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Diodes Incorporated DMN3031LSS-13
- Part No.:
- DMN3031LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN3031LSS-13.pdf
- Description:
- MOSFET N-CH 30V 9A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,345
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Product details
Overview
DMN3031LSS-13 from Diodes Incorporated is a single N-channel enhancement-mode MOSFET in SO-8 package, rated for 30 V VDSS, 9 A continuous drain current at 25°C, and 18.5 mΩ RDS(on) at VGS = 10 V. It delivers low gate threshold (1–2.1 V), fast switching (td(on) = 4.0 ns), and AEC-Q101 qualification for automotive power management circuits.
For engineers reviewing the DMN3031LSS-13 datasheet, DMN3031LSS-13 pinout, DMN3031LSS-13 application, or DMN3031LSS-13 equivalent, key selection criteria include verified RDS(on) at 4.5 V (31 mΩ), thermal resistance (RθJA = 50 °C/W), SO-8 terminal layout, and AEC-Q101 reliability validation - all critical for high-efficiency DC-DC converters and motor drive half-bridges.
Technical Context
This MOSFET operates as a low-side switch in synchronous buck regulators and load-switch applications, leveraging its 1.0–2.1 V gate threshold to ensure robust turn-on with standard 3.3 V or 5 V logic drivers. Its 741 pF input capacitance and 95 pF reverse transfer capacitance support clean gate drive integrity under high dV/dt conditions.
The device uses a planar silicon process optimized for low conduction loss and controlled body diode recovery (VSD = 0.5–1.2 V at IS = 2.1 A), enabling efficient freewheeling in inductive loads without external Schottky clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche; suitable for 24 V automotive rail and 12 V industrial systems. |
| RDS(on) @ VGS = 10 V | 18.5 mΩ - Confirmed conduction loss of ≤1.5 W at 9 A, enabling compact thermal design on 2 oz copper pads. |
| RDS(on) @ VGS = 4.5 V | 31 mΩ - Validated operation with 3.3 V microcontroller GPIOs; supports logic-level drive without level-shifting. |
| Qg @ VGS = 10 V | 16.7 nC - Total gate charge determines driver strength requirement; enables <100 ns full switching with 1 A peak driver. |
| RθJA | 50 °C/W - Measured junction-to-ambient thermal resistance on standard SO-8 PCB layout per JESD51-2. |
| AEC-Q101 Qualified | Yes - Validated for automotive temperature cycling, HTRB, and ESD per AEC-Q101 Rev D; not for new designs but supported in legacy programs. |
Pinout & Package
Package: SO-8 (Surface-Mount Small Outline, 8-lead), molded plastic with UL 94V-0 flammability rating and matte tin-plated copper lead frame. Moisture sensitivity level 1 (J-STD-020D).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source bias; 0.88 Ω typical gate resistance limits ringing. |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to power ground in low-side configurations. |
| 3 (D) | Drain | Main current output; internally paralleled across pins 3, 4, 6, 7, and 8 for reduced package inductance and thermal spreading. |
| 4 (D) | Drain | Redundant drain connection; electrically identical to pin 3; improves current sharing and heatsinking. |
| 5 (G) | Gate | Second gate terminal; connected internally to pin 1; reduces gate loop inductance in high-frequency layouts. |
| 6 (D) | Drain | Third drain terminal; part of multi-pin drain structure to lower RDS(on) and thermal impedance. |
| 7 (D) | Drain | Fourth drain terminal; enhances power handling and reduces localized heating under pulsed loads. |
| 8 (S) | Source | Second source terminal; mirrors pin 2; provides symmetric return path for high-current paths. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 31 mΩ - Enables direct interface with 3.3 V MCUs in battery-powered load switches without gate drivers. |
| Fast switching speed | td(on) = 4.0 ns, tf = 9.4 ns - Reduces switching losses in 500 kHz–1 MHz DC-DC converters. |
| Low gate threshold voltage | VGS(th) = 1.0–2.1 V - Ensures reliable turn-on even with degraded gate drive or elevated temperature drift. |
| AEC-Q101 qualification | Qualified per Rev D - Supports deployment in automotive body control modules and infotainment power rails. |
| Green RoHS-compliant construction | No purposefully added lead; UL 94V-0 molding compound - Meets EU Directive 2011/65/EU and automotive ELV requirements. |
Applications
| Automotive Body Control Module (BCM) | Industrial 24 V DC Load Switch |
|---|---|
Use Scenario: Controlling headlight, wiper, or seat actuator loads in 12–24 V vehicle electrical systems. IC Role / Device Role / Timing Role: Low-side power switch managing up to 9 A resistive/inductive loads with PWM dimming capability. Use Value: 31 mΩ RDS(on) at 4.5 V ensures full turn-on using BCM's 5 V logic outputs; AEC-Q101 compliance guarantees field reliability. | Use Scenario: Remote ON/OFF control of PLC I/O modules, solenoids, or indicator lamps in factory automation panels. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, supporting >100 k cycle life and silent operation. Use Value: 50 °C/W RθJA allows sustained 6.75 A operation at 70°C ambient without heatsink; SO-8 footprint simplifies board layout. |
| USB-C Power Delivery Sink Protection | Synchronous Buck Converter High-Side Switch (with external bootstrap) |
Use Scenario: Reverse-current and overcurrent protection in USB-C PD sink ports accepting up to 20 V input. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for bidirectional blocking and fast fault shutdown. Use Value: 1 μA IDSS at 30 V minimizes standby leakage; 124 pF Coss enables stable regulation during transient load steps. | Use Scenario: High-efficiency 12 V → 3.3 V conversion in embedded computing power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier paired with dedicated high-side driver IC (e.g., MP6540) in buck topology. Use Value: 7.6 nC Qg at 4.5 V reduces driver power loss; 0.7–1.2 V VSD supports controlled body diode conduction during dead-time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3030LSS-13 | RDS(on) = 17.5 mΩ @ 10 V (typ), 29 mΩ @ 4.5 V (typ); same SO-8 package and AEC-Q101 qualification. | Marginally lower conduction loss; identical pinout and thermal profile. | Select when <0.5 mΩ RDS(on) reduction justifies sourcing continuity check. |
| NTMFS4C06NT1G | RDS(on) = 15.5 mΩ @ 10 V, 26 mΩ @ 4.5 V; SO-8FL package with exposed drain pad for RθJA = 40 °C/W. | Superior thermal performance due to enhanced thermal pad; not AEC-Q101 qualified. | Prefer for non-automotive high-power density designs where thermal margin outweighs qualification needs. |
Compared with DMN3031LSS-13, DMN3030LSS-13 offers slightly better conduction efficiency with identical form factor and qualification, while NTMFS4C06NT1G trades automotive compliance for 20% lower thermal resistance via exposed-pad packaging - making it suitable only for industrial applications demanding higher power density.
Availability
DMN3031LSS-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V load switching, and USB-C power delivery protection requiring stable component supply and long-term BOM continuity.
Supply support for DMN3031LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
The DMN3031LSS belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for robustness in harsh-temperature automotive subsystems and industrial control environments where reliability under thermal stress and voltage transients is mandatory.
FAQ
Is DMN3031LSS-13 recommended for new designs?
No. Diodes Incorporated explicitly marks DMN3031LSS as "NOT RECOMMENDED FOR NEW DESIGN USE" in its datasheet (Rev. 4–3, December 2012). It remains available for legacy program support and second-sourcing, but newer alternatives like DMN3030LSS-13 or NTMFS4C06NT1G are preferred for design-in.
What is the maximum pulsed drain current rating?
The pulsed drain current (IDM) is rated at 40 A, tested under conditions of pulse width ≤10 μs and duty cycle ≤1%. This rating applies only for short-duration surge events such as motor startup or capacitor inrush, not continuous operation.
Does DMN3031LSS-13 have an integrated body diode?
Yes. As a standard silicon MOSFET, it includes an intrinsic parasitic body diode between source and drain. Its forward voltage (VSD) is specified as 0.5–1.2 V at IS = 2.1 A and VGS = 0 V, with temperature-dependent characteristics shown in Figure 9 of the datasheet.
How is thermal performance validated for this SO-8 MOSFET?
Thermal resistance RθJA = 50 °C/W is measured per JEDEC JESD51-2 on a standardized 2 oz copper pad layout. Transient thermal response data (Figure 10) confirms single-pulse capability up to 2.5 W dissipation, with derating applied above 25°C ambient per the thermal characteristics table.
DMN3031LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 741 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
DMN3031LSS-13 FAQ
1.How can I place an order for DMN3031LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3031LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3031LSS-13 reliable?
The price and inventory of DMN3031LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3031LSS-13 is usually 5 days.
3.What payment methods are accepted for DMN3031LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3031LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3031LSS-13?
DMN3031LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3031LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3031LSS-13?
For technical support, including DMN3031LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3031LSS-13 requirements.
6.How does Aetrix verify that DMN3031LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMN3031LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3031LSS-13 meets industry standards.
7.What is the process for return or replacement of DMN3031LSS-13?
All DMN3031LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3031LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3031LSS-13 part is unused and in its original packaging.
Return procedure for DMN3031LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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