or DMN3030LSS-13 equivalent, key selection criteria include on-resistance vs. gate drive voltage (18mΩ @ 10V, 30mΩ @ 4.5V), thermal resistance (50°C/W with copper pad), and SO-8 terminal layout for DC-DC converter high-side/low-side switching.

Technical Context

This MOSFET operates as a unidirectional power switch in synchronous rectification and load-switching topologies. Its low RDS(ON) and 7.6–25nC total gate charge enable efficient operation at switching frequencies up to several hundred kHz in buck converters and LED backlight drivers.

The device uses planar silicon process technology with optimized channel geometry to balance conduction loss and switching loss. Gate threshold voltage stability across temperature (±0.2V from –55°C to +150°C) supports robust turn-on control in thermally demanding environments.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS30V - Maximum drain-source blocking voltage before avalanche breakdown; defines safe operating range in 24V bus applications.
RDS(ON)18mΩ @ VGS = 10V - Conduction loss of 1.44W at 9A; enables >95% efficiency in 12V input buck stages.
ID (max)9.0A @ TA = +25°C - Continuous current capability with FR-4 PCB and 1-inch² copper; derates to 6.75A at +70°C.
Qg7.6–25nC - Gate drive energy requirement scales with VGS; impacts driver sizing and switching loss at 100–500kHz.
RθJA50°C/W - Thermal resistance with enhanced copper pad; junction-to-ambient rise is 450°C at 9A PD limit (2.5W).
VGS(th)1.0–2.1V - Ensures full enhancement with 3.3V logic-level gate drive; compatible with microcontroller GPIO without level shift.

Pinout & Package

Package: SO-8 surface-mount plastic package with matte tin–annealed copper leadframe, UL 94V-0 rated molding compound, and moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts 0–25V gate-source voltage; low input capacitance (741pF) reduces drive power.
2 (S)SourceReference node for gate drive; tied to power ground in low-side switch configuration.
3 (D)DrainHigh-current output node; internally paralleled across pins 4, 5, 7, 8 for reduced package inductance.
4 (D)DrainDrain connection; electrically common with pins 3, 5, 7, 8 per internal die bonding.
5 (D)DrainDrain connection; provides redundant current path and thermal spreading to PCB copper.
6 (G)GateSecond gate terminal; tied internally to pin 1; improves gate loop inductance in high-frequency layouts.
7 (D)DrainDrain connection; used for thermal relief and current sharing in high-power routing.
8 (D)DrainDrain connection; facilitates Kelvin sensing or separate power/thermal pad routing in multi-layer boards.

Key Features

FeatureDesign Value
Low RDS(ON) @ 4.5V30mΩ - Enables direct drive from 5V or 4.5V PWM controllers without gate boosting.
Fast switching speedtd(on)/tr = 4.0/4.4ns - Reduces transition losses in high-frequency DC-DC converters (>300kHz).
AEC-Q101 qualifiedAutomotive-grade reliability - Validated for temperature cycling, HTRB, and ESD per stress test requirements.
Green packagingHalogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - Complies with JEDEC J-STD-020 and RoHS 3.

Applications

LED Backlight DriverAutomotive Body Control Module

Use Scenario: Driving parallel LED strings in LCD displays using PWM dimming at 1–20kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling current path to LED cathodes; synchronized to MCU PWM output.

Use Value: 30mΩ RDS(ON) @ 4.5V ensures minimal voltage drop and heat generation during 7A peak LED current pulses.

Use Scenario: Controlling 12V solenoid valves and relays in door lock, window lift, and mirror adjustment circuits.

IC Role / Device Role / Timing Role: High-reliability load switch interfacing microcontroller GPIO to inductive loads with flyback protection.

Use Value: AEC-Q101 qualification and 40A pulsed drain rating support surge immunity during relay coil de-energization.

Point-of-Load DC-DC ConverterUSB-C Power Delivery Sink

Use Scenario: Synchronous rectifier in 5V/3.3V buck converters powering FPGA I/O banks or memory interfaces.

IC Role / Device Role / Timing Role: Bottom-FET in synchronous buck topology; commutated by controller's complementary gate signals.

Use Value: 7.6nC Qg at 4.5V minimizes gate drive loss and allows use of low-power integrated drivers like MP2315.

Use Scenario: Input power path switch enabling/disabling 5–20V USB-C PD input to system PMIC under firmware control.

IC Role / Device Role / Timing Role: Hot-swap MOSFET placed between USB-C receptacle and downstream power rail.

Use Value: 30V V(BR)DSS safely handles 20V PD profiles; low leakage (<1μA IDSS) prevents standby current drain.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3020LSD-13Lower RDS(ON): 12.5mΩ @ 10V; higher Qg: 14.5nC; same SO-8 package.Better conduction loss but higher switching loss; suited for <200kHz applications where efficiency dominates.Select when optimizing for continuous conduction mode (CCM) buck converters with fixed 10V gate drive.
SI2300DS-T1-GE3Higher RDS(ON): 35mΩ @ 4.5V; lower V(BR)DSS: 20V; SOT-23 package.Limited to ≤12V systems; unsuitable for 24V automotive or USB-PD; smaller footprint but lower power handling.Choose only for space-constrained, low-current (<3A), non-automotive consumer applications.

Compared with DMN3030LSS-13, DMN3020LSD-13 offers superior conduction efficiency at the cost of increased gate drive demand, while SI2300DS-T1-GE3 trades voltage rating and current capacity for compactness-neither is pin-compatible nor drop-in.

Availability

DMN3030LSS-13 is available at Aetrix Electronics and suitable for LED backlighting, automotive body control modules, and point-of-load DC-DC converters requiring stable component supply and AEC-Q101 compliance.

Supply support for DMN3030LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN3030LSS-13 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12V/24V automotive subsystems and industrial power conversion where low RDS(ON), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for DMN3030LSS-13 at 100°C ambient?

At TA = +100°C, the maximum continuous drain current is 4.5A, derived from linear derating of the 9.0A rating at +25°C using the 6.75A value at +70°C and thermal resistance data. This assumes mounting on FR-4 with 1-inch² copper per the datasheet Note 6.

Does DMN3030LSS-13 include an integrated body diode, and what is its forward voltage?

Yes, it features an inherent parasitic body diode with VF = 0.5–1.2V at IS = 2.1A and VGS = 0V. The diode is rated for continuous conduction and exhibits low reverse recovery charge (Qrr not specified, but Crss = 95pF indicates moderate recovery speed).

Can DMN3030LSS-13 be used in a high-side switch configuration with 12V supply?

Yes, when paired with a gate driver capable of providing VGS ≥ 10V referenced to the source (e.g., bootstrap or isolated driver), it supports high-side switching up to 12V. The ±25V VGSS rating ensures gate oxide integrity during transient overvoltage events.

Is the SO-8 package of DMN3030LSS-13 compatible with standard IPC-7351B land patterns?

Yes, the SO-8 outline matches IPC-7351B SOIC-8 (SOIC200-8) standards. Recommended pad dimensions are C = 1.27 × 0.802 mm, X1 = 4.612 mm, Y1 = 6.50 mm, and thermal pad clearance per Diodes' suggested layout in DS31261 Rev. 13-2 page 5.

DMN3030LSS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
741 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMN3030LSS-13 FAQ

1.How can I place an order for DMN3030LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3030LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3030LSS-13 reliable?

The price and inventory of DMN3030LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3030LSS-13 is usually 5 days.

3.What payment methods are accepted for DMN3030LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3030LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3030LSS-13?

DMN3030LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3030LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3030LSS-13?

For technical support, including DMN3030LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3030LSS-13 requirements.

6.How does Aetrix verify that DMN3030LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMN3030LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3030LSS-13 meets industry standards.

7.What is the process for return or replacement of DMN3030LSS-13?

All DMN3030LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3030LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3030LSS-13 part is unused and in its original packaging.

Return procedure for DMN3030LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3030LSS-13 Tags

  • DMN3030LSS-13
  • DMN3030LSS-13 PDF
  • DMN3030LSS-13 Datasheet
  • DMN3030LSS-13 Specifications
  • DMN3030LSS-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN3030LSS-13
  • Buy DMN3030LSS-13
  • DMN3030LSS-13 Price
  • DMN3030LSS-13 Distributor
  • DMN3030LSS-13 Supplier
  • DMN3030LSS-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER